JP2014522371A5 - - Google Patents

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Publication number
JP2014522371A5
JP2014522371A5 JP2014514457A JP2014514457A JP2014522371A5 JP 2014522371 A5 JP2014522371 A5 JP 2014522371A5 JP 2014514457 A JP2014514457 A JP 2014514457A JP 2014514457 A JP2014514457 A JP 2014514457A JP 2014522371 A5 JP2014522371 A5 JP 2014522371A5
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JP
Japan
Prior art keywords
heating element
crucible
crystal growth
growth apparatus
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014514457A
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English (en)
Japanese (ja)
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JP6013467B2 (ja
JP2014522371A (ja
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Publication date
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Priority claimed from PCT/US2012/035970 external-priority patent/WO2012170124A2/en
Publication of JP2014522371A publication Critical patent/JP2014522371A/ja
Publication of JP2014522371A5 publication Critical patent/JP2014522371A5/ja
Application granted granted Critical
Publication of JP6013467B2 publication Critical patent/JP6013467B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014514457A 2011-06-06 2012-05-01 結晶成長装置用の加熱部品 Expired - Fee Related JP6013467B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161493804P 2011-06-06 2011-06-06
US61/493,804 2011-06-06
PCT/US2012/035970 WO2012170124A2 (en) 2011-06-06 2012-05-01 Heater assembly for crystal growth apparatus

Publications (3)

Publication Number Publication Date
JP2014522371A JP2014522371A (ja) 2014-09-04
JP2014522371A5 true JP2014522371A5 (enExample) 2015-05-21
JP6013467B2 JP6013467B2 (ja) 2016-10-25

Family

ID=47292263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014514457A Expired - Fee Related JP6013467B2 (ja) 2011-06-06 2012-05-01 結晶成長装置用の加熱部品

Country Status (6)

Country Link
US (1) US9303331B2 (enExample)
JP (1) JP6013467B2 (enExample)
KR (1) KR101909439B1 (enExample)
CN (1) CN103703170B (enExample)
TW (1) TWI593839B (enExample)
WO (1) WO2012170124A2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101070608B (zh) * 2006-12-29 2010-06-23 嘉兴学院 旋转多坩埚下降法晶体生长系统
KR101263082B1 (ko) * 2010-11-15 2013-05-09 주식회사 엘지실트론 사파이어 잉곳 성장장치
CN103374758B (zh) * 2012-04-25 2016-03-02 志圣科技（广州）有限公司 晶体生长加热系统
KR20160000956U (ko) * 2013-07-15 2016-03-23 그라프텍 인터내셔널 홀딩스 인코포레이티드 실리콘 결정 생산 장치
CN105379415A (zh) * 2013-07-15 2016-03-02 莫门蒂夫性能材料股份有限公司 带涂层的石墨加热器构造
CN103741212A (zh) * 2013-12-19 2014-04-23 镇江环太硅科技有限公司 长晶炉及长晶炉热场的控制方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN104880069B (zh) * 2015-05-27 2016-10-26 海南大学 一种防热散失烧结炉
CN104962864B (zh) * 2015-07-23 2017-11-10 京东方科技集团股份有限公司 坩埚装置和蒸镀设备
KR101639627B1 (ko) * 2015-09-07 2016-07-14 에스엠엔티 주식회사 도가니 지지체를 이용한 사파이어 단결정 성장장치 및 이를 이용한 사파이어 단결정 성장방법
US10237921B2 (en) 2016-03-18 2019-03-19 Momentive Performance Materials Inc. Cylindrical heater
CN118380374A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
US10724796B2 (en) 2018-05-24 2020-07-28 Silfex, Inc Furnace for casting near-net shape (NNS) silicon
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
CN112279260B (zh) * 2020-10-30 2024-08-16 江苏先导微电子科技有限公司 一种高纯硼晶体和高纯硼粉的制备装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2599482B1 (fr) * 1986-06-03 1988-07-29 Commissariat Energie Atomique Four de fusion a induction haute frequence
JPH02116696A (ja) * 1988-10-19 1990-05-01 Gos N I I Proekt Inst Redkometallicheskoj Prom 石英るつぼを強化するためのシェル
JP2987799B2 (ja) * 1996-03-01 1999-12-06 住友金属工業株式会社 単結晶引上げ装置
JP2956575B2 (ja) * 1996-03-01 1999-10-04 住友金属工業株式会社 単結晶育成用抵抗発熱体
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
US6652649B1 (en) * 1999-06-29 2003-11-25 Act Optics & Engineering, Inc. Supplemental heating unit for crystal growth furnace
JP3775776B2 (ja) * 1999-09-20 2006-05-17 ユニオンマテリアル株式会社 単結晶の製造方法
US6285011B1 (en) * 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
JP3861548B2 (ja) * 2000-02-15 2006-12-20 株式会社Ｓｕｍｃｏ カーボンヒータ
WO2002027076A1 (fr) * 2000-09-26 2002-04-04 Shin-Etsu Handotai Co.,Ltd. Appareil et procede de production d'un mono-cristal semi-conducteur
JP2005053722A (ja) * 2003-08-01 2005-03-03 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶の製造方法
US20050061804A1 (en) * 2003-09-22 2005-03-24 Norman Golm Induction flux concentrator utilized for forming heat exchangers
CN2848884Y (zh) * 2005-12-21 2006-12-20 北京有色金属研究总院 一种热场中心轴线对称的装置
DE102006017621B4 (de) * 2006-04-12 2008-12-24 Schott Ag Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
TW200932963A (en) * 2008-01-29 2009-08-01 Green Energy Technology Inc Crystal growing furnace with heating improvement structure
CN101498038B (zh) * 2008-01-31 2011-11-02 绿能科技股份有限公司 具有加热改良构造的长晶炉
TW200949027A (en) * 2008-03-19 2009-12-01 Gt Solar Inc System and method for arranging heating element in crystal growth apparatus
JP5167960B2 (ja) * 2008-06-04 2013-03-21 株式会社Ｓｕｍｃｏ シリコン単結晶の育成装置
TW201012978A (en) * 2008-08-27 2010-04-01 Bp Corp North America Inc Apparatus and method of use for a casting system with independent melting and solidification

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