WO2002027076A1 - Appareil et procede de production d'un mono-cristal semi-conducteur - Google Patents

Appareil et procede de production d'un mono-cristal semi-conducteur Download PDF

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Publication number
WO2002027076A1
WO2002027076A1 PCT/JP2001/008328 JP0108328W WO0227076A1 WO 2002027076 A1 WO2002027076 A1 WO 2002027076A1 JP 0108328 W JP0108328 W JP 0108328W WO 0227076 A1 WO0227076 A1 WO 0227076A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
heater
semiconductor single
current path
melt
Prior art date
Application number
PCT/JP2001/008328
Other languages
English (en)
Japanese (ja)
Inventor
Shinobu Takeyasu
Kouji Kanno
Original Assignee
Shin-Etsu Handotai Co.,Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co.,Ltd. filed Critical Shin-Etsu Handotai Co.,Ltd.
Priority to JP2002530835A priority Critical patent/JP3979291B2/ja
Publication of WO2002027076A1 publication Critical patent/WO2002027076A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Definitions

  • a polycrystalline silicon as a raw material is first placed in a crucible composed of graphite on the outside and quartz on the inside provided in the growth furnace of the manufacturing equipment.
  • an inert gas such as argon (hereinafter referred to as Ar)
  • the graphite heating heater placed around the outside of the crucible containing the raw material is used for heating. Heat to a high temperature of 20 ° C or higher to melt the raw material.
  • a heater support member is provided above the electrode protecting member 30 to form a path for supplying a current by standing a heater 16 inside the growing furnace 12.
  • the heater support member 32 is connected to the heater 16 via a heater electrode 34 provided at the lower end of the heater 16.
  • the upper growth furnace 40 is provided with a gas introduction pipe 48 for introducing an inert gas into the growth furnace 12, and is controlled by a gas flow controller 50 in accordance with the growth conditions of the semiconductor single crystal. However, a desired amount of inert gas can be introduced into the growth furnace 12.
  • the quartz crucible 14 a Power is supplied from the power supply to the heater 16 placed around the graphite crucible 14 b through the metal electrode 26 and the current path member 36, which is the melting point of silicon.
  • a raw material melt M is obtained.
  • Table 1 shows the results (Comparative Example 1) of manufacturing a semiconductor single crystal using a heater with a low electric resistance value (a heater with a normal resistance) that is normally used.
  • the semiconductor single crystal was manufactured using a heater with a higher resistance.
  • the results are shown together with the test results (Example 1) when the cultivation was conducted.
  • the resistance value of the heater heat generating portion was 9.5 times the resistance value of the current path member
  • the resistance value of the heater heat generating portion was 7.6 times the resistance value of the current path member. .

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L'invention concerne un appareil de production d'un mono-cristal semi-conducteur au moyen d'un procédé CZ, ainsi qu'un procédé de production d'un mono-cristal semi-conducteur. Dans cet appareil, la consommation de puissance est supprimée par suppression de génération thermique dans un passage destiné à alimenter un courant, des éléments du passage du courant dans le four de croissance de l'appareil de production et une structure dans le four disposée sur la périphérie de celui-ci étant protégés contre une éventuelle détérioration et la durabilité des composants disposés dans le four de croissance pouvant être améliorée. Un dispositif de chauffage est disposé autour d'un creuset, en vue de chauffer et de faire fondre un matériau renfermé dans celui-ci, un passage de courant destiné à alimenter en puissance la partie de génération de chaleur du dispositif de chauffage étant prévu dans le four de croissance de l'appareil de production et une résistance électrique au niveau de la partie de génération de chaleur du dispositif de chauffage étant réglée de manière à ne pas être inférieure à neuf fois celle des éléments constituant le passage du courant.
PCT/JP2001/008328 2000-09-26 2001-09-26 Appareil et procede de production d'un mono-cristal semi-conducteur WO2002027076A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002530835A JP3979291B2 (ja) 2000-09-26 2001-09-26 半導体単結晶の製造装置並びに製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-292646 2000-09-26
JP2000292646 2000-09-26

Publications (1)

Publication Number Publication Date
WO2002027076A1 true WO2002027076A1 (fr) 2002-04-04

Family

ID=18775558

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/008328 WO2002027076A1 (fr) 2000-09-26 2001-09-26 Appareil et procede de production d'un mono-cristal semi-conducteur

Country Status (3)

Country Link
JP (1) JP3979291B2 (fr)
TW (1) TW574442B (fr)
WO (1) WO2002027076A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120831A (ja) * 2008-11-21 2010-06-03 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置
JP2014522371A (ja) * 2011-06-06 2014-09-04 ジーティーエイティー コーポレーション 結晶成長装置用の加熱部品
WO2017090325A1 (fr) * 2015-11-26 2017-06-01 株式会社Sumco Procédé de production d'un monocristal de silicium
CN114592235A (zh) * 2022-03-04 2022-06-07 徐州康信软件技术有限公司 一种用于集成电路生产的单晶炉

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09157084A (ja) * 1995-11-30 1997-06-17 Sumitomo Sitix Corp 単結晶製造装置
JPH1087393A (ja) * 1996-09-06 1998-04-07 Mitsubishi Materials Shilicon Corp 単結晶引上装置におけるヒーター電極構造
US5887015A (en) * 1995-12-27 1999-03-23 Shin-Etsu Handotai Co., Ltd. Heater mechanism for crystal pulling apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09157084A (ja) * 1995-11-30 1997-06-17 Sumitomo Sitix Corp 単結晶製造装置
US5887015A (en) * 1995-12-27 1999-03-23 Shin-Etsu Handotai Co., Ltd. Heater mechanism for crystal pulling apparatus
JPH1087393A (ja) * 1996-09-06 1998-04-07 Mitsubishi Materials Shilicon Corp 単結晶引上装置におけるヒーター電極構造

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010120831A (ja) * 2008-11-21 2010-06-03 Sumitomo Metal Mining Co Ltd サファイア単結晶育成装置
JP2014522371A (ja) * 2011-06-06 2014-09-04 ジーティーエイティー コーポレーション 結晶成長装置用の加熱部品
US9303331B2 (en) 2011-06-06 2016-04-05 Gtat Corporation Heater assembly for crystal growth apparatus
WO2017090325A1 (fr) * 2015-11-26 2017-06-01 株式会社Sumco Procédé de production d'un monocristal de silicium
JP2017095323A (ja) * 2015-11-26 2017-06-01 株式会社Sumco シリコン単結晶の製造方法
US10711368B2 (en) 2015-11-26 2020-07-14 Sumco Corporation Method for producing silicon single crystal
CN114592235A (zh) * 2022-03-04 2022-06-07 徐州康信软件技术有限公司 一种用于集成电路生产的单晶炉
CN114592235B (zh) * 2022-03-04 2022-12-09 徐州康信软件技术有限公司 一种用于集成电路生产的单晶炉

Also Published As

Publication number Publication date
JPWO2002027076A1 (ja) 2004-02-05
JP3979291B2 (ja) 2007-09-19
TW574442B (en) 2004-02-01

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