JP2011140421A5 - - Google Patents

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Publication number
JP2011140421A5
JP2011140421A5 JP2010002449A JP2010002449A JP2011140421A5 JP 2011140421 A5 JP2011140421 A5 JP 2011140421A5 JP 2010002449 A JP2010002449 A JP 2010002449A JP 2010002449 A JP2010002449 A JP 2010002449A JP 2011140421 A5 JP2011140421 A5 JP 2011140421A5
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JP
Japan
Prior art keywords
heater
single crystal
manufacturing apparatus
crystal manufacturing
cylindrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2010002449A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011140421A (ja
JP5293615B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010002449A external-priority patent/JP5293615B2/ja
Priority to JP2010002449A priority Critical patent/JP5293615B2/ja
Priority to DE112010005100.3T priority patent/DE112010005100B4/de
Priority to PCT/JP2010/007044 priority patent/WO2011083529A1/ja
Priority to CN201080053719.1A priority patent/CN102630256B/zh
Priority to US13/502,424 priority patent/US9187844B2/en
Priority to KR1020127017185A priority patent/KR101685478B1/ko
Publication of JP2011140421A publication Critical patent/JP2011140421A/ja
Publication of JP2011140421A5 publication Critical patent/JP2011140421A5/ja
Publication of JP5293615B2 publication Critical patent/JP5293615B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010002449A 2010-01-08 2010-01-08 単結晶製造装置 Active JP5293615B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2010002449A JP5293615B2 (ja) 2010-01-08 2010-01-08 単結晶製造装置
US13/502,424 US9187844B2 (en) 2010-01-08 2010-12-03 Single crystal manufacturing apparatus
PCT/JP2010/007044 WO2011083529A1 (ja) 2010-01-08 2010-12-03 単結晶製造装置
CN201080053719.1A CN102630256B (zh) 2010-01-08 2010-12-03 单晶制造装置
DE112010005100.3T DE112010005100B4 (de) 2010-01-08 2010-12-03 Einkristall-Herstellungsvorrichtung
KR1020127017185A KR101685478B1 (ko) 2010-01-08 2010-12-03 단결정 제조 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010002449A JP5293615B2 (ja) 2010-01-08 2010-01-08 単結晶製造装置

Publications (3)

Publication Number Publication Date
JP2011140421A JP2011140421A (ja) 2011-07-21
JP2011140421A5 true JP2011140421A5 (enExample) 2012-02-23
JP5293615B2 JP5293615B2 (ja) 2013-09-18

Family

ID=44305276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010002449A Active JP5293615B2 (ja) 2010-01-08 2010-01-08 単結晶製造装置

Country Status (6)

Country Link
US (1) US9187844B2 (enExample)
JP (1) JP5293615B2 (enExample)
KR (1) KR101685478B1 (enExample)
CN (1) CN102630256B (enExample)
DE (1) DE112010005100B4 (enExample)
WO (1) WO2011083529A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
KR101658284B1 (ko) * 2014-08-05 2016-09-20 주식회사 엘지실트론 잉곳성장장치
KR102017080B1 (ko) * 2017-12-05 2019-09-02 웅진에너지 주식회사 잉곳 성장장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2630461B1 (fr) 1988-04-20 1990-08-31 Inst Textile De France Procede et dispositif d'alimentation automatique d'une machine a coudre
JP3402041B2 (ja) * 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
JPH09263491A (ja) 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JP3482979B2 (ja) 1996-04-09 2004-01-06 三菱住友シリコン株式会社 単結晶引上装置におけるヒーター電極溶損防止装置
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JP3428624B2 (ja) * 1998-06-12 2003-07-22 三菱住友シリコン株式会社 シリコン単結晶の引上げ方法
JP2002137997A (ja) * 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶引き上げ装置
JP2009274925A (ja) * 2008-05-16 2009-11-26 Sumco Corp 単結晶引上げ装置およびこれを用いた単結晶の引上げ方法
CN101581542B (zh) 2009-06-16 2012-06-13 重庆大全新能源有限公司 多晶硅还原炉高压启动绝缘电极

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