JP2013503466A - レーザーミラー上に取り付けられた吸収体を備える半導体レーザー - Google Patents
レーザーミラー上に取り付けられた吸収体を備える半導体レーザー Download PDFInfo
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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Abstract
【選択図】 図1
Description
feedback:分布帰還)型レーザーダイオードは、上述の条件をすべて満たすものである。
light emitting diode:有機発光ダイオード)と呼ばれる発光素子に用いることも可能である。
Claims (22)
- a.少なくとも1つの半導体基板(10)と、
b.上記半導体基板(10)上に配置された少なくとも1つのアクティブ層(20)と、
c.上記アクティブ層(20)の一端部に配置され、上記アクティブ層(20)内で生成された放射の一部が出射する少なくとも1つのレーザーミラー(40)とを備え、
上記レーザーミラー(40)には、上記レーザーミラー(40)を通って出射する放射の光出力‐電流‐特性曲線の上昇を低減させることに適した吸収性材料層(50,60)が備えられている、半導体レーザー。 - a.少なくとも1つの半導体基板(10)と、
b.上記半導体基板(10)上に配置された少なくとも1つのアクティブ層(20)と、
c.上記アクティブ層(20)の一端部に配置され、上記アクティブ層(20)内で生成された放射の一部が出射する少なくとも1つのレーザーミラー(40)と、
d.上記半導体基板(10)上に配置された吸収体モジュール(200)とを備え、
上記吸収体モジュール(200)は、生成された上記放射の方向に、上記レーザーミラー(40)から間隔(210)を置いて配置されており、上記吸収体モジュール(200)の後方における、上記レーザーミラー(40)を通って出射する放射の光出力‐電流‐特性曲線の上昇を低減させることに適している、半導体レーザー。 - 上記吸収性材料層(50,60)、および/または、上記吸収体モジュール(200)は、上記光出力‐電流‐特性曲線の上昇を、係数10だけ、好ましくは係数1,000だけ、および最も好ましくは係数10,000だけ低減させる、請求項1または2に記載の半導体レーザー。
- 上記吸収性材料層(50)、および/または、上記吸収体モジュール(200)は、上記生成された放射の波長域において吸収する、1つまたは複数の半導体材料および/または半導体化合物、炭素または炭素化合物、および/または、1つまたは複数の塗料、若しくは、1つまたは複数のラッカーを含む、請求項1〜3のいずれか1項に記載の半導体レーザー。
- 上記レーザーミラー(40)と上記吸収性材料層(50,60)との間に、少なくとも1つの電気絶縁層(70)が備えられている、請求項1〜4のいずれか1項に記載の半導体レーザー。
- 上記吸収性材料層(60)は、1つまたは複数の金属、特にチタンを含む、請求項5に記載の半導体レーザー。
- 上記吸収体モジュール(200)は、1つまたは複数の金属、特にチタンを含む、請求項2に記載の半導体レーザー。
- 上記レーザーミラー(40)と、上記吸収性材料層(50,60)または上記吸収体モジュール(200)との間に、少なくとも1つの反射層(80)が備えられている、請求項1〜7のいずれか1項に記載の半導体レーザー。
- 上記反射層(80,90)の、発光波長域における反射係数は、≧30%、好ましくは≧50%、および最も好ましくは≧90%である、請求項8に記載の半導体レーザー。
- 上記反射層(80)は、少なくとも1つの金属酸化物、特に酸化アルミニウム、酸化チタン、および/または、酸化マグネシウムを含む、請求項8または9に記載の半導体レーザー。
- 上記反射層(80)は、少なくとも1つの半導体材料、例えばシリコン、半導体化合物、例えば二酸化シリコン、および/または、1つの半導体材料と1つの半導体化合物とから成る層構造を含む、請求項8または9に記載の半導体レーザー。
- 上記レーザーミラー(40)と上記反射層(80)との間に、少なくとも1つの電気絶縁層(70)が備えられている、請求項8〜11のいずれか1項に記載の半導体レーザー。
- 上記レーザーミラー(40)と上記電気絶縁層(70)との間に、少なくとも1つの反射層(80)が備えられている、請求項8〜11のいずれか1項に記載の半導体レーザー。
- 上記反射層(80)と上記吸収性材料層(50,60)との間に、少なくとも1つの電気絶縁層(100)が備えられている、請求項8〜13のいずれか1項に記載の半導体レーザー。
- 上記反射層(90)は、少なくとも1つの金属、特に金または銀を含む、請求項14に記載の半導体レーザー。
- 上記レーザーミラー(40)の後方に間隔(210)を置いて配置された上記吸収体モジュール(200)は、光線に垂直な面を有しており、上記レーザーミラー(40)を通って出射する光の強度の少なくとも99.9%が、上記光線に垂直な面に衝突する、請求項2に記載の半導体レーザー。
- 上記吸収体モジュール(200)は、上記レーザーミラー(40)側の少なくとも1つの側面に、吸収性材料層(50,60)を備えている、請求項2に記載の半導体レーザー。
- 上記吸収体モジュール(200)の表面全体に、吸収性材料層(50,60)が備えられている、請求項2に記載の半導体レーザー。
- 上記吸収体モジュール(200)は、エピタキシャル法によって、上記半導体基板(10)上に形成される、請求項2に記載の半導体レーザー。
- 上記吸収体モジュール(200)は、接着法またははんだ付けによって、上記半導体基板(10)上に固定される、請求項2に記載の半導体レーザー。
- 上記半導体基板(10)上に配置された吸収体モジュール(200)をさらに備える半導体レーザーであって、上記吸収体モジュール(200)は、上記生成された放射の方向に、上記レーザーミラー(40)から間隔(210)を置いて配置されており、上記吸収体モジュール(200)の後方における、上記レーザーミラー(40)を通って出射する放射の光出力‐電流‐特性曲線の上昇を低減させることに適している、請求項1に記載の半導体レーザー。
- 請求項1〜21のいずれか1項に記載の半導体レーザーを備える、ガス濃度を測定するためのセンサ装置。
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DE102009028909A DE102009028909A1 (de) | 2009-08-26 | 2009-08-26 | Halbleiterlaser mit auf einem Laserspiegel angebrachtem Absorber |
DE102009028909.7 | 2009-08-26 | ||
PCT/EP2010/061687 WO2011023551A1 (de) | 2009-08-26 | 2010-08-11 | Halbleiterlaser mit auf einem laserspiegel angebrachtem absorber |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014192249A (ja) * | 2013-03-26 | 2014-10-06 | Nippon Telegr & Teleph Corp <Ntt> | 多波長半導体レーザ光源 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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TW564471B (en) * | 2001-07-16 | 2003-12-01 | Semiconductor Energy Lab | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
JP5803167B2 (ja) * | 2011-03-14 | 2015-11-04 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子の製造方法 |
DE102011081417A1 (de) | 2011-08-23 | 2012-09-20 | Siemens Ag | Optoelektronisches Bauelement |
US11901692B2 (en) * | 2018-11-27 | 2024-02-13 | Skorpios Technologies, Inc. | Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device |
US11217963B1 (en) * | 2018-11-27 | 2022-01-04 | Skorpios Technologies, Inc. | Wafer level coatings for photonic die |
US11728619B2 (en) * | 2020-07-07 | 2023-08-15 | Marvell Asia Pte Ltd | Side mode suppression for extended c-band tunable laser |
DE102020212422A1 (de) | 2020-10-01 | 2022-04-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Laserdiodenvorrichtung und Datenbrillensystem |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01254841A (ja) * | 1988-04-05 | 1989-10-11 | Fujitsu Ltd | ガスセンサの信号処理方法 |
JPH02214182A (ja) * | 1989-02-14 | 1990-08-27 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH04207091A (ja) * | 1990-11-30 | 1992-07-29 | Toshiba Corp | 半導体レーザ装置 |
JPH0537072A (ja) * | 1991-07-30 | 1993-02-12 | Sharp Corp | 半導体レーザ素子 |
JPH0575214A (ja) * | 1991-09-12 | 1993-03-26 | Toshiba Corp | 半導体装置 |
JPH0745910A (ja) * | 1993-07-30 | 1995-02-14 | Ricoh Co Ltd | 半導体レーザー |
JP2001257413A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Electronic Engineering Corp | 半導体レーザ装置及びその製造方法 |
JP2009021548A (ja) * | 2007-06-13 | 2009-01-29 | Sharp Corp | 発光素子及び発光素子の製造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5543822A (en) | 1978-09-21 | 1980-03-27 | Fujitsu Ltd | Semiconductor light emission device |
US4503541A (en) | 1982-11-10 | 1985-03-05 | The United States Of America As Represented By The Secretary Of The Navy | Controlled-linewidth laser source |
US4684258A (en) * | 1985-07-31 | 1987-08-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for enhancing laser absorption sensitivity |
KR19990044214A (ko) * | 1995-08-29 | 1999-06-25 | 디어터 크리스트, 베르너 뵈켈 | 레이저 장치 |
JPH10125989A (ja) * | 1996-10-17 | 1998-05-15 | Furukawa Electric Co Ltd:The | 光集積素子 |
FR2753794A1 (fr) | 1996-12-24 | 1998-03-27 | Commissariat Energie Atomique | Systeme de mesure spectrophotometrique par diodes a cavite resonnante |
US6347107B1 (en) * | 1998-07-15 | 2002-02-12 | Eastman Kodak Company | System and method of improving intensity control of laser diodes using back facet photodiode |
JP3422364B2 (ja) | 1998-08-21 | 2003-06-30 | セイコーエプソン株式会社 | インクジェット式記録ヘッド及びインクジェット式記録装置 |
JP4035021B2 (ja) | 1999-02-17 | 2008-01-16 | 松下電器産業株式会社 | 半導体レーザ装置、光ディスク装置及び光集積化装置 |
DE19908426C2 (de) | 1999-02-26 | 2001-03-22 | Siemens Ag | Vertikalresonator-Laserdiode mit einer lichtabsorbierenden Schicht und Verfahren zu ihrer Herstellung |
JP2001133403A (ja) | 1999-11-02 | 2001-05-18 | Nippon Sanso Corp | 半導体レーザ多重反射吸収分光によるガス分析方法及び装置 |
JP2001154067A (ja) * | 1999-12-01 | 2001-06-08 | Nec Corp | 光導波路を使用した光送受信モジュール |
US7573928B1 (en) * | 2003-09-05 | 2009-08-11 | Santur Corporation | Semiconductor distributed feedback (DFB) laser array with integrated attenuator |
JP4253027B2 (ja) * | 2006-11-21 | 2009-04-08 | 古河電気工業株式会社 | 光モジュール |
US7940003B2 (en) | 2007-06-13 | 2011-05-10 | Sharp Kabushiki Kaisha | Light emitting device and method of fabricating a light emitting device |
DE102008012859B4 (de) * | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Filterstruktur |
-
2009
- 2009-08-26 DE DE102009028909A patent/DE102009028909A1/de not_active Ceased
-
2010
- 2010-08-11 US US13/391,449 patent/US8879599B2/en active Active
- 2010-08-11 PL PL10740685T patent/PL2471151T3/pl unknown
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- 2010-08-11 WO PCT/EP2010/061687 patent/WO2011023551A1/de active Application Filing
- 2010-08-11 EP EP10740685.2A patent/EP2471151B1/de active Active
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01254841A (ja) * | 1988-04-05 | 1989-10-11 | Fujitsu Ltd | ガスセンサの信号処理方法 |
JPH02214182A (ja) * | 1989-02-14 | 1990-08-27 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH04207091A (ja) * | 1990-11-30 | 1992-07-29 | Toshiba Corp | 半導体レーザ装置 |
JPH0537072A (ja) * | 1991-07-30 | 1993-02-12 | Sharp Corp | 半導体レーザ素子 |
JPH0575214A (ja) * | 1991-09-12 | 1993-03-26 | Toshiba Corp | 半導体装置 |
JPH0745910A (ja) * | 1993-07-30 | 1995-02-14 | Ricoh Co Ltd | 半導体レーザー |
JP2001257413A (ja) * | 2000-03-14 | 2001-09-21 | Toshiba Electronic Engineering Corp | 半導体レーザ装置及びその製造方法 |
JP2009021548A (ja) * | 2007-06-13 | 2009-01-29 | Sharp Corp | 発光素子及び発光素子の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014192249A (ja) * | 2013-03-26 | 2014-10-06 | Nippon Telegr & Teleph Corp <Ntt> | 多波長半導体レーザ光源 |
Also Published As
Publication number | Publication date |
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EP2471151A1 (de) | 2012-07-04 |
EP2471151B1 (de) | 2020-02-19 |
PL2471151T3 (pl) | 2020-07-27 |
LT2471151T (lt) | 2020-04-10 |
WO2011023551A1 (de) | 2011-03-03 |
JP5837493B2 (ja) | 2015-12-24 |
DE102009028909A1 (de) | 2011-03-17 |
US20120177075A1 (en) | 2012-07-12 |
US8879599B2 (en) | 2014-11-04 |
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