JP2011170328A - 表示装置の駆動方法、及び液晶表示装置 - Google Patents

表示装置の駆動方法、及び液晶表示装置 Download PDF

Info

Publication number
JP2011170328A
JP2011170328A JP2011004551A JP2011004551A JP2011170328A JP 2011170328 A JP2011170328 A JP 2011170328A JP 2011004551 A JP2011004551 A JP 2011004551A JP 2011004551 A JP2011004551 A JP 2011004551A JP 2011170328 A JP2011170328 A JP 2011170328A
Authority
JP
Japan
Prior art keywords
signal
liquid crystal
circuit
display device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011004551A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011170328A5 (enExample
Inventor
Masahiko Hayakawa
昌彦 早川
Kenichi Wakimoto
研一 脇本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011004551A priority Critical patent/JP2011170328A/ja
Publication of JP2011170328A publication Critical patent/JP2011170328A/ja
Publication of JP2011170328A5 publication Critical patent/JP2011170328A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • G09G3/3655—Details of drivers for counter electrodes, e.g. common electrodes for pixel capacitors or supplementary storage capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/041—Temperature compensation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/10—Special adaptations of display systems for operation with variable images
    • G09G2320/103—Detection of image changes, e.g. determination of an index representative of the image change
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2340/00—Aspects of display data processing
    • G09G2340/04—Changes in size, position or resolution of an image
    • G09G2340/0407—Resolution change, inclusive of the use of different resolutions for different screen areas
    • G09G2340/0435—Change or adaptation of the frame rate of the video stream

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Thin Film Transistor (AREA)
JP2011004551A 2010-01-20 2011-01-13 表示装置の駆動方法、及び液晶表示装置 Withdrawn JP2011170328A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011004551A JP2011170328A (ja) 2010-01-20 2011-01-13 表示装置の駆動方法、及び液晶表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010010419 2010-01-20
JP2010010419 2010-01-20
JP2011004551A JP2011170328A (ja) 2010-01-20 2011-01-13 表示装置の駆動方法、及び液晶表示装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012159234A Division JP5178941B2 (ja) 2010-01-20 2012-07-18 液晶表示装置
JP2015002030A Division JP5952435B2 (ja) 2010-01-20 2015-01-08 液晶表示装置

Publications (2)

Publication Number Publication Date
JP2011170328A true JP2011170328A (ja) 2011-09-01
JP2011170328A5 JP2011170328A5 (enExample) 2014-02-20

Family

ID=44277297

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011004551A Withdrawn JP2011170328A (ja) 2010-01-20 2011-01-13 表示装置の駆動方法、及び液晶表示装置
JP2012159234A Expired - Fee Related JP5178941B2 (ja) 2010-01-20 2012-07-18 液晶表示装置
JP2015002030A Active JP5952435B2 (ja) 2010-01-20 2015-01-08 液晶表示装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012159234A Expired - Fee Related JP5178941B2 (ja) 2010-01-20 2012-07-18 液晶表示装置
JP2015002030A Active JP5952435B2 (ja) 2010-01-20 2015-01-08 液晶表示装置

Country Status (5)

Country Link
US (1) US8817009B2 (enExample)
JP (3) JP2011170328A (enExample)
KR (1) KR101750126B1 (enExample)
TW (1) TWI536347B (enExample)
WO (1) WO2011089832A1 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013110399A (ja) * 2011-10-27 2013-06-06 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013229371A (ja) * 2012-04-24 2013-11-07 Japan Display Inc 薄膜トランジスタ及びそれを用いた表示装置
KR20140014009A (ko) * 2012-07-27 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
WO2014084153A1 (en) * 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2014115641A (ja) * 2012-11-15 2014-06-26 Semiconductor Energy Lab Co Ltd 情報処理装置の駆動方法、プログラム、及び情報処理装置
JP2015503126A (ja) * 2011-12-14 2015-01-29 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 静止画像電力管理
JP2015075723A (ja) * 2013-10-11 2015-04-20 株式会社ジャパンディスプレイ 液晶表示装置
WO2022190637A1 (ja) * 2021-03-12 2022-09-15 株式会社ジャパンディスプレイ 液晶表示装置

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
WO2006063448A1 (en) 2004-12-15 2006-06-22 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
JP5355080B2 (ja) 2005-06-08 2013-11-27 イグニス・イノベイション・インコーポレーテッド 発光デバイス・ディスプレイを駆動するための方法およびシステム
US8477121B2 (en) 2006-04-19 2013-07-02 Ignis Innovation, Inc. Stable driving scheme for active matrix displays
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US20140313111A1 (en) 2010-02-04 2014-10-23 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
EP3547301A1 (en) 2011-05-27 2019-10-02 Ignis Innovation Inc. Systems and methods for aging compensation in amoled displays
JP5367883B2 (ja) * 2011-08-11 2013-12-11 シャープ株式会社 照明装置及びそれを備えた表示装置
US8730229B2 (en) * 2011-09-28 2014-05-20 Apple Inc. Devices and methods for zero-bias display turn-off using VCOM switch
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
CN103597533B (zh) * 2011-12-21 2017-08-04 大日本印刷株式会社 显示装置用前面保护板以及显示装置
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
JP5982948B2 (ja) * 2012-03-29 2016-08-31 セイコーエプソン株式会社 投射型表示装置、表示システム及び表示方法
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US9244572B2 (en) 2012-05-04 2016-01-26 Blackberry Limited Electronic device including touch-sensitive display and method of detecting touches
US9367120B2 (en) 2012-05-04 2016-06-14 Blackberry Limited Electronic device and method of detecting touches on a touch-sensitive display
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
KR101405164B1 (ko) * 2012-06-29 2014-06-10 인텔렉추얼디스커버리 주식회사 터치 디스플레이 장치
KR102082794B1 (ko) 2012-06-29 2020-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법, 및 표시 장치
JP2014029814A (ja) * 2012-07-31 2014-02-13 Sony Corp 表示装置および電子機器
US20140111558A1 (en) * 2012-10-23 2014-04-24 Semiconductor Energy Laboratory Co., Ltd. Display device and program
KR20150085035A (ko) 2012-11-15 2015-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치
WO2014080828A1 (ja) 2012-11-22 2014-05-30 シャープ株式会社 表示装置および電子機器
CN103971658B (zh) * 2013-02-04 2016-08-31 联咏科技股份有限公司 显示驱动装置及其显示驱动方法
EP2779147B1 (en) 2013-03-14 2016-03-02 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for AMOLED displays
US20140368488A1 (en) * 2013-06-14 2014-12-18 Semiconductor Energy Laboratory Co., Ltd. Information processing system and driving method thereof
US9818763B2 (en) * 2013-07-12 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing display device
CN107452314B (zh) * 2013-08-12 2021-08-24 伊格尼斯创新公司 用于要被显示器显示的图像的补偿图像数据的方法和装置
JP2015065424A (ja) * 2013-08-27 2015-04-09 株式会社半導体エネルギー研究所 酸化物膜の形成方法、半導体装置の作製方法
TWI507948B (zh) * 2013-08-28 2015-11-11 Au Optronics Corp 具有觸控功能之基板以及採用此基板之顯示器
US9436324B2 (en) 2013-11-04 2016-09-06 Blackberry Limited Electronic device including touch-sensitive display and method of detecting touches
KR102135877B1 (ko) 2013-11-22 2020-08-27 삼성디스플레이 주식회사 표시 패널의 구동 방법 및 이를 수행하기 위한 표시 장치
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
DE112014006046T5 (de) * 2013-12-27 2016-09-15 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung
WO2015136571A1 (ja) 2014-03-11 2015-09-17 パナソニック液晶ディスプレイ株式会社 表示装置及びその駆動方法
US10192479B2 (en) 2014-04-08 2019-01-29 Ignis Innovation Inc. Display system using system level resources to calculate compensation parameters for a display module in a portable device
CN104078016A (zh) * 2014-06-19 2014-10-01 京东方科技集团股份有限公司 时序控制方法、时序控制器及显示装置
KR101709087B1 (ko) * 2014-08-01 2017-02-23 삼성디스플레이 주식회사 타이밍 제어부, 이를 포함하는 표시 장치 및 이의 구동 방법
TW201614626A (en) 2014-09-05 2016-04-16 Semiconductor Energy Lab Display device and electronic device
US10706790B2 (en) 2014-12-01 2020-07-07 Semiconductor Energy Laboratory Co., Ltd. Display device, display module including the display device, and electronic device including the display device or the display module
CA2879462A1 (en) 2015-01-23 2016-07-23 Ignis Innovation Inc. Compensation for color variation in emissive devices
CA2889870A1 (en) 2015-05-04 2016-11-04 Ignis Innovation Inc. Optical feedback system
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
CN105677109B (zh) * 2016-01-12 2018-06-05 京东方科技集团股份有限公司 触控扫描电路、其驱动方法、触控驱动电路及触摸显示屏
KR102607397B1 (ko) * 2016-12-06 2023-11-28 삼성디스플레이 주식회사 표시 장치의 전원 제어 회로
US10867577B2 (en) * 2016-12-23 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Display device including data conversion circuit
CN107464517A (zh) * 2017-08-17 2017-12-12 上海天马有机发光显示技术有限公司 显示面板的驱动方法、驱动装置、显示面板及显示装置
KR102464997B1 (ko) * 2018-05-21 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 이를 포함하는 전자 기기
US10957233B1 (en) * 2019-12-19 2021-03-23 Novatek Microelectronics Corp. Control method for display panel
CN114078407A (zh) * 2020-08-11 2022-02-22 上海和辉光电股份有限公司 显示面板的驱动方法及装置
CN113380193A (zh) * 2021-06-23 2021-09-10 合肥维信诺科技有限公司 驱动方法、像素驱动电路及显示装置
CN116704929A (zh) * 2022-03-04 2023-09-05 群创光电股份有限公司 电子装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001312253A (ja) * 2000-04-28 2001-11-09 Sharp Corp 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器
JP2002278523A (ja) * 2001-01-12 2002-09-27 Sharp Corp 表示装置の駆動方法および表示装置
JP2004078124A (ja) * 2002-08-22 2004-03-11 Sharp Corp 表示装置およびその駆動方法
JP2007142196A (ja) * 2005-11-18 2007-06-07 Idemitsu Kosan Co Ltd 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
JP2007522498A (ja) * 2004-01-29 2007-08-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ アクティブマトリックスディスプレイ装置

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3118682B2 (ja) * 1992-12-25 2000-12-18 キヤノン株式会社 液晶表示装置
JP3286503B2 (ja) 1994-09-28 2002-05-27 キヤノン株式会社 液晶素子の駆動法、及び該駆動法が用いられる液晶装置
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3096640B2 (ja) * 1995-08-04 2000-10-10 三洋電機株式会社 半導体装置及び表示装置
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000132135A (ja) 1998-10-23 2000-05-12 Sharp Corp 表示装置並びに表示装置の駆動方法及び製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3556150B2 (ja) * 1999-06-15 2004-08-18 シャープ株式会社 液晶表示方法および液晶表示装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
US7321353B2 (en) * 2000-04-28 2008-01-22 Sharp Kabushiki Kaisha Display device method of driving same and electronic device mounting same
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP2002162938A (ja) * 2000-11-22 2002-06-07 Toshiba Corp 液晶表示装置
JP2002207462A (ja) 2001-01-11 2002-07-26 Toshiba Corp 液晶表示素子の駆動方法
US20030058543A1 (en) * 2001-02-21 2003-03-27 Sheedy James B. Optically corrective lenses for a head-mounted computer display
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2002297110A (ja) * 2001-03-30 2002-10-11 Sanyo Electric Co Ltd アクティブマトリクス型液晶表示装置の駆動方法
JP3755585B2 (ja) * 2001-05-11 2006-03-15 セイコーエプソン株式会社 表示コントローラ、表示ユニット及び電子機器
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
TW574529B (en) * 2001-09-28 2004-02-01 Tokyo Shibaura Electric Co Organic electro-luminescence display device
JP3899886B2 (ja) * 2001-10-10 2007-03-28 株式会社日立製作所 画像表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4014895B2 (ja) * 2001-11-28 2007-11-28 東芝松下ディスプレイテクノロジー株式会社 表示装置およびその駆動方法
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) * 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP3925435B2 (ja) * 2003-03-05 2007-06-06 カシオ計算機株式会社 発光駆動回路及び表示装置並びにその駆動制御方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
US7283105B2 (en) * 2003-04-24 2007-10-16 Displaytech, Inc. Microdisplay and interface on single chip
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
JP4807938B2 (ja) * 2004-05-14 2011-11-02 ルネサスエレクトロニクス株式会社 コントローラドライバ及び表示装置
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
CN100485762C (zh) * 2004-07-30 2009-05-06 株式会社半导体能源研究所 显示装置、显示装置的驱动方法及电子设备
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
EP2453480A2 (en) * 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
EP1815530B1 (en) * 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
JP4462036B2 (ja) * 2005-01-06 2010-05-12 株式会社デンソー 液晶表示装置
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (zh) * 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI412138B (zh) * 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP5220268B2 (ja) * 2005-05-11 2013-06-26 株式会社ジャパンディスプレイイースト 表示装置
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101667544B (zh) * 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
JP2007206651A (ja) * 2006-02-06 2007-08-16 Toshiba Corp 画像表示装置及びその方法
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2007304234A (ja) 2006-05-10 2007-11-22 Epson Imaging Devices Corp 液晶装置用駆動回路及び駆動方法並びに液晶装置及び電子機器
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP2008033066A (ja) 2006-07-28 2008-02-14 Sony Corp 表示動作制御装置、表示装置、電子機器、表示動作制御方法及びコンピュータプログラム
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US20080122769A1 (en) * 2006-11-29 2008-05-29 Mitsubishi Electric Corporation Liquid crystal display device
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
JP4989309B2 (ja) * 2007-05-18 2012-08-01 株式会社半導体エネルギー研究所 液晶表示装置
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP2009075500A (ja) 2007-09-25 2009-04-09 Seiko Epson Corp 液晶装置及び電子機器
TW200949822A (en) * 2007-11-26 2009-12-01 Tpo Displays Corp Display system and method for reducing power consumption of same
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP2009168927A (ja) * 2008-01-11 2009-07-30 Hitachi Displays Ltd 有機ｅｌ表示装置
TWI467761B (zh) * 2008-01-17 2015-01-01 Idemitsu Kosan Co Field effect transistor, semiconductor device and manufacturing method thereof
JP2009300722A (ja) 2008-06-13 2009-12-24 Seiko Epson Corp 液晶表示装置の駆動方法、液晶表示装置、および電子機器
WO2009157535A1 (ja) * 2008-06-27 2009-12-30 出光興産株式会社 ＩｎＧａＯ3（ＺｎＯ）結晶相からなる酸化物半導体用スパッタリングターゲット及びその製造方法
US8578192B2 (en) * 2008-06-30 2013-11-05 Intel Corporation Power efficient high frequency display with motion blur mitigation
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
CN110824800B (zh) * 2009-10-16 2022-07-26 株式会社半导体能源研究所 显示设备
KR20220116369A (ko) * 2009-11-13 2022-08-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001312253A (ja) * 2000-04-28 2001-11-09 Sharp Corp 表示装置の駆動方法およびそれを用いた表示装置ならびに携帯機器
JP2002278523A (ja) * 2001-01-12 2002-09-27 Sharp Corp 表示装置の駆動方法および表示装置
JP2004078124A (ja) * 2002-08-22 2004-03-11 Sharp Corp 表示装置およびその駆動方法
JP2007522498A (ja) * 2004-01-29 2007-08-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ アクティブマトリックスディスプレイ装置
JP2007142196A (ja) * 2005-11-18 2007-06-07 Idemitsu Kosan Co Ltd 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013110399A (ja) * 2011-10-27 2013-06-06 Semiconductor Energy Lab Co Ltd 半導体装置
US10082860B2 (en) 2011-12-14 2018-09-25 Qualcomm Incorporated Static image power management
JP2015503126A (ja) * 2011-12-14 2015-01-29 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 静止画像電力管理
JP2013229371A (ja) * 2012-04-24 2013-11-07 Japan Display Inc 薄膜トランジスタ及びそれを用いた表示装置
JP2017134427A (ja) * 2012-07-27 2017-08-03 株式会社半導体エネルギー研究所 半導体装置
KR20140014009A (ko) * 2012-07-27 2014-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR102094555B1 (ko) 2012-07-27 2020-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
JP2018087992A (ja) * 2012-07-27 2018-06-07 株式会社半導体エネルギー研究所 半導体装置
JP2014115641A (ja) * 2012-11-15 2014-06-26 Semiconductor Energy Lab Co Ltd 情報処理装置の駆動方法、プログラム、及び情報処理装置
US10347212B2 (en) 2012-11-15 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Method for driving information processing device, program, and information processing device
JP2021089439A (ja) * 2012-11-15 2021-06-10 株式会社半導体エネルギー研究所 情報処理装置及びプログラム
KR20150088825A (ko) * 2012-11-28 2015-08-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9805676B2 (en) 2012-11-28 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2014130340A (ja) * 2012-11-28 2014-07-10 Semiconductor Energy Lab Co Ltd 表示装置
WO2014084153A1 (en) * 2012-11-28 2014-06-05 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102148549B1 (ko) * 2012-11-28 2020-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US9842555B2 (en) 2013-10-11 2017-12-12 Japan Display Inc. Liquid crystal display device
JP2015075723A (ja) * 2013-10-11 2015-04-20 株式会社ジャパンディスプレイ 液晶表示装置
WO2022190637A1 (ja) * 2021-03-12 2022-09-15 株式会社ジャパンディスプレイ 液晶表示装置

Also Published As

Publication number Publication date
TW201137838A (en) 2011-11-01
JP2015129940A (ja) 2015-07-16
JP5178941B2 (ja) 2013-04-10
WO2011089832A1 (en) 2011-07-28
KR20120115521A (ko) 2012-10-18
TWI536347B (zh) 2016-06-01
US8817009B2 (en) 2014-08-26
JP5952435B2 (ja) 2016-07-13
KR101750126B1 (ko) 2017-06-22
US20110175895A1 (en) 2011-07-21
JP2012230413A (ja) 2012-11-22

Similar Documents

Publication Publication Date Title
JP5952435B2 (ja) 液晶表示装置
JP7054409B2 (ja) 液晶表示装置
US8786588B2 (en) Display device and driving method thereof
JP5883969B2 (ja) 表示装置
JP6100880B2 (ja) 液晶表示装置の作製方法
JP6979480B2 (ja) 液晶表示装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140930

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141015

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141216

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150108

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150331

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20150414