JP2010539710A5 - - Google Patents

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JP2010539710A5
JP2010539710A5 JP2010524955A JP2010524955A JP2010539710A5 JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5 JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5
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methylcyclopentadienyl
precursor
propylcyclopentadienyl
ethylcyclopentadienyl
otbu
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JP2010524955A
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JP2010539710A (ja
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Priority claimed from PCT/US2008/075831 external-priority patent/WO2009036046A1/en
Publication of JP2010539710A publication Critical patent/JP2010539710A/ja
Publication of JP2010539710A5 publication Critical patent/JP2010539710A5/ja
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JP2010524955A 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 Pending JP2010539710A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97245107P 2007-09-14 2007-09-14
PCT/US2008/075831 WO2009036046A1 (en) 2007-09-14 2008-09-10 Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors

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JP2010539710A JP2010539710A (ja) 2010-12-16
JP2010539710A5 true JP2010539710A5 (enExample) 2011-10-27

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JP2010524955A Pending JP2010539710A (ja) 2007-09-14 2008-09-10 ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法

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US (1) US8039062B2 (enExample)
EP (1) EP2191034B1 (enExample)
JP (1) JP2010539710A (enExample)
KR (2) KR20100072021A (enExample)
CN (2) CN103147062A (enExample)
TW (1) TWI464290B (enExample)
WO (1) WO2009036046A1 (enExample)

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KR101560755B1 (ko) * 2007-09-14 2015-10-15 시그마 알드리치 컴퍼니 엘엘씨 모노시클로펜타디에닐 티타늄계 전구체를 이용한 원자층 증착에 의한 티타늄 함유 박막의 제조 방법
KR20100072021A (ko) 2007-09-14 2010-06-29 시그마-알드리치컴퍼니 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법
CN101959897A (zh) 2008-02-27 2011-01-26 乔治洛德方法研究和开发液化空气有限公司 使用原子层沉积(ald)法在基底上形成含钛层的方法

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