TWI464290B - 利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 - Google Patents

利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 Download PDF

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Publication number
TWI464290B
TWI464290B TW097134790A TW97134790A TWI464290B TW I464290 B TWI464290 B TW I464290B TW 097134790 A TW097134790 A TW 097134790A TW 97134790 A TW97134790 A TW 97134790A TW I464290 B TWI464290 B TW I464290B
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group
zirconium
precursor
butoxy
atomic layer
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TW097134790A
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English (en)
Chinese (zh)
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TW200912024A (en
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Peter Nicholas Heys
Andrew Kingsley
Fuquan Song
Paul Williams
Thomas Leese
Hywel Owen Davies
Rajesh Odedra
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Sigma Aldrich Co
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523Pulsed gas flow or change of composition over time
    • C23C16/45525Atomic layer deposition [ALD]
    • C23C16/45553Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
TW097134790A 2007-09-14 2008-09-11 利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法 TWI464290B (zh)

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US97245107P 2007-09-14 2007-09-14

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TW200912024A TW200912024A (en) 2009-03-16
TWI464290B true TWI464290B (zh) 2014-12-11

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TW097134790A TWI464290B (zh) 2007-09-14 2008-09-11 利用含鉿與含鋯前驅物以原子層沉積製備薄膜之方法

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US (1) US8039062B2 (enExample)
EP (1) EP2191034B1 (enExample)
JP (1) JP2010539710A (enExample)
KR (2) KR20150139628A (enExample)
CN (2) CN101815807B (enExample)
TW (1) TWI464290B (enExample)
WO (1) WO2009036046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883111B (zh) * 2020-02-04 2025-05-11 德商馬克專利公司 選擇性形成含金屬膜之方法

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432363B (en) * 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
EP2049705A4 (en) * 2006-07-20 2014-10-29 Linde Inc IMPROVED METHODS FOR DEPOSITION OF ATOMIC LAYERS
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
TWI382987B (zh) 2007-07-24 2013-01-21 Sigma Aldrich Co 應用於化學相沉積製程的有機金屬前驅物
TWI425110B (zh) 2007-07-24 2014-02-01 Sigma Aldrich Co 以化學相沉積法製造含金屬薄膜之方法
KR20150139628A (ko) 2007-09-14 2015-12-11 시그마 알드리치 컴퍼니 엘엘씨 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법
JP2010539709A (ja) 2007-09-14 2010-12-16 シグマ−アルドリッチ・カンパニー モノシクロペンタジエニルチタン系前駆体を用いる原子層成長によるチタン含有薄膜の作製方法
US8853075B2 (en) 2008-02-27 2014-10-07 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process
TW200949939A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based β -diketonate precursors
TWI467045B (zh) * 2008-05-23 2015-01-01 Sigma Aldrich Co 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
EP2451819A4 (en) * 2009-07-06 2013-03-06 Linde Ag SOLUTION-BASED PRECURSORS
US9028917B2 (en) 2009-08-07 2015-05-12 Sigma-Aldrich Co. Llc High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
US9045509B2 (en) 2009-08-14 2015-06-02 American Air Liquide, Inc. Hafnium- and zirconium-containing precursors and methods of using the same
US8592606B2 (en) * 2009-12-07 2013-11-26 Air Products And Chemicals, Inc. Liquid precursor for depositing group 4 metal containing films
TWI529808B (zh) 2010-06-10 2016-04-11 Asm國際股份有限公司 使膜選擇性沈積於基板上的方法
WO2012027575A1 (en) 2010-08-27 2012-03-01 Sigma-Aldrich Co. Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
US8946096B2 (en) 2011-03-15 2015-02-03 Mecharonics Co. Ltd. Group IV-B organometallic compound, and method for preparing same
KR101263454B1 (ko) 2011-03-15 2013-11-27 주식회사 메카로닉스 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법
KR101395644B1 (ko) * 2012-02-08 2014-05-16 주식회사 메카로닉스 신규한 4-비이 족 금속 유기화합물 및 그 제조방법
JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
JP5732962B2 (ja) * 2011-03-28 2015-06-10 宇部興産株式会社 ジルコニウムアミド化合物の製造方法
US8927748B2 (en) 2011-08-12 2015-01-06 Sigma-Aldrich Co. Llc Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
US9175023B2 (en) 2012-01-26 2015-11-03 Sigma-Aldrich Co. Llc Molybdenum allyl complexes and use thereof in thin film deposition
WO2013157901A1 (ko) * 2012-04-20 2013-10-24 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물, 이의 제조 방법, 이를 포함하는 전구체 조성물, 및 이를 이용하는 박막의 증착 방법
WO2014168312A1 (ko) * 2013-04-08 2014-10-16 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물 및 이를 이용하는 박막의 증착 방법
TWI739285B (zh) 2014-02-04 2021-09-11 荷蘭商Asm Ip控股公司 金屬、金屬氧化物與介電質的選擇性沉積
KR102008445B1 (ko) * 2014-02-26 2019-08-08 주식회사 유진테크 머티리얼즈 지르코늄 함유막 형성용 전구체 조성물 및 이를 이용한 지르코늄 함유막 형성 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
KR101569447B1 (ko) 2014-04-29 2015-11-16 (주)디엔에프 지르코늄 산화물 박막 형성용 전구체 화합물, 이의 제조방법 및 이를 이용한 박막의 제조방법
US9663547B2 (en) * 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9499571B2 (en) * 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
KR102147190B1 (ko) * 2015-03-20 2020-08-25 에스케이하이닉스 주식회사 막형성조성물 및 그를 이용한 박막 제조 방법
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10343186B2 (en) 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
KR101806987B1 (ko) * 2016-02-03 2017-12-08 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
US9981286B2 (en) 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US10551741B2 (en) 2016-04-18 2020-02-04 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
KR20170123221A (ko) * 2016-04-28 2017-11-07 주식회사 유진테크 머티리얼즈 박막 증착 방법
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10337104B2 (en) 2016-12-30 2019-07-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10465289B2 (en) 2016-12-30 2019-11-05 L'Air Liquide, Société Anonyme pour l'Etude at l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US11094535B2 (en) 2017-02-14 2021-08-17 Asm Ip Holding B.V. Selective passivation and selective deposition
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
JP7183187B2 (ja) 2017-05-16 2022-12-05 エーエスエム アイピー ホールディング ビー.ブイ. 誘電体上の酸化物の選択的peald
JP6948159B2 (ja) * 2017-05-31 2021-10-13 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
CN111683953B (zh) * 2018-02-07 2024-01-23 Up化学株式会社 含第ⅳ族金属元素化合物、其制备方法、含其的膜形成用前体组合物及用其的膜形成方法
JP7346430B2 (ja) 2018-02-12 2023-09-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 無酸素共反応物を使用したルテニウムの蒸着方法
JP7146690B2 (ja) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー.ブイ. 堆積および除去を使用した選択的層形成
KR102080218B1 (ko) * 2018-08-27 2020-02-21 (주)원익머트리얼즈 이중치환 사이클로펜타디엔 화합물, 유기금속 화합물 및 그 제조방법
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー.ブイ. 選択的パッシベーションおよび選択的堆積
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
KR102471126B1 (ko) * 2019-02-01 2022-11-28 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
TWI865747B (zh) 2020-03-30 2024-12-11 荷蘭商Asm Ip私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Asm Ip私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Asm Ip私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
KR102562274B1 (ko) 2020-12-17 2023-08-01 주식회사 이지티엠 유기 금속 전구체 화합물
KR20220157741A (ko) * 2021-05-21 2022-11-29 주식회사 아이켐스 신규한 하프늄 함유 화합물, 이를 함유하는 하프늄 전구체 조성물, 상기 하프늄 전구체 조성물을 이용한 하프늄 함유 박막 및 이의 제조방법.
KR102574475B1 (ko) * 2022-05-13 2023-09-06 주식회사 유피케미칼 4족 금속 원소-함유 전구체 화합물을 포함하는 막 증착용 조성물, 및 이를 이용한 막 형성 방법
CN119948037A (zh) * 2022-09-02 2025-05-06 恩特格里斯公司 含有氟化烷氧化物和酰胺的前体
KR20250017860A (ko) * 2023-07-28 2025-02-04 에스케이트리켐 주식회사 금속-규소 함유 박막 형성용 전구체, 이를 이용한 박막 증착 방법, 및 상기 박막을 포함하는 반도체 소자.
CN117660926A (zh) * 2023-12-07 2024-03-08 江苏雅克科技股份有限公司 一种基于新型前驱体材料的氧化锆薄膜制备方法
CN117626218A (zh) * 2023-12-08 2024-03-01 江苏雅克科技股份有限公司 一种基于原子层沉积的ZrxHf(1-x)O2薄膜的制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006131751A1 (en) * 2005-11-16 2006-12-14 Sigma-Aldrich Co. Cyclopentadienyl type hafnium and zirconium precursors and use thereof in atomic layer deposition
WO2007066546A1 (ja) * 2005-12-06 2007-06-14 Tri Chemical Laboratories Inc. ハフニウム系化合物、ハフニウム系薄膜形成材料、及びハフニウム系薄膜形成方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107190B2 (ja) 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
JPH02167334A (ja) * 1988-09-05 1990-06-27 Idemitsu Kosan Co Ltd 重合体の製造法
JP2908819B2 (ja) * 1989-09-21 1999-06-21 出光興産株式会社 アリールスチレン系重合体およびその製造方法
US5393564A (en) 1993-05-14 1995-02-28 Micron Semiconductor, Inc. High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor
ES2139119T3 (es) 1995-07-12 2000-02-01 Witco Gmbh Procedimiento para la preparacion de derivados de ciclopentadienil-titanio-trialcoxi.
US7192892B2 (en) * 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US20040198069A1 (en) * 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
JP2005171291A (ja) 2003-12-09 2005-06-30 Tosoh Corp チタン含有薄膜およびその製造方法
JP4610487B2 (ja) 2003-12-25 2011-01-12 株式会社Adeka 金属化合物、薄膜形成用原料及び薄膜の製造方法
US7091129B2 (en) * 2003-12-30 2006-08-15 Intel Corporation Atomic layer deposition using photo-enhanced bond reconfiguration
US7514119B2 (en) * 2005-04-29 2009-04-07 Linde, Inc. Method and apparatus for using solution based precursors for atomic layer deposition
KR100716652B1 (ko) * 2005-04-30 2007-05-09 주식회사 하이닉스반도체 나노컴포지트 유전막을 갖는 캐패시터 및 그의 제조 방법
JP2009539237A (ja) * 2006-06-02 2009-11-12 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 新規なチタン、ジルコニウムおよびハフニウム前駆体をベースとするhigh−k誘電体フィルムを形成する方法および半導体製造におけるそれらの使用
KR100852234B1 (ko) 2006-11-17 2008-08-13 삼성전자주식회사 금속 산화막의 형성 방법, 이를 이용한 게이트 구조물의제조 방법 및 커패시터의 제조 방법
US20080274615A1 (en) * 2007-05-02 2008-11-06 Vaartstra Brian A Atomic Layer Deposition Methods, Methods of Forming Dielectric Materials, Methods of Forming Capacitors, And Methods of Forming DRAM Unit Cells
KR20080101040A (ko) 2007-05-15 2008-11-21 주식회사 유피케미칼 금속 박막 또는 세라믹 박막 증착용 유기 금속 전구체화합물 및 이를 이용한 박막 증착 방법
JP2010539709A (ja) 2007-09-14 2010-12-16 シグマ−アルドリッチ・カンパニー モノシクロペンタジエニルチタン系前駆体を用いる原子層成長によるチタン含有薄膜の作製方法
KR20150139628A (ko) 2007-09-14 2015-12-11 시그마 알드리치 컴퍼니 엘엘씨 하프늄과 지르코늄계 전구체를 이용한 원자층 증착에 의한 박막의 제조 방법
US8853075B2 (en) 2008-02-27 2014-10-07 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ALD) process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006131751A1 (en) * 2005-11-16 2006-12-14 Sigma-Aldrich Co. Cyclopentadienyl type hafnium and zirconium precursors and use thereof in atomic layer deposition
WO2007066546A1 (ja) * 2005-12-06 2007-06-14 Tri Chemical Laboratories Inc. ハフニウム系化合物、ハフニウム系薄膜形成材料、及びハフニウム系薄膜形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI883111B (zh) * 2020-02-04 2025-05-11 德商馬克專利公司 選擇性形成含金屬膜之方法

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