JP2011121827A - 黒鉛ルツボ及びシリコン単結晶製造装置 - Google Patents
黒鉛ルツボ及びシリコン単結晶製造装置 Download PDFInfo
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- JP2011121827A JP2011121827A JP2009281808A JP2009281808A JP2011121827A JP 2011121827 A JP2011121827 A JP 2011121827A JP 2009281808 A JP2009281808 A JP 2009281808A JP 2009281808 A JP2009281808 A JP 2009281808A JP 2011121827 A JP2011121827 A JP 2011121827A
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- Prior art keywords
- crucible
- graphite crucible
- gas
- graphite
- quartz
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 70
- 239000010439 graphite Substances 0.000 title claims abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 239000013078 crystal Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000007872 degassing Methods 0.000 claims abstract 3
- 239000010453 quartz Substances 0.000 abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 41
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 38
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
- C30B15/12—Double crucible methods
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
【解決手段】ルツボのコーナ部にガス抜き孔が設けられていることを特徴とする。当該ガス抜き孔を通じて、石英ルツボと黒鉛ルツボとの反応により発生するガスを外に放散させて、黒鉛ルツボ表面でのSiC形成、ガス圧による石英ルツボ変形を防止する。
【選択図】図1
Description
SiO2 + Si = SiO
SiO2 + C = SiO + CO
SiO + 2C = SiC + CO
図1に本発明の黒鉛ルツボ1の一例が示されている通り、本発明の黒鉛ルツボは、通常(内側の)側面部2がほぼ垂直の円筒形状であり、底部3は適当なアールを持たせた形状である。そのコーナ部4にガス抜き孔5が設けられていることを特徴とする。ここで黒鉛ルツボ1はチョクラルスキー法によりシリコン単結晶を製造する際に用いる従来公知の黒鉛ルツボと基本的には同じであってよく、分割型か一体型か、サイズ、形状、材料については特に制限はない。従来公知の分割型の場合、ルツボが2,3個に分割されたものであって、使用の際には一体として上で説明した形状をとるものである。ここで本発明の黒鉛ルツボのコーナ部とは側面部と底部をつなぐ部分(範囲)を意味する。本発明の黒鉛ルツボは使用の際コーナ部で石英ルツボと溶融シリコンの主な荷重を支える機能を有する。使用の際石英ルツボは軟化点付近にまで加熱されることから、底部とコーナ部ではほぼ黒鉛ルツボと密着した状態となり、所望の加熱効果を奏する。ガス抜き孔5は係るコーナ部の黒鉛ルツボの内側から外側へとほぼ水平の孔として設けられている。
本発明のチョクラルスキー法によるシリコン単結晶製造装置は、従来公知の装置で用いられる黒鉛坩堝に代えて、上で説明した本発明の黒鉛ルツボを備えたことを特徴とする。従って従来公知の製造条件下で、石英ルツボと黒鉛ルツボの間で発生したCOガスは速やかに黒鉛ルツボのガス抜き孔から外部へ排出されることとなる。この結果、黒鉛ルツボの内側へのSiCの形成蓄積が抑制され、COガス圧蓄積による石英ルツボの変形を抑制することができる。
2 側面部
3 底部
4 コーナ部
5 ガス抜き孔
21 不活性ガス
25 ガス抜き孔
26 内部
27 外側圧
28 隙間
Claims (3)
- チョクラルスキー法によりシリコン単結晶を製造する際に用いる黒鉛ルツボであって、黒鉛ルツボのコーナ部にガス抜き孔が設けられていることを特徴とする、黒鉛ルツボ。
- 前記ガス抜き孔の方向が、ほぼ水平方向であることを特徴とする、請求項1に記載の黒鉛ルツボ。
- 請求項1又は2に記載の黒鉛ルツボを備えたチョクラルスキー法によるシリコン単結晶製造装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009281808A JP4918130B2 (ja) | 2009-12-11 | 2009-12-11 | 黒鉛ルツボ及びシリコン単結晶製造装置 |
US12/913,957 US8992682B2 (en) | 2009-12-11 | 2010-10-28 | Graphite crucible and silicon single crystal manufacturing apparatus |
KR1020100116246A KR101297473B1 (ko) | 2009-12-11 | 2010-11-22 | 흑연 도가니 및 실리콘 단결정 제조용 장치 |
TW099140948A TWI439582B (zh) | 2009-12-11 | 2010-11-26 | 石墨坩堝及製造矽單晶之裝置 |
EP10193445A EP2336396B1 (en) | 2009-12-11 | 2010-12-02 | Graphite crucible and silicon single crystal manufacturing apparatus |
SG2010089795A SG172553A1 (en) | 2009-12-11 | 2010-12-06 | Graphite crucible and silicon single crystal manufacturing apparatus |
CN201010583556.XA CN102094235B (zh) | 2009-12-11 | 2010-12-08 | 石墨坩埚及制造硅单晶的装置 |
Applications Claiming Priority (1)
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JP2009281808A JP4918130B2 (ja) | 2009-12-11 | 2009-12-11 | 黒鉛ルツボ及びシリコン単結晶製造装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011121827A true JP2011121827A (ja) | 2011-06-23 |
JP4918130B2 JP4918130B2 (ja) | 2012-04-18 |
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JP2009281808A Active JP4918130B2 (ja) | 2009-12-11 | 2009-12-11 | 黒鉛ルツボ及びシリコン単結晶製造装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8992682B2 (ja) |
EP (1) | EP2336396B1 (ja) |
JP (1) | JP4918130B2 (ja) |
KR (1) | KR101297473B1 (ja) |
CN (1) | CN102094235B (ja) |
SG (1) | SG172553A1 (ja) |
TW (1) | TWI439582B (ja) |
Cited By (3)
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WO2017082112A1 (ja) * | 2015-11-13 | 2017-05-18 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP2021075421A (ja) * | 2019-11-11 | 2021-05-20 | 株式会社Sumco | 炭素製ルツボ |
CN113046824A (zh) * | 2021-03-23 | 2021-06-29 | 湖南世鑫新材料有限公司 | 单晶硅提拉用坩埚系统 |
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CN102719881A (zh) * | 2012-07-06 | 2012-10-10 | 乐山新天源太阳能科技有限公司 | 用于单晶炉的石墨坩埚 |
KR101494531B1 (ko) * | 2013-06-27 | 2015-02-17 | 웅진에너지 주식회사 | 잉곳성장장치의 도가니 |
CN106894079A (zh) * | 2015-12-21 | 2017-06-27 | 上海超硅半导体有限公司 | 单晶硅锭生长装置 |
CN106012000A (zh) * | 2016-08-11 | 2016-10-12 | 内蒙古中环光伏材料有限公司 | 一种硅料生产用坩埚装置 |
CN106119959A (zh) * | 2016-08-30 | 2016-11-16 | 常熟华融太阳能新型材料有限公司 | 一种多晶硅铸锭用石英陶瓷坩埚 |
KR102237292B1 (ko) | 2019-07-31 | 2021-04-06 | 에스케이실트론 주식회사 | 잉곳 성장 장치용 도가니 |
CN110923805B (zh) * | 2020-01-09 | 2021-12-21 | 包头美科硅能源有限公司 | 一种用于增加rcz用石英坩埚寿命的方法 |
CN115522257A (zh) * | 2021-06-25 | 2022-12-27 | 上海超硅半导体股份有限公司 | 一种集成电路用晶体生长石墨坩埚 |
CN115522256A (zh) * | 2021-06-25 | 2022-12-27 | 上海超硅半导体股份有限公司 | 一种集成电路用晶体生长石墨坩埚加工方法 |
WO2023230243A1 (en) * | 2022-05-25 | 2023-11-30 | Luxium Solutions, Llc | Enclosed crystal growth |
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-
2009
- 2009-12-11 JP JP2009281808A patent/JP4918130B2/ja active Active
-
2010
- 2010-10-28 US US12/913,957 patent/US8992682B2/en active Active
- 2010-11-22 KR KR1020100116246A patent/KR101297473B1/ko active IP Right Grant
- 2010-11-26 TW TW099140948A patent/TWI439582B/zh active
- 2010-12-02 EP EP10193445A patent/EP2336396B1/en active Active
- 2010-12-06 SG SG2010089795A patent/SG172553A1/en unknown
- 2010-12-08 CN CN201010583556.XA patent/CN102094235B/zh active Active
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JPS58140392A (ja) * | 1982-02-16 | 1983-08-20 | Komatsu Denshi Kinzoku Kk | シリコン単結晶引上方法およびその装置 |
JPS6144791A (ja) * | 1984-08-09 | 1986-03-04 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置の炭素ルツボ |
JPS6418987A (en) * | 1987-07-14 | 1989-01-23 | Sony Corp | Single crystal growth unit |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017082112A1 (ja) * | 2015-11-13 | 2017-05-18 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN108350603A (zh) * | 2015-11-13 | 2018-07-31 | 胜高股份有限公司 | 单晶硅的制造方法 |
US10724150B2 (en) | 2015-11-13 | 2020-07-28 | Sumco Corporation | Method of manufacturing silicon single crystal |
CN108350603B (zh) * | 2015-11-13 | 2020-11-13 | 胜高股份有限公司 | 单晶硅的制造方法 |
JP2021075421A (ja) * | 2019-11-11 | 2021-05-20 | 株式会社Sumco | 炭素製ルツボ |
JP7192745B2 (ja) | 2019-11-11 | 2022-12-20 | 株式会社Sumco | 炭素製ルツボ |
CN113046824A (zh) * | 2021-03-23 | 2021-06-29 | 湖南世鑫新材料有限公司 | 单晶硅提拉用坩埚系统 |
Also Published As
Publication number | Publication date |
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EP2336396A1 (en) | 2011-06-22 |
US20110139064A1 (en) | 2011-06-16 |
SG172553A1 (en) | 2011-07-28 |
CN102094235B (zh) | 2014-08-20 |
CN102094235A (zh) | 2011-06-15 |
TWI439582B (zh) | 2014-06-01 |
US8992682B2 (en) | 2015-03-31 |
KR20110066850A (ko) | 2011-06-17 |
TW201120257A (en) | 2011-06-16 |
KR101297473B1 (ko) | 2013-08-16 |
EP2336396B1 (en) | 2012-07-04 |
JP4918130B2 (ja) | 2012-04-18 |
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