JP2011071361A5 - - Google Patents
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- Publication number
- JP2011071361A5 JP2011071361A5 JP2009221793A JP2009221793A JP2011071361A5 JP 2011071361 A5 JP2011071361 A5 JP 2011071361A5 JP 2009221793 A JP2009221793 A JP 2009221793A JP 2009221793 A JP2009221793 A JP 2009221793A JP 2011071361 A5 JP2011071361 A5 JP 2011071361A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- plasma etching
- etching apparatus
- input amount
- waste material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 53
- 239000010703 silicon Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 238000001020 plasma etching Methods 0.000 claims description 23
- 239000002699 waste material Substances 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 8
- 238000005259 measurement Methods 0.000 claims description 6
- 230000001172 regenerating effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000012467 final product Substances 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims 6
- 239000002245 particle Substances 0.000 claims 3
- 239000000463 material Substances 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 239000004677 Nylon Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000003513 alkali Substances 0.000 claims 1
- 239000011324 bead Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920001778 nylon Polymers 0.000 claims 1
- 238000005507 spraying Methods 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009221793A JP5623722B2 (ja) | 2009-09-28 | 2009-09-28 | プラズマエッチング装置用シリコン製部品の再生方法 |
| KR1020100090529A KR101710592B1 (ko) | 2009-09-28 | 2010-09-15 | 플라즈마 에칭 장치용 실리콘제 부품의 재생 방법 및 플라즈마 에칭 장치용 실리콘제 부품 |
| CN2010102873413A CN102034700B (zh) | 2009-09-28 | 2010-09-17 | 等离子蚀刻装置用硅制零件及其再生方法 |
| US12/888,566 US8785214B2 (en) | 2009-09-28 | 2010-09-23 | Method of recycling silicon component for plasma etching apparatus and silicon component for plasma etching apparatus |
| TW099132505A TWI525695B (zh) | 2009-09-28 | 2010-09-27 | A method for regenerating a silicon member for a plasma etching apparatus, a silicon member for a plasma etching apparatus, a silicon focusing ring, and a silicon electrode plate |
| US14/306,445 US9290391B2 (en) | 2009-09-28 | 2014-06-17 | Silicon component for plasma etching apparatus |
| US15/016,474 US9399584B2 (en) | 2009-09-28 | 2016-02-05 | Silicon focus ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009221793A JP5623722B2 (ja) | 2009-09-28 | 2009-09-28 | プラズマエッチング装置用シリコン製部品の再生方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011071361A JP2011071361A (ja) | 2011-04-07 |
| JP2011071361A5 true JP2011071361A5 (https=) | 2012-11-08 |
| JP5623722B2 JP5623722B2 (ja) | 2014-11-12 |
Family
ID=43780621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009221793A Expired - Fee Related JP5623722B2 (ja) | 2009-09-28 | 2009-09-28 | プラズマエッチング装置用シリコン製部品の再生方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US8785214B2 (https=) |
| JP (1) | JP5623722B2 (https=) |
| KR (1) | KR101710592B1 (https=) |
| CN (1) | CN102034700B (https=) |
| TW (1) | TWI525695B (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5623722B2 (ja) * | 2009-09-28 | 2014-11-12 | 東京エレクトロン株式会社 | プラズマエッチング装置用シリコン製部品の再生方法 |
| JP2013016532A (ja) * | 2011-06-30 | 2013-01-24 | Tokyo Electron Ltd | シリコン製部品の製造方法及びエッチング処理装置用のシリコン製部品 |
| CN108295893A (zh) * | 2011-07-27 | 2018-07-20 | 庄信万丰股份有限公司 | 低磷菱沸石 |
| CN103406344B (zh) * | 2013-08-28 | 2015-04-08 | 河北宁晋松宫半导体有限公司 | 一种线切碎硅片杂质的处理方法 |
| US11393663B2 (en) * | 2019-02-25 | 2022-07-19 | Tokyo Electron Limited | Methods and systems for focus ring thickness determinations and feedback control |
| CN114373836A (zh) * | 2021-12-29 | 2022-04-19 | 南通同方半导体有限公司 | 一种蓝宝石衬底的回收方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU4302893A (en) * | 1992-06-01 | 1993-12-30 | Ice Blast International Ltd. | Particle blasting utilizing crystalline ice |
| US5366585A (en) * | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
| JPH08236505A (ja) * | 1995-02-28 | 1996-09-13 | Sumitomo Sitix Corp | プラズマエッチング装置用シリコン電極 |
| JPH104083A (ja) * | 1996-06-17 | 1998-01-06 | Kyocera Corp | 半導体製造用耐食性部材 |
| JPH11191555A (ja) * | 1997-12-26 | 1999-07-13 | Gunze Ltd | プラズマｃｖｄ装置 |
| KR101005983B1 (ko) * | 2000-12-12 | 2011-01-05 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치의 재생 방법, 플라즈마 처리 용기의 내부 부재의 재생 방법, 및 플라즈마 처리 장치 |
| JP4456769B2 (ja) * | 2001-02-02 | 2010-04-28 | 川崎マイクロエレクトロニクス株式会社 | フロロカーボン系プラズマ生成用シリコン製電極の洗浄方法およびこれを利用した半導体装置の製造方法 |
| CN1436862A (zh) * | 2002-02-08 | 2003-08-20 | 王启振 | 高强度钢性球铁的制造方法 |
| JP2004079983A (ja) | 2002-08-20 | 2004-03-11 | Creative Technology:Kk | シリコンフォーカスリングの再生使用方法 |
| JP4391808B2 (ja) | 2003-12-01 | 2009-12-24 | シャープ株式会社 | 太陽電池用シリコンウエハの再生方法、太陽電池セルの形成方法及び太陽電池用シリコンインゴットの作製方法 |
| US8058186B2 (en) * | 2004-11-10 | 2011-11-15 | Tokyo Electron Limited | Components for substrate processing apparatus and manufacturing method thereof |
| JP4689373B2 (ja) * | 2005-07-04 | 2011-05-25 | シャープ株式会社 | シリコンの再利用方法 |
| JP2007273707A (ja) * | 2006-03-31 | 2007-10-18 | Mitsubishi Materials Corp | ウエハとほぼ同じ寸法のシリコン電極板を用いてウエハ表面を均一にプラズマエッチングする方法。 |
| JP2008308345A (ja) * | 2007-06-12 | 2008-12-25 | Sanyo Electric Co Ltd | 半導体材料の再生装置、太陽電池の製造方法および製造装置 |
| JP2009215135A (ja) * | 2008-03-12 | 2009-09-24 | Sharp Corp | シリコン単結晶インゴットの製造方法 |
| JP5623722B2 (ja) * | 2009-09-28 | 2014-11-12 | 東京エレクトロン株式会社 | プラズマエッチング装置用シリコン製部品の再生方法 |
| US8357263B2 (en) * | 2010-10-05 | 2013-01-22 | Skyworks Solutions, Inc. | Apparatus and methods for electrical measurements in a plasma etcher |
-
2009
- 2009-09-28 JP JP2009221793A patent/JP5623722B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-15 KR KR1020100090529A patent/KR101710592B1/ko not_active Expired - Fee Related
- 2010-09-17 CN CN2010102873413A patent/CN102034700B/zh not_active Expired - Fee Related
- 2010-09-23 US US12/888,566 patent/US8785214B2/en not_active Expired - Fee Related
- 2010-09-27 TW TW099132505A patent/TWI525695B/zh not_active IP Right Cessation
-
2014
- 2014-06-17 US US14/306,445 patent/US9290391B2/en active Active
-
2016
- 2016-02-05 US US15/016,474 patent/US9399584B2/en active Active
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