TW201133560A - Method of manufacturing semiconductor device and substrate processing apparatus - Google Patents

Method of manufacturing semiconductor device and substrate processing apparatus Download PDF

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Publication number
TW201133560A
TW201133560A TW099136917A TW99136917A TW201133560A TW 201133560 A TW201133560 A TW 201133560A TW 099136917 A TW099136917 A TW 099136917A TW 99136917 A TW99136917 A TW 99136917A TW 201133560 A TW201133560 A TW 201133560A
Authority
TW
Taiwan
Prior art keywords
pressure
flow rate
film
initial stage
furnace
Prior art date
Application number
TW099136917A
Other languages
English (en)
Chinese (zh)
Inventor
Takeo Hanashima
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW201133560A publication Critical patent/TW201133560A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW099136917A 2009-10-30 2010-10-28 Method of manufacturing semiconductor device and substrate processing apparatus TW201133560A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009249628 2009-10-30
JP2010146008A JP2011119644A (ja) 2009-10-30 2010-06-28 半導体装置の製造方法及び基板処理装置

Publications (1)

Publication Number Publication Date
TW201133560A true TW201133560A (en) 2011-10-01

Family

ID=43925877

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099136917A TW201133560A (en) 2009-10-30 2010-10-28 Method of manufacturing semiconductor device and substrate processing apparatus

Country Status (3)

Country Link
US (1) US20110104879A1 (https=)
JP (1) JP2011119644A (https=)
TW (1) TW201133560A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103673582B (zh) * 2013-12-31 2016-03-02 北京七星华创电子股份有限公司 立式炉设备降舟过程中控制装载区温度的方法
JP6594768B2 (ja) * 2015-12-25 2019-10-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP7227950B2 (ja) * 2020-09-23 2023-02-22 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
US12521775B2 (en) * 2021-08-30 2026-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device manufacturing system and method for manufacturing semiconductor device
JP2023065305A (ja) * 2021-10-27 2023-05-12 東京エレクトロン株式会社 成膜方法及び成膜システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140777A (ja) * 1987-11-27 1989-06-01 Sumitomo Electric Ind Ltd 薄膜光起電力素子の製造方法
JPH08179536A (ja) * 1994-12-27 1996-07-12 Canon Inc 電子写真感光体及び光受容部材の製造方法
JPH09129626A (ja) * 1995-11-01 1997-05-16 Sony Corp 薄膜形成方法
JP2001015708A (ja) * 1999-06-28 2001-01-19 Hitachi Kokusai Electric Inc 半導体装置の製造方法
JP2001284267A (ja) * 2000-04-03 2001-10-12 Canon Inc 排気処理方法、プラズマ処理方法及びプラズマ処理装置
KR101023364B1 (ko) * 2002-06-27 2011-03-18 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 기판 지지체 및 반도체 장치의 제조 방법
TWI232506B (en) * 2002-12-20 2005-05-11 Taiwan Semiconductor Mfg Method for producing amorphous silicon layer with reduced surface defects
JP4456341B2 (ja) * 2003-06-30 2010-04-28 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
JP2008214659A (ja) * 2007-02-28 2008-09-18 Canon Inc 堆積膜の形成方法
US20080299747A1 (en) * 2007-05-30 2008-12-04 Asm Japan K.K. Method for forming amorphouse silicon film by plasma cvd

Also Published As

Publication number Publication date
US20110104879A1 (en) 2011-05-05
JP2011119644A (ja) 2011-06-16

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