JP2011171740A - 発光素子パッケージ及び照明システム - Google Patents
発光素子パッケージ及び照明システム Download PDFInfo
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- JP2011171740A JP2011171740A JP2011033597A JP2011033597A JP2011171740A JP 2011171740 A JP2011171740 A JP 2011171740A JP 2011033597 A JP2011033597 A JP 2011033597A JP 2011033597 A JP2011033597 A JP 2011033597A JP 2011171740 A JP2011171740 A JP 2011171740A
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- light emitting
- emitting device
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- 238000005286 illumination Methods 0.000 title abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000007789 gas Substances 0.000 claims abstract description 19
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052786 argon Inorganic materials 0.000 claims abstract description 4
- 239000003566 sealing material Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000009877 rendering Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 122
- 239000004065 semiconductor Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 26
- 239000000463 material Substances 0.000 description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000011149 active material Substances 0.000 description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910019897 RuOx Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Planar Illumination Modules (AREA)
Abstract
【解決手段】本発明に従う発光素子パッケージは、サブマウントと、上記サブマウントの上の発光素子チップと、上記発光素子チップとの間に空間を含むようにして上記サブマウントの上に形成された波長フィルタと、上記波長フィルタの上の蛍光体層と、を含み、上記空間は、空気(air)、アルゴンガス(Ar gas)、窒素ガス(N2 gas)、真空のうち、少なくとも1つによって満たされる。
【選択図】図1
Description
[実施形態]
Claims (9)
- サブマウントと、
前記サブマウントの上の発光素子チップと、
前記発光素子チップとの間に空間を含むようにして前記サブマウントの上に形成された波長フィルタと、
前記波長フィルタの上の蛍光体層と、を含み、
前記空間は、空気(air)、アルゴンガス(Ar gas)、窒素ガス(N2 gas)、真空のうち、少なくとも1つによって満たされることを特徴とする、発光素子パッケージ。 - 前記蛍光体層は、均一な厚さを有する蛍光体層であることを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記波長フィルタは、互いに異なる屈折率を有する複数の誘電体層を含むことを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記波長フィルタは、
第1屈折率を有する第1誘電体層と、
前記第1屈折率と異なる第2屈折率を有し、前記第1誘電体層の上に形成された第2誘電体層と、
を含むことを特徴とする、請求項3に記載の発光素子パッケージ。 - 前記第1誘電体層はSiO2層を含み、前記第2誘電体層はTiO2層を含むことを特徴とする、請求項4に記載の発光素子パッケージ。
- 前記第1誘電体層と前記第2誘電体層の厚さは、λ/(4n×cosθ)(但し、λは光の波長、nは各誘電体層の屈折率、θは光の入射角)であることを特徴とする、請求項4に記載の発光素子パッケージ。
- 前記波長フィルタは、上面が均一な平面を含むことを特徴とする、請求項1に記載の発光素子パッケージ。
- 前記サブマウントと前記波長フィルタとの間にシーリング(Sealing)物質を含むことを特徴とする、請求項1に記載の発光素子パッケージ。
- 請求項1の発光素子パッケージを備える発光モジュール部を含むことを特徴とする、照明システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0014770 | 2010-02-18 | ||
KR1020100014770A KR20110094996A (ko) | 2010-02-18 | 2010-02-18 | 발광소자 패키지, 그 제조방법 및 조명시스템 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014086366A Division JP5963798B2 (ja) | 2010-02-18 | 2014-04-18 | 発光素子パッケージ及び照明システム |
Publications (1)
Publication Number | Publication Date |
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JP2011171740A true JP2011171740A (ja) | 2011-09-01 |
Family
ID=43902895
Family Applications (2)
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JP2011033597A Pending JP2011171740A (ja) | 2010-02-18 | 2011-02-18 | 発光素子パッケージ及び照明システム |
JP2014086366A Active JP5963798B2 (ja) | 2010-02-18 | 2014-04-18 | 発光素子パッケージ及び照明システム |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014086366A Active JP5963798B2 (ja) | 2010-02-18 | 2014-04-18 | 発光素子パッケージ及び照明システム |
Country Status (6)
Country | Link |
---|---|
US (1) | US8759841B2 (ja) |
EP (1) | EP2362452B1 (ja) |
JP (2) | JP2011171740A (ja) |
KR (1) | KR20110094996A (ja) |
CN (1) | CN102163684B (ja) |
TW (1) | TW201143165A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8995492B2 (en) | 2011-07-05 | 2015-03-31 | Nichia Corporation | Semiconductor laser element |
JP2016058378A (ja) * | 2014-09-05 | 2016-04-21 | 台達電子工業股▲ふん▼有限公司Delta Electronics,Inc. | 波長変換機器およびそれを用いた照明システム |
US9518718B2 (en) | 2012-12-28 | 2016-12-13 | Nichia Corporation | Bandpass filter for use in light emitting device and light emitting device using the same |
US10595367B2 (en) | 2017-10-23 | 2020-03-17 | Nichia Corporation | Light-emitting module and integrated light-emitting module |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101490233B1 (ko) * | 2010-04-15 | 2015-02-06 | 피에스아이 주식회사 | 장파장 투과필터를 포함하는 형광체 전환 단색 led |
US10688527B2 (en) | 2011-09-22 | 2020-06-23 | Delta Electronics, Inc. | Phosphor device comprising plural phosphor agents for converting waveband light into plural color lights with different wavelength peaks |
KR101324233B1 (ko) * | 2012-05-11 | 2013-11-01 | 연세대학교 산학협력단 | 발광 장치 및 발광 시스템 |
WO2014122626A1 (en) * | 2013-02-11 | 2014-08-14 | Koninklijke Philips N.V. | Led module with hermetic seal of wavelength conversion material |
TWI544179B (zh) * | 2014-09-05 | 2016-08-01 | 台達電子工業股份有限公司 | 光波長轉換裝置及其適用之光源系統 |
KR20160149363A (ko) | 2015-06-17 | 2016-12-28 | 삼성전자주식회사 | 반도체 발광소자 |
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DE102015112042B4 (de) * | 2015-07-23 | 2021-07-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Leuchtvorrichtung |
KR20170044791A (ko) * | 2015-10-15 | 2017-04-26 | 희성전자 주식회사 | 양자점, 고분자 수지, 양자점 시트 및 이를 포함하는 백라이트 유닛 |
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US11239394B2 (en) * | 2016-03-18 | 2022-02-01 | Lg Innotek Co., Ltd. | Semiconductor device and display device including the same |
US10431723B2 (en) * | 2017-01-31 | 2019-10-01 | Apple Inc. | Micro LED mixing cup |
CN108039399A (zh) * | 2017-12-04 | 2018-05-15 | 佛山市中山大学研究院 | 一种提高荧光利用率的led芯片 |
US10854794B2 (en) * | 2017-12-20 | 2020-12-01 | Lumileds Llc | Monolithic LED array structure |
CN109037405B (zh) * | 2018-07-16 | 2020-11-13 | 厦门三安光电有限公司 | 微发光装置及其显示器 |
US10910433B2 (en) | 2018-12-31 | 2021-02-02 | Lumileds Llc | Pixelated LED array with optical elements |
CN114630991A (zh) * | 2020-10-10 | 2022-06-14 | 瑞仪(广州)光电子器件有限公司 | 反射结构、背光模组及显示装置 |
WO2022198407A1 (zh) * | 2021-03-22 | 2022-09-29 | 京东方科技集团股份有限公司 | 显示基板及制造方法、显示装置、可穿戴设备和显示方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954977A (ja) * | 1995-08-15 | 1997-02-25 | Nec Corp | 光ヘッド装置 |
JPH0973654A (ja) * | 1995-09-07 | 1997-03-18 | Nec Corp | 光ヘッド装置 |
JPH10123319A (ja) * | 1996-10-23 | 1998-05-15 | Toyo Commun Equip Co Ltd | 波長可変光フィルタ |
JP2001051114A (ja) * | 1999-08-12 | 2001-02-23 | Nippon Telegr & Teleph Corp <Ntt> | 多層膜光波長フィルタ及びその作製方法 |
JP2003149435A (ja) * | 2001-11-13 | 2003-05-21 | Sun Tec Kk | 誘電体多層膜フィルタチップの製造方法 |
JP2004054224A (ja) * | 2002-05-27 | 2004-02-19 | Keio Gijuku | 導波路型光機能素子 |
JP2004177658A (ja) * | 2002-11-27 | 2004-06-24 | Sun Tec Kk | 誘電体多層膜バンドパスフィルタ |
JP2007094040A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | フレーム治具及びそれを用いた光学薄膜の形成方法 |
JP2008270707A (ja) * | 2007-03-28 | 2008-11-06 | Matsushita Electric Works Ltd | 発光装置 |
JP2008309843A (ja) * | 2007-06-12 | 2008-12-25 | Toyota Central R&D Labs Inc | 光学素子、光学素子の製造方法、多層反射膜、光導波路素子、回折格子、及び光記録媒体 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1441396B1 (de) * | 1996-06-26 | 2011-06-01 | OSRAM Opto Semiconductors GmbH | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6155699A (en) * | 1999-03-15 | 2000-12-05 | Agilent Technologies, Inc. | Efficient phosphor-conversion led structure |
US7649270B2 (en) * | 2004-08-06 | 2010-01-19 | A. L. M. T. Corp. | Collective substrate, semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode |
JP2006186022A (ja) * | 2004-12-27 | 2006-07-13 | Toyoda Gosei Co Ltd | 発光装置 |
JP4692059B2 (ja) * | 2005-04-25 | 2011-06-01 | パナソニック電工株式会社 | 発光装置の製造方法 |
JP2007116131A (ja) * | 2005-09-21 | 2007-05-10 | Sanyo Electric Co Ltd | Led発光装置 |
KR100726970B1 (ko) | 2005-12-23 | 2007-06-14 | 한국광기술원 | 다이크로익 필터를 이용한 발광 장치 |
US8044412B2 (en) * | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
TWI303872B (en) * | 2006-03-13 | 2008-12-01 | Ind Tech Res Inst | High power light emitting device assembly with esd preotection ability and the method of manufacturing the same |
KR100764391B1 (ko) | 2006-04-25 | 2007-10-05 | 삼성전기주식회사 | 발광 다이오드 모듈 |
US20080035942A1 (en) * | 2006-08-08 | 2008-02-14 | Lg Electronics Inc. | Light emitting device package and method for manufacturing the same |
EP2057693A1 (en) | 2006-08-29 | 2009-05-13 | Osram-Sylvania Inc. | Enhanced emission from phosphor-converted leds using interferometric filters |
JP2008166782A (ja) * | 2006-12-26 | 2008-07-17 | Seoul Semiconductor Co Ltd | 発光素子 |
KR100894169B1 (ko) | 2007-03-26 | 2009-04-22 | (주) 아모엘이디 | 형광체 필터 및 그의 제조방법과 그 형광체 필터를 이용한반도체 패키지 |
JP2010532104A (ja) * | 2007-06-27 | 2010-09-30 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 高効率白色発光ダイオードのための光学設計 |
KR100951843B1 (ko) | 2007-06-28 | 2010-04-12 | (주) 아모엘이디 | 필터 및 반도체 패키지 |
EP2015614B1 (en) * | 2007-07-12 | 2010-12-15 | Koito Manufacturing Co., Ltd. | Light emitting device |
DE102007050876A1 (de) * | 2007-09-26 | 2009-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
JP4613947B2 (ja) * | 2007-12-07 | 2011-01-19 | ソニー株式会社 | 照明装置、色変換素子及び表示装置 |
GB0801509D0 (en) * | 2008-01-28 | 2008-03-05 | Photonstar Led Ltd | Light emitting system with optically transparent thermally conductive element |
TW201115775A (en) * | 2009-10-19 | 2011-05-01 | Everlight Electronics Co Ltd | Light emitting diode package structure |
-
2010
- 2010-02-18 KR KR1020100014770A patent/KR20110094996A/ko not_active Application Discontinuation
-
2011
- 2011-01-21 TW TW100102276A patent/TW201143165A/zh unknown
- 2011-02-03 US US13/020,157 patent/US8759841B2/en active Active
- 2011-02-09 EP EP11153927.6A patent/EP2362452B1/en active Active
- 2011-02-18 JP JP2011033597A patent/JP2011171740A/ja active Pending
- 2011-02-18 CN CN201110041715.8A patent/CN102163684B/zh active Active
-
2014
- 2014-04-18 JP JP2014086366A patent/JP5963798B2/ja active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0954977A (ja) * | 1995-08-15 | 1997-02-25 | Nec Corp | 光ヘッド装置 |
JPH0973654A (ja) * | 1995-09-07 | 1997-03-18 | Nec Corp | 光ヘッド装置 |
JPH10123319A (ja) * | 1996-10-23 | 1998-05-15 | Toyo Commun Equip Co Ltd | 波長可変光フィルタ |
JP2001051114A (ja) * | 1999-08-12 | 2001-02-23 | Nippon Telegr & Teleph Corp <Ntt> | 多層膜光波長フィルタ及びその作製方法 |
JP2003149435A (ja) * | 2001-11-13 | 2003-05-21 | Sun Tec Kk | 誘電体多層膜フィルタチップの製造方法 |
JP2004054224A (ja) * | 2002-05-27 | 2004-02-19 | Keio Gijuku | 導波路型光機能素子 |
JP2004177658A (ja) * | 2002-11-27 | 2004-06-24 | Sun Tec Kk | 誘電体多層膜バンドパスフィルタ |
JP2007094040A (ja) * | 2005-09-29 | 2007-04-12 | Seiko Epson Corp | フレーム治具及びそれを用いた光学薄膜の形成方法 |
JP2008270707A (ja) * | 2007-03-28 | 2008-11-06 | Matsushita Electric Works Ltd | 発光装置 |
JP2008309843A (ja) * | 2007-06-12 | 2008-12-25 | Toyota Central R&D Labs Inc | 光学素子、光学素子の製造方法、多層反射膜、光導波路素子、回折格子、及び光記録媒体 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8995492B2 (en) | 2011-07-05 | 2015-03-31 | Nichia Corporation | Semiconductor laser element |
US9518718B2 (en) | 2012-12-28 | 2016-12-13 | Nichia Corporation | Bandpass filter for use in light emitting device and light emitting device using the same |
JP2016058378A (ja) * | 2014-09-05 | 2016-04-21 | 台達電子工業股▲ふん▼有限公司Delta Electronics,Inc. | 波長変換機器およびそれを用いた照明システム |
US9696013B2 (en) | 2014-09-05 | 2017-07-04 | Delta Electronics, Inc. | Illumination system multi-layered wavelength-converting device |
US10595367B2 (en) | 2017-10-23 | 2020-03-17 | Nichia Corporation | Light-emitting module and integrated light-emitting module |
US10993296B2 (en) | 2017-10-23 | 2021-04-27 | Nichia Corporation | Light-emitting module and integrated light-emitting module |
Also Published As
Publication number | Publication date |
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CN102163684A (zh) | 2011-08-24 |
EP2362452A3 (en) | 2014-09-17 |
JP2014168087A (ja) | 2014-09-11 |
CN102163684B (zh) | 2016-06-29 |
JP5963798B2 (ja) | 2016-08-03 |
TW201143165A (en) | 2011-12-01 |
US8759841B2 (en) | 2014-06-24 |
US20110198644A1 (en) | 2011-08-18 |
EP2362452B1 (en) | 2020-01-08 |
KR20110094996A (ko) | 2011-08-24 |
EP2362452A2 (en) | 2011-08-31 |
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