JP2011086933A5 - - Google Patents

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Publication number
JP2011086933A5
JP2011086933A5 JP2010223671A JP2010223671A JP2011086933A5 JP 2011086933 A5 JP2011086933 A5 JP 2011086933A5 JP 2010223671 A JP2010223671 A JP 2010223671A JP 2010223671 A JP2010223671 A JP 2010223671A JP 2011086933 A5 JP2011086933 A5 JP 2011086933A5
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JP
Japan
Prior art keywords
film
semiconductor
forming
etching
metal
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JP2010223671A
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English (en)
Japanese (ja)
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JP2011086933A (ja
JP5851089B2 (ja
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Priority claimed from KR1020090099364A external-priority patent/KR20110042614A/ko
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Publication of JP2011086933A5 publication Critical patent/JP2011086933A5/ja
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JP2010223671A 2009-10-19 2010-10-01 半導体素子の形成方法 Active JP5851089B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090099364A KR20110042614A (ko) 2009-10-19 2009-10-19 반도체 소자 및 그 형성방법
KR10-2009-0099364 2009-10-19

Publications (3)

Publication Number Publication Date
JP2011086933A JP2011086933A (ja) 2011-04-28
JP2011086933A5 true JP2011086933A5 (cg-RX-API-DMAC7.html) 2013-11-14
JP5851089B2 JP5851089B2 (ja) 2016-02-03

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ID=43879621

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JP2010223671A Active JP5851089B2 (ja) 2009-10-19 2010-10-01 半導体素子の形成方法

Country Status (4)

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US (3) US8466023B2 (cg-RX-API-DMAC7.html)
JP (1) JP5851089B2 (cg-RX-API-DMAC7.html)
KR (1) KR20110042614A (cg-RX-API-DMAC7.html)
TW (1) TWI506681B (cg-RX-API-DMAC7.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2717214B2 (ja) 1988-09-06 1998-02-18 清水建設株式会社 トラベラーパイリングシステムにおける杭頭構造および杭頭処理方法
KR20110042614A (ko) 2009-10-19 2011-04-27 삼성전자주식회사 반도체 소자 및 그 형성방법
JP5933953B2 (ja) * 2011-10-06 2016-06-15 キヤノン株式会社 半導体装置の製造方法
US8803249B2 (en) * 2012-08-09 2014-08-12 Taiwan Semiconductor Manufacturing Co., Ltd. Profile pre-shaping for replacement poly gate interlayer dielectric
KR102167625B1 (ko) * 2013-10-24 2020-10-19 삼성전자주식회사 반도체 장치 및 그 제조 방법
WO2015117059A1 (en) 2014-02-03 2015-08-06 Alcoa Inc. Resistance welding fastener, apparatus and methods
BR112017007757B1 (pt) 2014-10-13 2021-05-25 Arconic Technologies Llc chapa de brasagem
JP6646679B2 (ja) 2014-12-15 2020-02-14 アーコニック インコーポレイテッドＡｒｃｏｎｉｃ Ｉｎｃ． 同種材料及び異種材料を接合するための抵抗溶接ファスナ、装置及び方法
KR102333699B1 (ko) 2014-12-19 2021-12-02 에스케이하이닉스 주식회사 고유전 금속 게이트스택의 에칭 방법
US10593034B2 (en) 2016-03-25 2020-03-17 Arconic Inc. Resistance welding fasteners, apparatus and methods for joining dissimilar materials and assessing joints made thereby
CN109585293B (zh) * 2017-09-29 2021-12-24 台湾积体电路制造股份有限公司 切割金属工艺中的基脚去除

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175171A (ja) * 1991-12-20 1993-07-13 Nippon Steel Corp ドライエッチング方法
WO1994014198A1 (en) * 1992-12-11 1994-06-23 Intel Corporation A mos transistor having a composite gate electrode and method of fabrication
US5434093A (en) * 1994-08-10 1995-07-18 Intel Corporation Inverted spacer transistor
US6025232A (en) * 1997-11-12 2000-02-15 Micron Technology, Inc. Methods of forming field effect transistors and related field effect transistor constructions
US6344397B1 (en) * 2000-01-05 2002-02-05 Advanced Micro Devices, Inc. Semiconductor device having a gate electrode with enhanced electrical characteristics
US6316323B1 (en) * 2000-03-21 2001-11-13 United Microelectronics Corp. Method for forming bridge free silicide by reverse spacer
TW466609B (en) * 2000-08-17 2001-12-01 United Microelectronics Corp Manufacturing method and structure for polycide gate
US6551941B2 (en) * 2001-02-22 2003-04-22 Applied Materials, Inc. Method of forming a notched silicon-containing gate structure
DE10153619B4 (de) * 2001-10-31 2004-07-29 Infineon Technologies Ag Verfahren zur Herstellung eines Gate-Schichtenstapels für eine integrierte Schaltungsanordnung und integrierte Schaltungsanordnung
US6830975B2 (en) * 2002-01-31 2004-12-14 Micron Technology, Inc. Method of forming field effect transistor comprising at least one of a conductive metal or metal compound in electrical connection with transistor gate semiconductor material
AU2003235175A1 (en) * 2002-04-17 2003-10-27 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its manufacturing method
TW550686B (en) * 2002-08-15 2003-09-01 Nanya Technology Corp Floating gate and method thereof
US6806534B2 (en) * 2003-01-14 2004-10-19 International Business Machines Corporation Damascene method for improved MOS transistor
JP2005175171A (ja) 2003-12-10 2005-06-30 Fujikura Ltd Ｑスイッチ光ファイバレーザ
JP4580657B2 (ja) * 2004-01-30 2010-11-17 株式会社東芝 半導体装置およびその製造方法
US20060011949A1 (en) * 2004-07-18 2006-01-19 Chih-Wei Yang Metal-gate cmos device and fabrication method of making same
US7112479B2 (en) * 2004-08-27 2006-09-26 Micron Technology, Inc. Methods of forming gatelines and transistor devices
US7208424B2 (en) * 2004-09-17 2007-04-24 Freescale Semiconductor, Inc. Method of forming a semiconductor device having a metal layer
KR100602098B1 (ko) 2004-12-30 2006-07-19 동부일렉트로닉스 주식회사 채널 길이를 줄일 수 있는 트랜지스터 형성 방법
KR100645196B1 (ko) * 2005-03-10 2006-11-10 주식회사 하이닉스반도체 플래시 메모리 소자의 게이트 형성 방법
US7361561B2 (en) * 2005-06-24 2008-04-22 Freescale Semiconductor, Inc. Method of making a metal gate semiconductor device
JP2007123890A (ja) 2005-10-28 2007-05-17 Interuniv Micro Electronica Centrum Vzw 改良型ゲートスタックのパターン化用プラズマ
EP1780779A3 (en) * 2005-10-28 2008-06-11 Interuniversitair Microelektronica Centrum ( Imec) A plasma for patterning advanced gate stacks
US20070202700A1 (en) * 2006-02-27 2007-08-30 Applied Materials, Inc. Etch methods to form anisotropic features for high aspect ratio applications
JP5015533B2 (ja) * 2006-09-22 2012-08-29 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7880241B2 (en) * 2007-02-23 2011-02-01 International Business Machines Corporation Low-temperature electrically activated gate electrode and method of fabricating same
KR100868768B1 (ko) * 2007-02-28 2008-11-13 삼성전자주식회사 Ｃｍｏｓ 반도체 소자 및 그 제조방법
JP2009094106A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 半導体装置の製造方法
US20090212332A1 (en) * 2008-02-21 2009-08-27 International Business Machines Corporation Field effect transistor with reduced overlap capacitance
KR20110042614A (ko) 2009-10-19 2011-04-27 삼성전자주식회사 반도체 소자 및 그 형성방법

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