JP2011181599A - プラズマ成膜装置及び方法 - Google Patents

プラズマ成膜装置及び方法 Download PDF

Info

Publication number
JP2011181599A
JP2011181599A JP2010042554A JP2010042554A JP2011181599A JP 2011181599 A JP2011181599 A JP 2011181599A JP 2010042554 A JP2010042554 A JP 2010042554A JP 2010042554 A JP2010042554 A JP 2010042554A JP 2011181599 A JP2011181599 A JP 2011181599A
Authority
JP
Japan
Prior art keywords
substrate
film
plasma
borazine
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010042554A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011181599A5 (enExample
Inventor
Yuichi Kono
雄一 河野
Toshito Fujiwara
敏人 藤原
Akihiko Matsukura
明彦 松倉
Takuya Kamiyama
卓也 神山
Tetsuya Yamamoto
哲也 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Nippon Shokubai Co Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Nippon Shokubai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd, Nippon Shokubai Co Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2010042554A priority Critical patent/JP2011181599A/ja
Priority to PCT/JP2011/051689 priority patent/WO2011105163A1/ja
Priority to TW100105160A priority patent/TW201145387A/zh
Publication of JP2011181599A publication Critical patent/JP2011181599A/ja
Publication of JP2011181599A5 publication Critical patent/JP2011181599A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Formation Of Insulating Films (AREA)
JP2010042554A 2010-02-26 2010-02-26 プラズマ成膜装置及び方法 Pending JP2011181599A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010042554A JP2011181599A (ja) 2010-02-26 2010-02-26 プラズマ成膜装置及び方法
PCT/JP2011/051689 WO2011105163A1 (ja) 2010-02-26 2011-01-28 プラズマ成膜装置及び方法
TW100105160A TW201145387A (en) 2010-02-26 2011-02-16 Plasma film-forming apparatus and plasma film-forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010042554A JP2011181599A (ja) 2010-02-26 2010-02-26 プラズマ成膜装置及び方法

Publications (2)

Publication Number Publication Date
JP2011181599A true JP2011181599A (ja) 2011-09-15
JP2011181599A5 JP2011181599A5 (enExample) 2013-02-28

Family

ID=44506584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010042554A Pending JP2011181599A (ja) 2010-02-26 2010-02-26 プラズマ成膜装置及び方法

Country Status (3)

Country Link
JP (1) JP2011181599A (enExample)
TW (1) TW201145387A (enExample)
WO (1) WO2011105163A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056871A (ja) * 2012-09-11 2014-03-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP2014154630A (ja) * 2013-02-06 2014-08-25 Tokyo Electron Ltd 基板処理装置及び成膜方法
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP2006005147A (ja) * 2004-06-17 2006-01-05 Tokyo Electron Ltd 基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8709162B2 (en) * 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04271122A (ja) * 1991-02-27 1992-09-28 Fuji Electric Co Ltd プラズマ処理装置
JP2006005147A (ja) * 2004-06-17 2006-01-05 Tokyo Electron Ltd 基板処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056871A (ja) * 2012-09-11 2014-03-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9431240B2 (en) 2012-09-11 2016-08-30 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
JP2014154630A (ja) * 2013-02-06 2014-08-25 Tokyo Electron Ltd 基板処理装置及び成膜方法
JP7670876B1 (ja) 2024-01-15 2025-04-30 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法
JP2025110062A (ja) * 2024-01-15 2025-07-28 日本特殊陶業株式会社 半導体基板処理用基台、セラミックス基材、および製造方法

Also Published As

Publication number Publication date
WO2011105163A1 (ja) 2011-09-01
TW201145387A (en) 2011-12-16

Similar Documents

Publication Publication Date Title
US9018108B2 (en) Low shrinkage dielectric films
JP3595853B2 (ja) プラズマｃｖｄ成膜装置
JP6861710B2 (ja) 非対称なチャンバ環境における均一なウエハ温度の実現
TW200830942A (en) Contamination reducing liner for inductively coupled chamber
WO2008024566A2 (en) Overall defect reduction for pecvd films
WO2008002844A2 (en) Method for depositing an amorphous carbon film with improved density and step coverage
WO2020068139A1 (en) Asymmetric wafer bow compensation
KR102786425B1 (ko) 저-k 유전체 막들을 증착하기 위한 시스템들 및 방법들
TWI550128B (zh) 膜沉積裝置
JP5330747B2 (ja) 半導体装置用絶縁膜、半導体装置用絶縁膜の製造方法及び製造装置、半導体装置及びその製造方法
JP2011181599A (ja) プラズマ成膜装置及び方法
TWI831824B (zh) 非uv高硬度低介電常數膜沉積
JP5350424B2 (ja) 表面処理方法
KR20240057450A (ko) 정전 클램핑을 사용한 리모트 플라즈마 증착
WO2006043432A1 (ja) 膜の製造方法および当該方法で製造された膜を用いた半導体装置
KR20030051627A (ko) 플라즈마 처리 장치 및 방법
CN107408494B (zh) 缺陷平面化
TW202326853A (zh) 選擇性移除膜之方法、基板處理設備、反應器系統
US20220002863A1 (en) Plasma processing chamber
CN116324022A (zh) 用于沉积高密度和高拉伸应力的膜的系统和方法
KR102026206B1 (ko) 증착 장치
JP2025169908A (ja) 温度コントローラを有する基体処理装置
TW202526071A (zh) 用於形成具有減低介電常數及增加密度的低k介電材料之方法
TW202502652A (zh) 形成石墨烯膜的方法
JP2004031718A (ja) プラズマ成膜装置及びプラズマ成膜方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130110

A621 Written request for application examination

Effective date: 20130110

Free format text: JAPANESE INTERMEDIATE CODE: A621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140212

A02 Decision of refusal

Effective date: 20140715

Free format text: JAPANESE INTERMEDIATE CODE: A02