JP2011119644A - 半導体装置の製造方法及び基板処理装置 - Google Patents

半導体装置の製造方法及び基板処理装置 Download PDF

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Publication number
JP2011119644A
JP2011119644A JP2010146008A JP2010146008A JP2011119644A JP 2011119644 A JP2011119644 A JP 2011119644A JP 2010146008 A JP2010146008 A JP 2010146008A JP 2010146008 A JP2010146008 A JP 2010146008A JP 2011119644 A JP2011119644 A JP 2011119644A
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JP
Japan
Prior art keywords
pressure
flow rate
sih
film
initial stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010146008A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011119644A5 (https=
Inventor
Takeo Hanashima
健夫 花島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2010146008A priority Critical patent/JP2011119644A/ja
Priority to US12/897,037 priority patent/US20110104879A1/en
Priority to TW099136917A priority patent/TW201133560A/zh
Publication of JP2011119644A publication Critical patent/JP2011119644A/ja
Publication of JP2011119644A5 publication Critical patent/JP2011119644A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010146008A 2009-10-30 2010-06-28 半導体装置の製造方法及び基板処理装置 Pending JP2011119644A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010146008A JP2011119644A (ja) 2009-10-30 2010-06-28 半導体装置の製造方法及び基板処理装置
US12/897,037 US20110104879A1 (en) 2009-10-30 2010-10-04 Method of manufacturing semiconductor device and substrate processing apparatus
TW099136917A TW201133560A (en) 2009-10-30 2010-10-28 Method of manufacturing semiconductor device and substrate processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009249628 2009-10-30
JP2009249628 2009-10-30
JP2010146008A JP2011119644A (ja) 2009-10-30 2010-06-28 半導体装置の製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
JP2011119644A true JP2011119644A (ja) 2011-06-16
JP2011119644A5 JP2011119644A5 (https=) 2013-08-08

Family

ID=43925877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010146008A Pending JP2011119644A (ja) 2009-10-30 2010-06-28 半導体装置の製造方法及び基板処理装置

Country Status (3)

Country Link
US (1) US20110104879A1 (https=)
JP (1) JP2011119644A (https=)
TW (1) TW201133560A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117977A (ja) * 2015-12-25 2017-06-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP2023065305A (ja) * 2021-10-27 2023-05-12 東京エレクトロン株式会社 成膜方法及び成膜システム

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103673582B (zh) * 2013-12-31 2016-03-02 北京七星华创电子股份有限公司 立式炉设备降舟过程中控制装载区温度的方法
JP7227950B2 (ja) * 2020-09-23 2023-02-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
US12521775B2 (en) * 2021-08-30 2026-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140777A (ja) * 1987-11-27 1989-06-01 Sumitomo Electric Ind Ltd 薄膜光起電力素子の製造方法
JPH08179536A (ja) * 1994-12-27 1996-07-12 Canon Inc 電子写真感光体及び光受容部材の製造方法
JPH09129626A (ja) * 1995-11-01 1997-05-16 Sony Corp 薄膜形成方法
JP2001015708A (ja) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc 半導体装置の製造方法
TW200411746A (en) * 2002-12-20 2004-07-01 Taiwan Semiconductor Mfg Method for producing amorphous silicon layer with reduced surface defects
JP2005026253A (ja) * 2003-06-30 2005-01-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2008214659A (ja) * 2007-02-28 2008-09-18 Canon Inc 堆積膜の形成方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284267A (ja) * 2000-04-03 2001-10-12 Canon Inc 排気処理方法、プラズマ処理方法及びプラズマ処理装置
KR101023364B1 (ko) * 2002-06-27 2011-03-18 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 기판 지지체 및 반도체 장치의 제조 방법
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140777A (ja) * 1987-11-27 1989-06-01 Sumitomo Electric Ind Ltd 薄膜光起電力素子の製造方法
JPH08179536A (ja) * 1994-12-27 1996-07-12 Canon Inc 電子写真感光体及び光受容部材の製造方法
JPH09129626A (ja) * 1995-11-01 1997-05-16 Sony Corp 薄膜形成方法
JP2001015708A (ja) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc 半導体装置の製造方法
TW200411746A (en) * 2002-12-20 2004-07-01 Taiwan Semiconductor Mfg Method for producing amorphous silicon layer with reduced surface defects
JP2005026253A (ja) * 2003-06-30 2005-01-27 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2008214659A (ja) * 2007-02-28 2008-09-18 Canon Inc 堆積膜の形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017117977A (ja) * 2015-12-25 2017-06-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP2023065305A (ja) * 2021-10-27 2023-05-12 東京エレクトロン株式会社 成膜方法及び成膜システム

Also Published As

Publication number Publication date
US20110104879A1 (en) 2011-05-05
TW201133560A (en) 2011-10-01

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