CN102630256B - 单晶制造装置 - Google Patents

单晶制造装置 Download PDF

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Publication number
CN102630256B
CN102630256B CN201080053719.1A CN201080053719A CN102630256B CN 102630256 B CN102630256 B CN 102630256B CN 201080053719 A CN201080053719 A CN 201080053719A CN 102630256 B CN102630256 B CN 102630256B
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CN
China
Prior art keywords
heater
single crystal
heat
manufacturing apparatus
crystal manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080053719.1A
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English (en)
Chinese (zh)
Other versions
CN102630256A (zh
Inventor
岛田聪郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of CN102630256A publication Critical patent/CN102630256A/zh
Application granted granted Critical
Publication of CN102630256B publication Critical patent/CN102630256B/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201080053719.1A 2010-01-08 2010-12-03 单晶制造装置 Active CN102630256B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010002449A JP5293615B2 (ja) 2010-01-08 2010-01-08 単結晶製造装置
JP2010-002449 2010-01-08
PCT/JP2010/007044 WO2011083529A1 (ja) 2010-01-08 2010-12-03 単結晶製造装置

Publications (2)

Publication Number Publication Date
CN102630256A CN102630256A (zh) 2012-08-08
CN102630256B true CN102630256B (zh) 2015-12-02

Family

ID=44305276

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080053719.1A Active CN102630256B (zh) 2010-01-08 2010-12-03 单晶制造装置

Country Status (6)

Country Link
US (1) US9187844B2 (enExample)
JP (1) JP5293615B2 (enExample)
KR (1) KR101685478B1 (enExample)
CN (1) CN102630256B (enExample)
DE (1) DE112010005100B4 (enExample)
WO (1) WO2011083529A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot
EP2604728A1 (en) 2011-12-12 2013-06-19 Vesuvius France S.A. Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
JP5660019B2 (ja) * 2011-12-13 2015-01-28 信越半導体株式会社 単結晶引上げ装置
KR101658284B1 (ko) * 2014-08-05 2016-09-20 주식회사 엘지실트론 잉곳성장장치
KR102017080B1 (ko) * 2017-12-05 2019-09-02 웅진에너지 주식회사 잉곳 성장장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2630461B1 (fr) 1988-04-20 1990-08-31 Inst Textile De France Procede et dispositif d'alimentation automatique d'une machine a coudre
JP3402041B2 (ja) * 1995-12-28 2003-04-28 信越半導体株式会社 シリコン単結晶の製造装置
JPH09263491A (ja) 1996-03-27 1997-10-07 Shin Etsu Handotai Co Ltd シリコン単結晶の製造装置
JP3482979B2 (ja) 1996-04-09 2004-01-06 三菱住友シリコン株式会社 単結晶引上装置におけるヒーター電極溶損防止装置
JPH10167876A (ja) * 1996-11-29 1998-06-23 Super Silicon Kenkyusho:Kk Ｃｚ結晶製造装置
JP3428624B2 (ja) * 1998-06-12 2003-07-22 三菱住友シリコン株式会社 シリコン単結晶の引上げ方法
JP2002137997A (ja) * 2000-10-31 2002-05-14 Super Silicon Kenkyusho:Kk 単結晶引き上げ装置
JP2009274925A (ja) * 2008-05-16 2009-11-26 Sumco Corp 単結晶引上げ装置およびこれを用いた単結晶の引上げ方法
CN101581542B (zh) 2009-06-16 2012-06-13 重庆大全新能源有限公司 多晶硅还原炉高压启动绝缘电极

Also Published As

Publication number Publication date
DE112010005100B4 (de) 2020-02-13
KR101685478B1 (ko) 2016-12-12
JP2011140421A (ja) 2011-07-21
US20120204784A1 (en) 2012-08-16
DE112010005100T5 (de) 2012-12-13
KR20120112505A (ko) 2012-10-11
WO2011083529A1 (ja) 2011-07-14
JP5293615B2 (ja) 2013-09-18
US9187844B2 (en) 2015-11-17
CN102630256A (zh) 2012-08-08

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