JP2010539710A5 - - Google Patents
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- Publication number
- JP2010539710A5 JP2010539710A5 JP2010524955A JP2010524955A JP2010539710A5 JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5 JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010524955 A JP2010524955 A JP 2010524955A JP 2010539710 A5 JP2010539710 A5 JP 2010539710A5
- Authority
- JP
- Japan
- Prior art keywords
- methylcyclopentadienyl
- precursor
- propylcyclopentadienyl
- ethylcyclopentadienyl
- otbu
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- -1 methoxy, ethoxy, propoxy Chemical group 0.000 claims 33
- 238000000034 method Methods 0.000 claims 26
- 239000002243 precursor Substances 0.000 claims 12
- 229910052735 hafnium Inorganic materials 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 8
- 229910052726 zirconium Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 7
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims 6
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000003570 air Substances 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims 1
- 229910000085 borane Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 150000002429 hydrazines Chemical class 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 229910052747 lanthanoid Inorganic materials 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97245107P | 2007-09-14 | 2007-09-14 | |
| PCT/US2008/075831 WO2009036046A1 (en) | 2007-09-14 | 2008-09-10 | Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010539710A JP2010539710A (ja) | 2010-12-16 |
| JP2010539710A5 true JP2010539710A5 (enExample) | 2011-10-27 |
Family
ID=40070699
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010524955A Pending JP2010539710A (ja) | 2007-09-14 | 2008-09-10 | ハフニウム系前駆体およびジルコニウム系前駆体を用いる原子層成長による薄膜の作製方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8039062B2 (enExample) |
| EP (1) | EP2191034B1 (enExample) |
| JP (1) | JP2010539710A (enExample) |
| KR (2) | KR20150139628A (enExample) |
| CN (2) | CN101815807B (enExample) |
| TW (1) | TWI464290B (enExample) |
| WO (1) | WO2009036046A1 (enExample) |
Families Citing this family (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2432363B (en) * | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| EP2049705A4 (en) * | 2006-07-20 | 2014-10-29 | Linde Inc | IMPROVED METHODS FOR DEPOSITION OF ATOMIC LAYERS |
| US8795771B2 (en) | 2006-10-27 | 2014-08-05 | Sean T. Barry | ALD of metal-containing films using cyclopentadienyl compounds |
| TWI382987B (zh) | 2007-07-24 | 2013-01-21 | Sigma Aldrich Co | 應用於化學相沉積製程的有機金屬前驅物 |
| TWI425110B (zh) | 2007-07-24 | 2014-02-01 | Sigma Aldrich Co | 以化學相沉積法製造含金屬薄膜之方法 |
| KR20150139628A (ko) | 2007-09-14 | 2015-12-11 | 시그마 알드리치 컴퍼니 엘엘씨 | 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 |
| JP2010539709A (ja) | 2007-09-14 | 2010-12-16 | シグマ−アルドリッチ・カンパニー | モノシクロペンタジエニルチタン系前駆体を用いる原子層成長によるチタン含有薄膜の作製方法 |
| US8853075B2 (en) | 2008-02-27 | 2014-10-07 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process |
| TW200949939A (en) * | 2008-05-23 | 2009-12-01 | Sigma Aldrich Co | High-k dielectric films and methods of producing using titanium-based β -diketonate precursors |
| TWI467045B (zh) * | 2008-05-23 | 2015-01-01 | Sigma Aldrich Co | 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法 |
| US20100290968A1 (en) * | 2009-05-13 | 2010-11-18 | Ce Ma | Solution based lanthanide and group iii precursors for atomic layer deposition |
| EP2451819A4 (en) * | 2009-07-06 | 2013-03-06 | Linde Ag | SOLUTION-BASED PRECURSORS |
| US9028917B2 (en) | 2009-08-07 | 2015-05-12 | Sigma-Aldrich Co. Llc | High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films |
| US9045509B2 (en) | 2009-08-14 | 2015-06-02 | American Air Liquide, Inc. | Hafnium- and zirconium-containing precursors and methods of using the same |
| US8592606B2 (en) * | 2009-12-07 | 2013-11-26 | Air Products And Chemicals, Inc. | Liquid precursor for depositing group 4 metal containing films |
| TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Ａｓｍ國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
| WO2012027575A1 (en) | 2010-08-27 | 2012-03-01 | Sigma-Aldrich Co. Llc | Molybdenum (iv) amide precursors and use thereof in atomic layer deposition |
| US8946096B2 (en) | 2011-03-15 | 2015-02-03 | Mecharonics Co. Ltd. | Group IV-B organometallic compound, and method for preparing same |
| KR101263454B1 (ko) | 2011-03-15 | 2013-11-27 | 주식회사 메카로닉스 | 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법 |
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| JP5675458B2 (ja) * | 2011-03-25 | 2015-02-25 | 東京エレクトロン株式会社 | 成膜方法、成膜装置および記憶媒体 |
| JP5732962B2 (ja) * | 2011-03-28 | 2015-06-10 | 宇部興産株式会社 | ジルコニウムアミド化合物の製造方法 |
| US8927748B2 (en) | 2011-08-12 | 2015-01-06 | Sigma-Aldrich Co. Llc | Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films |
| US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
| US9175023B2 (en) | 2012-01-26 | 2015-11-03 | Sigma-Aldrich Co. Llc | Molybdenum allyl complexes and use thereof in thin film deposition |
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| KR101569447B1 (ko) | 2014-04-29 | 2015-11-16 | (주)디엔에프 | 지르코늄 산화물 박막 형성용 전구체 화합물, 이의 제조방법 및 이를 이용한 박막의 제조방법 |
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| KR101806987B1 (ko) * | 2016-02-03 | 2017-12-08 | 주식회사 유피케미칼 | 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법 |
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Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07107190B2 (ja) | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
| JPH02167334A (ja) * | 1988-09-05 | 1990-06-27 | Idemitsu Kosan Co Ltd | 重合体の製造法 |
| JP2908819B2 (ja) * | 1989-09-21 | 1999-06-21 | 出光興産株式会社 | アリールスチレン系重合体およびその製造方法 |
| US5393564A (en) | 1993-05-14 | 1995-02-28 | Micron Semiconductor, Inc. | High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor |
| ES2139119T3 (es) | 1995-07-12 | 2000-02-01 | Witco Gmbh | Procedimiento para la preparacion de derivados de ciclopentadienil-titanio-trialcoxi. |
| US7192892B2 (en) * | 2003-03-04 | 2007-03-20 | Micron Technology, Inc. | Atomic layer deposited dielectric layers |
| US20040198069A1 (en) * | 2003-04-04 | 2004-10-07 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| JP2005171291A (ja) | 2003-12-09 | 2005-06-30 | Tosoh Corp | チタン含有薄膜およびその製造方法 |
| JP4610487B2 (ja) | 2003-12-25 | 2011-01-12 | 株式会社Ａｄｅｋａ | 金属化合物、薄膜形成用原料及び薄膜の製造方法 |
| US7091129B2 (en) * | 2003-12-30 | 2006-08-15 | Intel Corporation | Atomic layer deposition using photo-enhanced bond reconfiguration |
| US7514119B2 (en) * | 2005-04-29 | 2009-04-07 | Linde, Inc. | Method and apparatus for using solution based precursors for atomic layer deposition |
| KR100716652B1 (ko) * | 2005-04-30 | 2007-05-09 | 주식회사 하이닉스반도체 | 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법 |
| GB2432363B (en) | 2005-11-16 | 2010-06-23 | Epichem Ltd | Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition |
| JP5128289B2 (ja) * | 2005-12-06 | 2013-01-23 | 株式会社トリケミカル研究所 | ハフニウム系化合物、ハフニウム系薄膜形成材料、及びハフニウム系薄膜形成方法 |
| JP2009539237A (ja) * | 2006-06-02 | 2009-11-12 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 新規なチタン、ジルコニウムおよびハフニウム前駆体をベースとするｈｉｇｈ−ｋ誘電体フィルムを形成する方法および半導体製造におけるそれらの使用 |
| KR100852234B1 (ko) | 2006-11-17 | 2008-08-13 | 삼성전자주식회사 | 금속 산화막의 형성 방법, 이를 이용한 게이트 구조물의제조 방법 및 커패시터의 제조 방법 |
| US20080274615A1 (en) * | 2007-05-02 | 2008-11-06 | Vaartstra Brian A | Atomic Layer Deposition Methods, Methods of Forming Dielectric Materials, Methods of Forming Capacitors, And Methods of Forming DRAM Unit Cells |
| KR20080101040A (ko) | 2007-05-15 | 2008-11-21 | 주식회사 유피케미칼 | 금속 박막 또는 세라믹 박막 증착용 유기 금속 전구체화합물 및 이를 이용한 박막 증착 방법 |
| JP2010539709A (ja) | 2007-09-14 | 2010-12-16 | シグマ−アルドリッチ・カンパニー | モノシクロペンタジエニルチタン系前駆体を用いる原子層成長によるチタン含有薄膜の作製方法 |
| KR20150139628A (ko) | 2007-09-14 | 2015-12-11 | 시그마 알드리치 컴퍼니 엘엘씨 | 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법 |
| US8853075B2 (en) | 2008-02-27 | 2014-10-07 | L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process |
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2008
- 2008-09-10 KR KR1020157033746A patent/KR20150139628A/ko not_active Ceased
- 2008-09-10 CN CN2008801068593A patent/CN101815807B/zh active Active
- 2008-09-10 KR KR1020107008048A patent/KR20100072021A/ko not_active Ceased
- 2008-09-10 JP JP2010524955A patent/JP2010539710A/ja active Pending
- 2008-09-10 EP EP08799401A patent/EP2191034B1/en not_active Not-in-force
- 2008-09-10 WO PCT/US2008/075831 patent/WO2009036046A1/en not_active Ceased
- 2008-09-10 US US12/207,968 patent/US8039062B2/en active Active
- 2008-09-10 CN CN201110448392.4A patent/CN103147062A/zh active Pending
- 2008-09-11 TW TW097134790A patent/TWI464290B/zh active
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