JP2011071243A5 - - Google Patents

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Publication number
JP2011071243A5
JP2011071243A5 JP2009219781A JP2009219781A JP2011071243A5 JP 2011071243 A5 JP2011071243 A5 JP 2011071243A5 JP 2009219781 A JP2009219781 A JP 2009219781A JP 2009219781 A JP2009219781 A JP 2009219781A JP 2011071243 A5 JP2011071243 A5 JP 2011071243A5
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JP
Japan
Prior art keywords
insulating film
gate insulating
relatively thick
region
thick gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009219781A
Other languages
English (en)
Japanese (ja)
Other versions
JP5449942B2 (ja
JP2011071243A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009219781A priority Critical patent/JP5449942B2/ja
Priority claimed from JP2009219781A external-priority patent/JP5449942B2/ja
Priority to US12/887,846 priority patent/US8541279B2/en
Publication of JP2011071243A publication Critical patent/JP2011071243A/ja
Publication of JP2011071243A5 publication Critical patent/JP2011071243A5/ja
Priority to US13/966,476 priority patent/US8975710B2/en
Application granted granted Critical
Publication of JP5449942B2 publication Critical patent/JP5449942B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009219781A 2009-09-24 2009-09-24 半導体装置およびその製造方法 Expired - Fee Related JP5449942B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009219781A JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法
US12/887,846 US8541279B2 (en) 2009-09-24 2010-09-22 Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors
US13/966,476 US8975710B2 (en) 2009-09-24 2013-08-14 Semiconductor device having a thick gate insulating film covering bird's beak region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009219781A JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2011071243A JP2011071243A (ja) 2011-04-07
JP2011071243A5 true JP2011071243A5 (enExample) 2012-08-30
JP5449942B2 JP5449942B2 (ja) 2014-03-19

Family

ID=43755886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009219781A Expired - Fee Related JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法

Country Status (2)

Country Link
US (2) US8541279B2 (enExample)
JP (1) JP5449942B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6595872B2 (ja) * 2015-02-25 2019-10-23 エイブリック株式会社 半導体集積回路装置およびその製造方法
US9698147B2 (en) * 2015-02-25 2017-07-04 Sii Semiconductor Corporation Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100450A (ja) 1981-12-10 1983-06-15 Matsushita Electronics Corp 半導体装置およびその製造方法
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
JPH01110761A (ja) 1987-10-23 1989-04-27 Nec Corp 半導体装置の製造方法
JPH03231456A (ja) 1990-02-07 1991-10-15 Matsushita Electron Corp 半導体装置の製造方法
JP3107582B2 (ja) * 1991-03-26 2000-11-13 沖電気工業株式会社 半導体装置の製造方法
JP3119902B2 (ja) * 1991-07-16 2000-12-25 三菱電機株式会社 半導体装置およびその製造方法
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
JPH06252165A (ja) * 1993-02-25 1994-09-09 Sharp Corp 半導体装置
JPH08293598A (ja) * 1995-04-21 1996-11-05 Seiko Instr Inc 半導体装置とその製造方法
US6498376B1 (en) * 1994-06-03 2002-12-24 Seiko Instruments Inc Semiconductor device and manufacturing method thereof
TW367577B (en) * 1997-12-30 1999-08-21 United Microelectronics Corp Manufacturing method for mixed components
JP2001110909A (ja) * 1999-10-12 2001-04-20 Sony Corp 半導体装置の製造方法
JP2002026140A (ja) * 2000-07-10 2002-01-25 Nec Corp 半導体装置及びその製造方法
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
JP2003309188A (ja) * 2002-04-15 2003-10-31 Nec Corp 半導体装置およびその製造方法
JP2004228336A (ja) * 2003-01-23 2004-08-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2006278633A (ja) * 2005-03-29 2006-10-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4413809B2 (ja) * 2005-03-29 2010-02-10 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP5080032B2 (ja) * 2006-06-27 2012-11-21 セイコーインスツル株式会社 半導体集積回路装置
JP2010027688A (ja) * 2008-07-15 2010-02-04 Toshiba Corp 半導体装置の製造方法

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