JP5449942B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5449942B2
JP5449942B2 JP2009219781A JP2009219781A JP5449942B2 JP 5449942 B2 JP5449942 B2 JP 5449942B2 JP 2009219781 A JP2009219781 A JP 2009219781A JP 2009219781 A JP2009219781 A JP 2009219781A JP 5449942 B2 JP5449942 B2 JP 5449942B2
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JP
Japan
Prior art keywords
insulating film
gate insulating
region
film
relatively thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009219781A
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English (en)
Japanese (ja)
Other versions
JP2011071243A (ja
JP2011071243A5 (enExample
Inventor
裕一郎 北島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009219781A priority Critical patent/JP5449942B2/ja
Priority to US12/887,846 priority patent/US8541279B2/en
Publication of JP2011071243A publication Critical patent/JP2011071243A/ja
Publication of JP2011071243A5 publication Critical patent/JP2011071243A5/ja
Priority to US13/966,476 priority patent/US8975710B2/en
Application granted granted Critical
Publication of JP5449942B2 publication Critical patent/JP5449942B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
JP2009219781A 2009-09-24 2009-09-24 半導体装置およびその製造方法 Expired - Fee Related JP5449942B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009219781A JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法
US12/887,846 US8541279B2 (en) 2009-09-24 2010-09-22 Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors
US13/966,476 US8975710B2 (en) 2009-09-24 2013-08-14 Semiconductor device having a thick gate insulating film covering bird's beak region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009219781A JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法

Publications (3)

Publication Number Publication Date
JP2011071243A JP2011071243A (ja) 2011-04-07
JP2011071243A5 JP2011071243A5 (enExample) 2012-08-30
JP5449942B2 true JP5449942B2 (ja) 2014-03-19

Family

ID=43755886

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009219781A Expired - Fee Related JP5449942B2 (ja) 2009-09-24 2009-09-24 半導体装置およびその製造方法

Country Status (2)

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US (2) US8541279B2 (enExample)
JP (1) JP5449942B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9698147B2 (en) * 2015-02-25 2017-07-04 Sii Semiconductor Corporation Semiconductor integrated circuit device having low and high withstanding-voltage MOS transistors
JP6595872B2 (ja) * 2015-02-25 2019-10-23 エイブリック株式会社 半導体集積回路装置およびその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100450A (ja) 1981-12-10 1983-06-15 Matsushita Electronics Corp 半導体装置およびその製造方法
US4591890A (en) * 1982-12-20 1986-05-27 Motorola Inc. Radiation hard MOS devices and methods for the manufacture thereof
JPH01110761A (ja) 1987-10-23 1989-04-27 Nec Corp 半導体装置の製造方法
JPH03231456A (ja) 1990-02-07 1991-10-15 Matsushita Electron Corp 半導体装置の製造方法
JP3107582B2 (ja) * 1991-03-26 2000-11-13 沖電気工業株式会社 半導体装置の製造方法
JP3119902B2 (ja) * 1991-07-16 2000-12-25 三菱電機株式会社 半導体装置およびその製造方法
IT1254799B (it) * 1992-02-18 1995-10-11 St Microelectronics Srl Transistore vdmos con migliorate caratteristiche di tenuta di tensione.
JPH06252165A (ja) * 1993-02-25 1994-09-09 Sharp Corp 半導体装置
JPH08293598A (ja) * 1995-04-21 1996-11-05 Seiko Instr Inc 半導体装置とその製造方法
US6498376B1 (en) * 1994-06-03 2002-12-24 Seiko Instruments Inc Semiconductor device and manufacturing method thereof
TW367577B (en) * 1997-12-30 1999-08-21 United Microelectronics Corp Manufacturing method for mixed components
JP2001110909A (ja) * 1999-10-12 2001-04-20 Sony Corp 半導体装置の製造方法
JP2002026140A (ja) * 2000-07-10 2002-01-25 Nec Corp 半導体装置及びその製造方法
JP2002222942A (ja) * 2001-01-25 2002-08-09 Nec Corp 半導体装置およびその製造方法
JP2003309188A (ja) * 2002-04-15 2003-10-31 Nec Corp 半導体装置およびその製造方法
JP2004228336A (ja) * 2003-01-23 2004-08-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2006278633A (ja) * 2005-03-29 2006-10-12 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP4413809B2 (ja) * 2005-03-29 2010-02-10 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP5080032B2 (ja) * 2006-06-27 2012-11-21 セイコーインスツル株式会社 半導体集積回路装置
JP2010027688A (ja) * 2008-07-15 2010-02-04 Toshiba Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20110068412A1 (en) 2011-03-24
US20130328128A1 (en) 2013-12-12
US8975710B2 (en) 2015-03-10
JP2011071243A (ja) 2011-04-07
US8541279B2 (en) 2013-09-24

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