CH611938A5 - - Google Patents

Info

Publication number
CH611938A5
CH611938A5 CH623776A CH623776A CH611938A5 CH 611938 A5 CH611938 A5 CH 611938A5 CH 623776 A CH623776 A CH 623776A CH 623776 A CH623776 A CH 623776A CH 611938 A5 CH611938 A5 CH 611938A5
Authority
CH
Switzerland
Application number
CH623776A
Inventor
Bogdan Zega
Original Assignee
Battelle Memorial Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Battelle Memorial Institute filed Critical Battelle Memorial Institute
Priority to CH623776A priority Critical patent/CH611938A5/xx
Priority to DE19772722708 priority patent/DE2722708A1/de
Priority to SE7705766A priority patent/SE7705766L/
Priority to AT352977A priority patent/AT354214B/de
Priority to IT23725/77A priority patent/IT1085894B/it
Priority to NL7705483A priority patent/NL7705483A/xx
Priority to US05/798,160 priority patent/US4116791A/en
Priority to FR7715314A priority patent/FR2352393A1/fr
Priority to GB20857/77A priority patent/GB1548061A/en
Priority to BE177725A priority patent/BE854816A/xx
Priority to JP52057161A priority patent/JPS608303B2/ja
Publication of CH611938A5 publication Critical patent/CH611938A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CH623776A 1976-05-19 1976-05-19 CH611938A5 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
CH623776A CH611938A5 (ja) 1976-05-19 1976-05-19
DE19772722708 DE2722708A1 (de) 1976-05-19 1977-05-16 Verfahren zur ablagerung unter vakuum bei einer glimmentladung und anordnung fuer die glimmentladung
SE7705766A SE7705766L (sv) 1976-05-19 1977-05-17 Forfarande och anordning for att astadkomma en beleggning i en luminiscent urladdning
AT352977A AT354214B (de) 1976-05-19 1977-05-17 Verfahren zur ablagerung bei einer glimment- ladung, sowie anordnung fuer die glimmentladung zur durchfuehrung des verfahrens
IT23725/77A IT1085894B (it) 1976-05-19 1977-05-18 Procedimento per effettuare un deposito in una scarica luminescente su almeno un substrato e un decapaggio ionico di questo substrato e dispositivo per l'attuazione di questo procedimento
NL7705483A NL7705483A (nl) 1976-05-19 1977-05-18 Werkwijze voor het in een gloei-ontlading uit- voeren van een afzetting op een substraat, als- mede een afschuring door ionen van dit substraat, en inrichting voor het toepassen van deze werk- wijze.
US05/798,160 US4116791A (en) 1976-05-19 1977-05-18 Method and apparatus for forming a deposit by means of ion plating using a magnetron cathode target as source of coating material
FR7715314A FR2352393A1 (fr) 1976-05-19 1977-05-18 Procede pour effectuer un depot dans une decharge luminescente sur au moins un substrat, et un decapage ionique de ce substrat et dispositif pour la mise en oeuvre de ce procede
GB20857/77A GB1548061A (en) 1976-05-19 1977-05-18 Method and apparatus for forming a deposit by means of a glow discharge
BE177725A BE854816A (fr) 1976-05-19 1977-05-18 Procede de depot dans une decharge luminescente sur un substrat et de dacapage ionique de celui-ci et dispositif de mise en oeuvre
JP52057161A JPS608303B2 (ja) 1976-05-19 1977-05-19 基板のイオンによる清浄化および被覆の方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH623776A CH611938A5 (ja) 1976-05-19 1976-05-19

Publications (1)

Publication Number Publication Date
CH611938A5 true CH611938A5 (ja) 1979-06-29

Family

ID=4306421

Family Applications (1)

Application Number Title Priority Date Filing Date
CH623776A CH611938A5 (ja) 1976-05-19 1976-05-19

Country Status (11)

Country Link
US (1) US4116791A (ja)
JP (1) JPS608303B2 (ja)
AT (1) AT354214B (ja)
BE (1) BE854816A (ja)
CH (1) CH611938A5 (ja)
DE (1) DE2722708A1 (ja)
FR (1) FR2352393A1 (ja)
GB (1) GB1548061A (ja)
IT (1) IT1085894B (ja)
NL (1) NL7705483A (ja)
SE (1) SE7705766L (ja)

Families Citing this family (76)

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JPS5723606Y2 (ja) * 1978-04-28 1982-05-22
GB2051877B (en) * 1979-04-09 1983-03-02 Vac Tec Syst Magnetically enhanced sputtering device and method
FR2507126A2 (fr) * 1980-06-06 1982-12-10 Stephanois Rech Mec Procede pour la fabrication d'une couche composite resistant a la fois au grippage, a l'abrasion, a la corrosion et a la fatigue par contraintes alternees, et couche composite ainsi obtenue
JPS5778519A (en) * 1980-11-05 1982-05-17 Citizen Watch Co Ltd Production of electrochromic display element
DE3107914A1 (de) * 1981-03-02 1982-09-16 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum beschichten von formteilen durch katodenzerstaeubung
FR2501727A1 (fr) * 1981-03-13 1982-09-17 Vide Traitement Procede de traitements thermochimiques de metaux par bombardement ionique
US4525262A (en) * 1982-01-26 1985-06-25 Materials Research Corporation Magnetron reactive bias sputtering method and apparatus
DE3371439D1 (en) * 1982-01-26 1987-06-11 Materials Research Corp Magnetron reactive bias sputtering method and apparatus
DE3272083D1 (en) 1982-03-31 1986-08-28 Ibm Deutschland Reactor for reactive ion etching, and etching process
FR2528452B1 (fr) * 1982-06-11 1985-12-20 Vide Traitement Procede et dispositif pour la realisation de depots metalliques ou de composes metalliques, a la surface d'une piece en un materiau electriquement conducteur
DE3461301D1 (en) * 1983-04-18 1987-01-02 Battelle Development Corp Hard layer formed by incorporating nitrogen into mo or w metal and method for obtaining this layer
US4420386A (en) * 1983-04-22 1983-12-13 White Engineering Corporation Method for pure ion plating using magnetic fields
US4468309A (en) * 1983-04-22 1984-08-28 White Engineering Corporation Method for resisting galling
US4520268A (en) * 1983-05-26 1985-05-28 Pauline Y. Lau Method and apparatus for introducing normally solid materials into substrate surfaces
US4512864A (en) * 1983-11-30 1985-04-23 Ppg Industries, Inc. Low resistance indium oxide films
US4865712A (en) * 1984-05-17 1989-09-12 Varian Associates, Inc. Apparatus for manufacturing planarized aluminum films
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US4826365A (en) * 1988-01-20 1989-05-02 White Engineering Corporation Material-working tools and method for lubricating
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
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DE3941795A1 (de) * 1989-12-19 1991-06-20 Leybold Ag Optisch wirkende schicht fuer substrate, die insbesondere eine hohe antireflexwirkung aufweist, und verfahren zur herstellung der schicht
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US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5411600A (en) * 1992-06-03 1995-05-02 Eastman Kodak Company Ultrathin film thermocouples and method of manufacture
GB2282824A (en) * 1993-10-14 1995-04-19 Secr Defence Reinforcement particles pre-coated with metal matrix; particle-reinforced metal matrix composites
DE4434428A1 (de) * 1994-09-27 1996-03-28 Widia Gmbh Verbundkörper, Verwendung dieses Verbundkörpers und Verfahren zu seiner Herstellung
US5859404A (en) * 1995-10-12 1999-01-12 Hughes Electronics Corporation Method and apparatus for plasma processing a workpiece in an enveloping plasma
GB2306510B (en) * 1995-11-02 1999-06-23 Univ Surrey Modification of metal surfaces
DE19609804C1 (de) * 1996-03-13 1997-07-31 Bosch Gmbh Robert Einrichtung, ihre Verwendung und ihr Betrieb zum Vakuumbeschichten von Schüttgut
JP2002527628A (ja) * 1998-10-21 2002-08-27 シーメンス アクチエンゲゼルシヤフト 製品の浄化方法と被覆方法およびそのための装置
CH697036A5 (de) † 1998-12-02 2008-03-31 Sulzer Metco Ag Verfahren zur Plasma-Oberflächenbehandlung von Substraten sowie Einrichtung zur Durchführung des Verfahrens.
US6352626B1 (en) 1999-04-19 2002-03-05 Von Zweck Heimart Sputter ion source for boron and other targets
US6939434B2 (en) 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US6893907B2 (en) 2002-06-05 2005-05-17 Applied Materials, Inc. Fabrication of silicon-on-insulator structure using plasma immersion ion implantation
US7294563B2 (en) 2000-08-10 2007-11-13 Applied Materials, Inc. Semiconductor on insulator vertical transistor fabrication and doping process
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7183177B2 (en) 2000-08-11 2007-02-27 Applied Materials, Inc. Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
US7430984B2 (en) * 2000-08-11 2008-10-07 Applied Materials, Inc. Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US7037813B2 (en) * 2000-08-11 2006-05-02 Applied Materials, Inc. Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage
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US7479456B2 (en) 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
JP4570233B2 (ja) * 2000-10-25 2010-10-27 株式会社アルバック 薄膜形成方法及びその形成装置
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SE526857C2 (sv) * 2003-12-22 2005-11-08 Seco Tools Ab Sätt att belägga ett skärverktyg med användning av reaktiv magnetronsputtering
US7291360B2 (en) 2004-03-26 2007-11-06 Applied Materials, Inc. Chemical vapor deposition plasma process using plural ion shower grids
US7244474B2 (en) 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US8058156B2 (en) 2004-07-20 2011-11-15 Applied Materials, Inc. Plasma immersion ion implantation reactor having multiple ion shower grids
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CN100483643C (zh) * 2006-07-13 2009-04-29 中芯国际集成电路制造(上海)有限公司 一种制作低介电常数层的新方法及其应用
CN101583736A (zh) * 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
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CN101851746A (zh) * 2009-04-03 2010-10-06 鸿富锦精密工业（深圳）有限公司 磁控式溅镀靶及磁控式溅镀系统
KR101975741B1 (ko) * 2009-11-13 2019-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 타깃 재료의 포장 방법 및 타깃의 장착 방법
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Also Published As

Publication number Publication date
ATA352977A (de) 1979-05-15
FR2352393A1 (fr) 1977-12-16
DE2722708A1 (de) 1977-12-08
BE854816A (fr) 1977-11-18
SE7705766L (sv) 1977-11-20
GB1548061A (en) 1979-07-04
JPS608303B2 (ja) 1985-03-01
US4116791A (en) 1978-09-26
FR2352393B1 (ja) 1983-02-11
IT1085894B (it) 1985-05-28
NL7705483A (nl) 1977-11-22
JPS5310384A (en) 1978-01-30
AT354214B (de) 1979-12-27

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Owner name: ASU COMPOSANTS S.A.

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