CN102034700B - 等离子蚀刻装置用硅制零件及其再生方法 - Google Patents

等离子蚀刻装置用硅制零件及其再生方法 Download PDF

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Publication number
CN102034700B
CN102034700B CN2010102873413A CN201010287341A CN102034700B CN 102034700 B CN102034700 B CN 102034700B CN 2010102873413 A CN2010102873413 A CN 2010102873413A CN 201010287341 A CN201010287341 A CN 201010287341A CN 102034700 B CN102034700 B CN 102034700B
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China
Prior art keywords
silicon
plasma etching
etching apparatus
input amount
waste
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Expired - Fee Related
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CN2010102873413A
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English (en)
Chinese (zh)
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CN102034700A (zh
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今福光祐
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN2010102873413A 2009-09-28 2010-09-17 等离子蚀刻装置用硅制零件及其再生方法 Expired - Fee Related CN102034700B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-221793 2009-09-28
JP2009221793A JP5623722B2 (ja) 2009-09-28 2009-09-28 プラズマエッチング装置用シリコン製部品の再生方法

Publications (2)

Publication Number Publication Date
CN102034700A CN102034700A (zh) 2011-04-27
CN102034700B true CN102034700B (zh) 2013-08-14

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CN2010102873413A Expired - Fee Related CN102034700B (zh) 2009-09-28 2010-09-17 等离子蚀刻装置用硅制零件及其再生方法

Country Status (5)

Country Link
US (3) US8785214B2 (https=)
JP (1) JP5623722B2 (https=)
KR (1) KR101710592B1 (https=)
CN (1) CN102034700B (https=)
TW (1) TWI525695B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5623722B2 (ja) * 2009-09-28 2014-11-12 東京エレクトロン株式会社 プラズマエッチング装置用シリコン製部品の再生方法
JP2013016532A (ja) * 2011-06-30 2013-01-24 Tokyo Electron Ltd シリコン製部品の製造方法及びエッチング処理装置用のシリコン製部品
CN108295893A (zh) * 2011-07-27 2018-07-20 庄信万丰股份有限公司 低磷菱沸石
CN103406344B (zh) * 2013-08-28 2015-04-08 河北宁晋松宫半导体有限公司 一种线切碎硅片杂质的处理方法
US11393663B2 (en) * 2019-02-25 2022-07-19 Tokyo Electron Limited Methods and systems for focus ring thickness determinations and feedback control
CN114373836A (zh) * 2021-12-29 2022-04-19 南通同方半导体有限公司 一种蓝宝石衬底的回收方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
US5367838A (en) * 1992-06-01 1994-11-29 Ice Blast International, Inc. Particle blasting using crystalline ice
CN1436862A (zh) * 2002-02-08 2003-08-20 王启振 高强度钢性球铁的制造方法
CN1479801A (zh) * 2000-12-12 2004-03-03 ���������ƴ���ʽ���� 等离子体处理容器的再生方法、等离子体处理容器内部部件、等离子体处理容器内部部件的制造方法以及等离子体处理装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236505A (ja) * 1995-02-28 1996-09-13 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
JPH11191555A (ja) * 1997-12-26 1999-07-13 Gunze Ltd プラズマｃｖｄ装置
JP4456769B2 (ja) * 2001-02-02 2010-04-28 川崎マイクロエレクトロニクス株式会社 フロロカーボン系プラズマ生成用シリコン製電極の洗浄方法およびこれを利用した半導体装置の製造方法
JP2004079983A (ja) 2002-08-20 2004-03-11 Creative Technology:Kk シリコンフォーカスリングの再生使用方法
JP4391808B2 (ja) 2003-12-01 2009-12-24 シャープ株式会社 太陽電池用シリコンウエハの再生方法、太陽電池セルの形成方法及び太陽電池用シリコンインゴットの作製方法
US8058186B2 (en) * 2004-11-10 2011-11-15 Tokyo Electron Limited Components for substrate processing apparatus and manufacturing method thereof
JP4689373B2 (ja) * 2005-07-04 2011-05-25 シャープ株式会社 シリコンの再利用方法
JP2007273707A (ja) * 2006-03-31 2007-10-18 Mitsubishi Materials Corp ウエハとほぼ同じ寸法のシリコン電極板を用いてウエハ表面を均一にプラズマエッチングする方法。
JP2008308345A (ja) * 2007-06-12 2008-12-25 Sanyo Electric Co Ltd 半導体材料の再生装置、太陽電池の製造方法および製造装置
JP2009215135A (ja) * 2008-03-12 2009-09-24 Sharp Corp シリコン単結晶インゴットの製造方法
JP5623722B2 (ja) * 2009-09-28 2014-11-12 東京エレクトロン株式会社 プラズマエッチング装置用シリコン製部品の再生方法
US8357263B2 (en) * 2010-10-05 2013-01-22 Skyworks Solutions, Inc. Apparatus and methods for electrical measurements in a plasma etcher

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367838A (en) * 1992-06-01 1994-11-29 Ice Blast International, Inc. Particle blasting using crystalline ice
US5366585A (en) * 1993-01-28 1994-11-22 Applied Materials, Inc. Method and apparatus for protection of conductive surfaces in a plasma processing reactor
CN1479801A (zh) * 2000-12-12 2004-03-03 ���������ƴ���ʽ���� 等离子体处理容器的再生方法、等离子体处理容器内部部件、等离子体处理容器内部部件的制造方法以及等离子体处理装置
CN1436862A (zh) * 2002-02-08 2003-08-20 王启振 高强度钢性球铁的制造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开平10－4083A 1998.01.06
JP特开平11－191555A 1999.07.13

Also Published As

Publication number Publication date
JP5623722B2 (ja) 2014-11-12
JP2011071361A (ja) 2011-04-07
US9290391B2 (en) 2016-03-22
US9399584B2 (en) 2016-07-26
TW201131641A (en) 2011-09-16
US20160152479A1 (en) 2016-06-02
US20140294712A1 (en) 2014-10-02
CN102034700A (zh) 2011-04-27
TWI525695B (zh) 2016-03-11
US8785214B2 (en) 2014-07-22
US20110076221A1 (en) 2011-03-31
KR20110034550A (ko) 2011-04-05
KR101710592B1 (ko) 2017-02-27

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