JP2011060967A - 照明装置 - Google Patents
照明装置 Download PDFInfo
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- JP2011060967A JP2011060967A JP2009208431A JP2009208431A JP2011060967A JP 2011060967 A JP2011060967 A JP 2011060967A JP 2009208431 A JP2009208431 A JP 2009208431A JP 2009208431 A JP2009208431 A JP 2009208431A JP 2011060967 A JP2011060967 A JP 2011060967A
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- light
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- emitting diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】実装基板10上に、複数のLEDチップ20を互いに離隔して実装し、LEDチップ20の周囲及びLEDチップ20同士の間隙部分に、蛍光体部30を配設した。そして、この蛍光体部30のうちでLEDチップ20間の間隙を覆う部位に、溝部41を設けた。これにより、LEDチップ20から放射される光が蛍光体部30の外部に放射されるまでの光路長が、光の放射方向によらずに略等しくなる。従って、蛍光体部30によって異なる色に変換された光と変換されていない光の比率が、場所によらず略均一となるので、色むらを抑制することができる。また、LEDチップ20の周囲を蛍光体部30で隙間なく覆っているので、LEDチップ20の側面から放射される光も、蛍光体で異なる色に変換されるなどして発光に寄与する。よって、高い発光効率を得ることができる。
【選択図】図1
Description
本発明の第1の実施形態を、図1〜図3を参照して説明する。なお以下の説明では、図1における上下を上下方向と規定する。
本発明の第2の実施形態を、図4を参照して説明する。本実施形態は、溝部42の深さDを、LEDチップ20上部の蛍光体部30の厚さTよりも深く形成した以外の構成は、上記実施形態1と同様であるので、共通の構成要素については同一の符号を付して説明を省略する。
本発明の第3の実施形態を、図5を参照して説明する。本実施形態は、蛍光体部30の断面形状が、LEDチップ20の配光分布70と略等しくなるように当該蛍光体部30を形成した以外の構成は、上記実施形態1又は2と同様であるので、共通の構成要素については同一の符号を付して説明を省略する。
20 LEDチップ
30 蛍光体部
40 傾斜面
41 溝部
Claims (3)
- 実装基板と、この実装基板上に互いに離隔して実装された複数の発光ダイオードチップと、この発光ダイオードチップから放射された光を、この光とは異なる色の光に変換する蛍光体を透光性材料に含有させてなる蛍光体部とを備え、
前記蛍光体部は、前記発光ダイオードチップの面のうちで前記実装基板に実装される面以外のすべての面を、当該発光ダイオードチップとの間に隙間が生じないように覆うとともに、これら発光ダイオードチップ同士の間に形成された間隙を、前記実装基板との間に隙間が生じないように覆ってなり、さらに、この間隙を覆う当該蛍光体部の表面に、当該間隙を形成する前記発光ダイオードチップの端面に沿った溝部を設けたことを特徴とする照明装置。 - 前記溝部の最深部と前記実装基板との距離を、前記発光ダイオードチップの面のうちで前記実装基板から最も離れた面と当該実装基板との距離よりも、近くしたことを特徴とする請求項1記載の照明装置。
- 前記蛍光体部の断面形状が、前記発光ダイオードチップからの出射光の配光分布と略等しくなるように、当該蛍光体部を形成したことを特徴とする請求項1または2記載の照明装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009208431A JP5379615B2 (ja) | 2009-09-09 | 2009-09-09 | 照明装置 |
EP10175632.8A EP2296179A3 (en) | 2009-09-09 | 2010-09-07 | Illumination device |
EP15179493.0A EP2955752A1 (en) | 2009-09-09 | 2010-09-07 | Illumination device |
CN2010102760773A CN102024805A (zh) | 2009-09-09 | 2010-09-07 | 照明装置 |
US12/878,168 US9099333B2 (en) | 2009-09-09 | 2010-09-09 | LED lamp device having a fluorescent element shaped for uniform light conversion |
US14/795,439 US9991236B2 (en) | 2009-09-09 | 2015-07-09 | LED lamp device having a fluorescent element shaped for uniform light conversion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009208431A JP5379615B2 (ja) | 2009-09-09 | 2009-09-09 | 照明装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011060967A true JP2011060967A (ja) | 2011-03-24 |
JP5379615B2 JP5379615B2 (ja) | 2013-12-25 |
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Family Applications (1)
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JP2009208431A Active JP5379615B2 (ja) | 2009-09-09 | 2009-09-09 | 照明装置 |
Country Status (4)
Country | Link |
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US (2) | US9099333B2 (ja) |
EP (2) | EP2955752A1 (ja) |
JP (1) | JP5379615B2 (ja) |
CN (1) | CN102024805A (ja) |
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JP2016071271A (ja) * | 2014-10-01 | 2016-05-09 | コニカミノルタ株式会社 | 照明用発光装置および画像読取装置 |
JP2017536704A (ja) * | 2014-12-04 | 2017-12-07 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス半導体デバイスおよびオプトエレクトロニクス半導体デバイスの製造方法 |
JP2018152463A (ja) * | 2017-03-13 | 2018-09-27 | スタンレー電気株式会社 | 半導体発光装置 |
JP2018195778A (ja) * | 2017-05-22 | 2018-12-06 | シチズン電子株式会社 | 発光装置 |
KR20200038488A (ko) * | 2017-08-03 | 2020-04-13 | 크리,인코포레이티드 | 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법 |
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JP2018195778A (ja) * | 2017-05-22 | 2018-12-06 | シチズン電子株式会社 | 発光装置 |
KR20200038488A (ko) * | 2017-08-03 | 2020-04-13 | 크리,인코포레이티드 | 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법 |
JP2020529738A (ja) * | 2017-08-03 | 2020-10-08 | クリー インコーポレイテッドCree Inc. | 高密度ピクセル化ledチップ、チップアレイデバイス、及びその製造方法 |
JP7290001B2 (ja) | 2017-08-03 | 2023-06-13 | クリーエルイーディー・インコーポレーテッド | 高密度ピクセル化ledチップ、チップアレイデバイス、及びその製造方法 |
KR102601620B1 (ko) * | 2017-08-03 | 2023-11-15 | 크리엘이디, 인크. | 고밀도 픽셀화된 led 칩 및 칩 어레이 장치, 그리고 그 제조 방법 |
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EP2955752A1 (en) | 2015-12-16 |
US9991236B2 (en) | 2018-06-05 |
JP5379615B2 (ja) | 2013-12-25 |
US20110058369A1 (en) | 2011-03-10 |
US9099333B2 (en) | 2015-08-04 |
EP2296179A2 (en) | 2011-03-16 |
EP2296179A3 (en) | 2014-03-26 |
CN102024805A (zh) | 2011-04-20 |
US20160005719A1 (en) | 2016-01-07 |
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