JP2011122241A - ターゲット材料の包装方法、及びターゲットの取り付け方法 - Google Patents
ターゲット材料の包装方法、及びターゲットの取り付け方法 Download PDFInfo
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- JP2011122241A JP2011122241A JP2010252821A JP2010252821A JP2011122241A JP 2011122241 A JP2011122241 A JP 2011122241A JP 2010252821 A JP2010252821 A JP 2010252821A JP 2010252821 A JP2010252821 A JP 2010252821A JP 2011122241 A JP2011122241 A JP 2011122241A
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- 238000004040 coloring Methods 0.000 description 1
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- 229920001577 copolymer Polymers 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 238000010891 electric arc Methods 0.000 description 1
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- 239000003822 epoxy resin Substances 0.000 description 1
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- 238000005242 forging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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Abstract
【解決手段】上記目的を達成するために、ターゲットの製造後から当該ターゲットを取り付けた成膜装置を排気するまでの間、当該ターゲット中のターゲット材料を大気にさらすことなく密封状態を保つ。
【選択図】図1
Description
本実施の形態では、被装着部への取り付け部を有するバッキングプレートと、バッキングプレートに固定されたターゲット材料と、取り付け部を覆うことなくターゲット材料を内包するようにバッキングプレートに装着される包装体とを有し、乾燥気体が包装体の内側に充填されているスパッタリング用ターゲットの製造から該ターゲットを開封するまでの工程について図1を用いて説明する。なお、当該工程は、「(A)加工、(B)熱処理、(C)貼り合わせ、(D)密封、(E)配送、(F)取り付け、(G)排気、(H)開封」、の8つの工程からなる。また、焼結体はターゲット材料の一態様である。
本実施の形態では、実施の形態1で説明したターゲットの製造から該ターゲットを開封するまでの工程の中で、ターゲットを成膜装置に取り付け、成膜室内を排気した後、ターゲットから包装体を外してターゲットを開封する方法について、図2、及び図3を用いてさらに詳細に説明する。
本実施の形態では、実施の形態1及び実施の形態2で説明した包装方法を適用したターゲットを用いて、半導体素子を作製する方法について説明する。なお、本実施の形態では、該半導体素子の一例として、図4に示す薄膜トランジスタの構成とその作製方法を説明する。
本実施の形態では、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
実施の形態3に示す薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、実施の形態3に示す薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、実施の形態3に示す薄膜トランジスタを適用した半導体装置として電子ペーパーの例を示す。
本実施の形態では、実施の形態3に示す薄膜トランジスタを適用した半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
実施の形態3に示す薄膜トランジスタを適用した半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図16、図17に示す。
実施の形態3に示す薄膜トランジスタを用いた半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
11 配線
12 配線
13 配線
14 配線
15 配線
16 配線
17 配線
21 入力端子
22 入力端子
23 入力端子
24 入力端子
25 入力端子
26 出力端子
27 出力端子
31 トランジスタ
32 トランジスタ
33 トランジスタ
34 トランジスタ
35 トランジスタ
36 トランジスタ
37 トランジスタ
38 トランジスタ
39 トランジスタ
40 トランジスタ
41 トランジスタ
51 電源線
52 電源線
53 電源線
61 期間
62 期間
100 基板
102 ゲート絶縁層
102a ゲート絶縁層
102b ゲート絶縁層
103 酸化物半導体層
107 酸化物絶縁膜
108 保護絶縁層
111a ゲート電極
111b ゲート配線層
113 酸化物半導体層
115c 配線層
123 酸化物半導体層
128 コンタクトホール
151 薄膜トランジスタ
300 焼結体
320 バッキングプレート
320a バッキングプレート
320b バッキングプレート
320c バッキングプレート
320d バッキングプレート
321 取り付け部
325a 勘合用ピン
325b 勘合用レール
325c 勘合用レール
325d 勘合用レール
330 気密部材
335 圧力調整弁
340 包装体
340a 包装体
340b 包装体
340c 包装体
340d 包装体
345a 部
345b 摺動部材
345c 摺動部材
345d 摺動部材
400 成膜室
400a 成膜室
400b 成膜室
401 グローブ
405 開封機構
580 基板
581 薄膜トランジスタ
583 絶縁層
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 基板
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4501 基板
4502 画素部
4503a 信号線駆動回路
4504a 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4518a FPC
4519 異方性導電膜
4520 隔壁
4540 導電層
4544 絶縁層
5300 基板
5301 画素部
5302 走査線駆動回路
5303 走査線駆動回路
5304 信号線駆動回路
5305 タイミング制御回路
5601 シフトレジスタ
5602 スイッチング回路
5603 薄膜トランジスタ
5604 配線
5605 配線
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 電極
7004 EL層
7005 電極
7008 電極
7009 隔壁
7011 駆動用TFT
7012 発光素子
7013 電極
7014 EL層
7015 電極
7016 遮蔽膜
7017 導電膜
7019 隔壁
7021 駆動用TFT
7022 発光素子
7023 電極
7024 EL層
7025 電極
7027 導電膜
7029 隔壁
7030 基板
7031 ゲート絶縁層
7032 絶縁層
7032a 酸化物絶縁層
7032b 絶縁層
7033 カラーフィルタ層
7034 オーバーコート層
7035 保護絶縁層
7040 基板
7041 ゲート絶縁層
7042 絶縁層
7042a 酸化物絶縁層
7042b 絶縁層
7043 カラーフィルタ層
7044 オーバーコート層
7045 保護絶縁層
7052a 酸化物絶縁層
7052b 保護絶縁層
7053 平坦化絶縁層
9400 通信装置
9401 筐体
9402 操作ボタン
9403 外部入力端子
9404 マイク
9405 スピーカ
9406 発光部
9410 表示装置
9411 筐体
9412 表示部
9413 操作ボタン
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (8)
- 被装着部への取り付け部を有するバッキングプレートと、
前記バッキングプレートに固定された焼結体と、
前記取り付け部を覆うことなく前記焼結体を内包するように前記バッキングプレートに装着される包装体とを有し、
前記包装体の内側は乾燥気体が充填されていることを特徴とする包装されたスパッタリング用ターゲット。 - 前記包装体の内側が露点−40℃以下の気体で満たされた請求項1記載の包装されたスパッタリング用ターゲット。
- 前記焼結体が金属酸化物を含む請求項1、または請求項2記載の包装されたスパッタリング用ターゲット。
- 前記金属酸化物がインジウムと、ガリウムと、亜鉛を含む請求項3記載の包装されたスパッタリング用ターゲット。
- 前記焼結体が金属を含む請求項1、または請求項2記載の包装されたスパッタリング用ターゲット。
- 前記金属がAl、Cu、Cr、Ta、Ti、Mo、またはWの少なくとも一つを含む請求項5記載の包装されたスパッタリング用ターゲット。
- 露点−40℃以下の乾燥した雰囲気下で、被装着部への取り付け部を有するバッキングプレートに焼結体を固定し、
前記取り付け部を覆うことなく前記焼結体を内包するように前記バッキングプレートに包装体を装着することを特徴とするスパッタリング用ターゲットの包装方法。 - 露点−40℃以下の乾燥した雰囲気下で、被装着部への取り付け部を覆うことなく、ターゲットをケースに収納し、
前記ケースに収納されたターゲットを成膜装置の成膜室の装着部に取り付け、
前記成膜室を排気し、
排気された前記成膜室内で前記ケースを開封する包装されたスパッタリング用ターゲットの取り付け方法。
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US8753491B2 (en) | 2014-06-17 |
JP5586427B2 (ja) | 2014-09-10 |
KR101975741B1 (ko) | 2019-05-09 |
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