CN103703170B - 用于晶体生长装置的加热器组件 - Google Patents

用于晶体生长装置的加热器组件 Download PDF

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Publication number
CN103703170B
CN103703170B CN201280034180.4A CN201280034180A CN103703170B CN 103703170 B CN103703170 B CN 103703170B CN 201280034180 A CN201280034180 A CN 201280034180A CN 103703170 B CN103703170 B CN 103703170B
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China
Prior art keywords
heating
crystal growth
crucible
heating element
growth apparatus
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CN201280034180.4A
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English (en)
Chinese (zh)
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CN103703170A (zh
Inventor
C·夏提亚
P·S·拉加万
A·安德鲁哈维
D·拉基
B·G·拉维
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GTAT Corp
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GTAT Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B14/00—Crucible or pot furnaces
    • F27B14/08—Details specially adapted for crucible or pot furnaces
    • F27B14/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D11/00—Arrangement of elements for electric heating in or on furnaces
    • F27D11/02—Ohmic resistance heating
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Furnace Details (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
CN201280034180.4A 2011-06-06 2012-05-01 用于晶体生长装置的加热器组件 Active CN103703170B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161493804P 2011-06-06 2011-06-06
US61/493,804 2011-06-06
PCT/US2012/035970 WO2012170124A2 (en) 2011-06-06 2012-05-01 Heater assembly for crystal growth apparatus

Publications (2)

Publication Number Publication Date
CN103703170A CN103703170A (zh) 2014-04-02
CN103703170B true CN103703170B (zh) 2017-04-26

Family

ID=47292263

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CN201280034180.4A Active CN103703170B (zh) 2011-06-06 2012-05-01 用于晶体生长装置的加热器组件

Country Status (6)

Country Link
US (1) US9303331B2 (enExample)
JP (1) JP6013467B2 (enExample)
KR (1) KR101909439B1 (enExample)
CN (1) CN103703170B (enExample)
TW (1) TWI593839B (enExample)
WO (1) WO2012170124A2 (enExample)

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CN101070608B (zh) * 2006-12-29 2010-06-23 嘉兴学院 旋转多坩埚下降法晶体生长系统
KR101263082B1 (ko) * 2010-11-15 2013-05-09 주식회사 엘지실트론 사파이어 잉곳 성장장치
CN103374758B (zh) * 2012-04-25 2016-03-02 志圣科技（广州）有限公司 晶体生长加热系统
KR20160000956U (ko) * 2013-07-15 2016-03-23 그라프텍 인터내셔널 홀딩스 인코포레이티드 실리콘 결정 생산 장치
CN105379415A (zh) * 2013-07-15 2016-03-02 莫门蒂夫性能材料股份有限公司 带涂层的石墨加热器构造
CN103741212A (zh) * 2013-12-19 2014-04-23 镇江环太硅科技有限公司 长晶炉及长晶炉热场的控制方法
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN104880069B (zh) * 2015-05-27 2016-10-26 海南大学 一种防热散失烧结炉
CN104962864B (zh) * 2015-07-23 2017-11-10 京东方科技集团股份有限公司 坩埚装置和蒸镀设备
KR101639627B1 (ko) * 2015-09-07 2016-07-14 에스엠엔티 주식회사 도가니 지지체를 이용한 사파이어 단결정 성장장치 및 이를 이용한 사파이어 단결정 성장방법
US10237921B2 (en) 2016-03-18 2019-03-19 Momentive Performance Materials Inc. Cylindrical heater
CN118380374A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
US10724796B2 (en) 2018-05-24 2020-07-28 Silfex, Inc Furnace for casting near-net shape (NNS) silicon
US11127572B2 (en) 2018-08-07 2021-09-21 Silfex, Inc. L-shaped plasma confinement ring for plasma chambers
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
CN112279260B (zh) * 2020-10-30 2024-08-16 江苏先导微电子科技有限公司 一种高纯硼晶体和高纯硼粉的制备装置

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JPH02116696A (ja) * 1988-10-19 1990-05-01 Gos N I I Proekt Inst Redkometallicheskoj Prom 石英るつぼを強化するためのシェル
JPH09235175A (ja) * 1996-03-01 1997-09-09 Sumitomo Sitix Corp 単結晶引上げ装置
EP1085112A2 (en) * 1999-09-20 2001-03-21 Union Material Inc. Method of fabricating a single crystal
WO2001027360A1 (en) * 1999-10-12 2001-04-19 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6652649B1 (en) * 1999-06-29 2003-11-25 Act Optics & Engineering, Inc. Supplemental heating unit for crystal growth furnace
CN2848884Y (zh) * 2005-12-21 2006-12-20 北京有色金属研究总院 一种热场中心轴线对称的装置
CN101074488A (zh) * 2006-04-12 2007-11-21 史考特公司 用于制造单晶或多晶材料、尤其是多晶硅的装置和方法
CN101498038A (zh) * 2008-01-31 2009-08-05 绿能科技股份有限公司 具有加热改良构造的长晶炉
CN101978103A (zh) * 2008-03-19 2011-02-16 Gt太阳能公司 在晶体生长装置中配置加热组件的系统和方法

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JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
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TW200932963A (en) * 2008-01-29 2009-08-01 Green Energy Technology Inc Crystal growing furnace with heating improvement structure
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116696A (ja) * 1988-10-19 1990-05-01 Gos N I I Proekt Inst Redkometallicheskoj Prom 石英るつぼを強化するためのシェル
JPH09235175A (ja) * 1996-03-01 1997-09-09 Sumitomo Sitix Corp 単結晶引上げ装置
US6652649B1 (en) * 1999-06-29 2003-11-25 Act Optics & Engineering, Inc. Supplemental heating unit for crystal growth furnace
EP1085112A2 (en) * 1999-09-20 2001-03-21 Union Material Inc. Method of fabricating a single crystal
WO2001027360A1 (en) * 1999-10-12 2001-04-19 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
CN2848884Y (zh) * 2005-12-21 2006-12-20 北京有色金属研究总院 一种热场中心轴线对称的装置
CN101074488A (zh) * 2006-04-12 2007-11-21 史考特公司 用于制造单晶或多晶材料、尤其是多晶硅的装置和方法
CN101498038A (zh) * 2008-01-31 2009-08-05 绿能科技股份有限公司 具有加热改良构造的长晶炉
CN101978103A (zh) * 2008-03-19 2011-02-16 Gt太阳能公司 在晶体生长装置中配置加热组件的系统和方法

Also Published As

Publication number Publication date
KR20140039031A (ko) 2014-03-31
WO2012170124A3 (en) 2013-05-02
TWI593839B (zh) 2017-08-01
WO2012170124A2 (en) 2012-12-13
JP6013467B2 (ja) 2016-10-25
JP2014522371A (ja) 2014-09-04
TW201305399A (zh) 2013-02-01
US9303331B2 (en) 2016-04-05
US20120312800A1 (en) 2012-12-13
CN103703170A (zh) 2014-04-02
KR101909439B1 (ko) 2018-10-18

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