CN101815807B - 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 - Google Patents

采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 Download PDF

Info

Publication number
CN101815807B
CN101815807B CN2008801068593A CN200880106859A CN101815807B CN 101815807 B CN101815807 B CN 101815807B CN 2008801068593 A CN2008801068593 A CN 2008801068593A CN 200880106859 A CN200880106859 A CN 200880106859A CN 101815807 B CN101815807 B CN 101815807B
Authority
CN
China
Prior art keywords
precursor
ald
hafnium
metal
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008801068593A
Other languages
English (en)
Chinese (zh)
Other versions
CN101815807A (zh
Inventor
P·N·黑斯
A·金斯里
宋福全
P·威廉姆斯
T·利斯
H·O·戴维斯
R·奥德拉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sigma - Austria Mladic Newcourt LLC
Original Assignee
Sigma Aldrich Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigma Aldrich Co LLC filed Critical Sigma Aldrich Co LLC
Publication of CN101815807A publication Critical patent/CN101815807A/zh
Application granted granted Critical
Publication of CN101815807B publication Critical patent/CN101815807B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Inorganic Chemistry (AREA)
CN2008801068593A 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法 Active CN101815807B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97245107P 2007-09-14 2007-09-14
US60/972,451 2007-09-14
PCT/US2008/075831 WO2009036046A1 (en) 2007-09-14 2008-09-10 Methods of preparing thin films by atomic layer deposition using monocyclopentadienyl trialkoxy hafnium and zirconium precursors

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201110448392.4A Division CN103147062A (zh) 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法

Publications (2)

Publication Number Publication Date
CN101815807A CN101815807A (zh) 2010-08-25
CN101815807B true CN101815807B (zh) 2012-06-13

Family

ID=40070699

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110448392.4A Pending CN103147062A (zh) 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法
CN2008801068593A Active CN101815807B (zh) 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201110448392.4A Pending CN103147062A (zh) 2007-09-14 2008-09-10 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法

Country Status (7)

Country Link
US (1) US8039062B2 (enExample)
EP (1) EP2191034B1 (enExample)
JP (1) JP2010539710A (enExample)
KR (2) KR20100072021A (enExample)
CN (2) CN103147062A (enExample)
TW (1) TWI464290B (enExample)
WO (1) WO2009036046A1 (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432363B (en) * 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
JP2009545135A (ja) * 2006-07-20 2009-12-17 リンデ・インコーポレーテッド 改良された原子層堆積法
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
TWI382987B (zh) * 2007-07-24 2013-01-21 Sigma Aldrich Co 應用於化學相沉積製程的有機金屬前驅物
TWI425110B (zh) 2007-07-24 2014-02-01 Sigma Aldrich Co 以化學相沉積法製造含金屬薄膜之方法
US8039062B2 (en) 2007-09-14 2011-10-18 Sigma-Aldrich Co. Llc Methods of atomic layer deposition using hafnium and zirconium-based precursors
EP2201149B1 (en) 2007-09-14 2013-03-13 Sigma-Aldrich Co. Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors
JP5535945B2 (ja) 2008-02-27 2014-07-02 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 原子層蒸着（ａｌｄ）法を用いる基板上にチタン含有層を形成する方法
TWI467045B (zh) * 2008-05-23 2015-01-01 Sigma Aldrich Co 高介電常數電介質薄膜與使用鈰基前驅物製造高介電常數電介質薄膜之方法
TW200949939A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based β -diketonate precursors
US20100290968A1 (en) * 2009-05-13 2010-11-18 Ce Ma Solution based lanthanide and group iii precursors for atomic layer deposition
JP2012532193A (ja) * 2009-07-06 2012-12-13 リンデ アクチエンゲゼルシャフト 溶液型の先駆物質
EP3150614B1 (en) 2009-08-07 2017-11-29 Sigma-Aldrich Co. LLC High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
KR20120093165A (ko) * 2009-08-14 2012-08-22 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 하프늄- 및 지르코늄-함유 전구체 및 그의 사용 방법
US8592606B2 (en) 2009-12-07 2013-11-26 Air Products And Chemicals, Inc. Liquid precursor for depositing group 4 metal containing films
TWI529808B (zh) 2010-06-10 2016-04-11 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
SG187920A1 (en) 2010-08-27 2013-03-28 Sigma Aldrich Co Llc Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
KR101263454B1 (ko) 2011-03-15 2013-11-27 주식회사 메카로닉스 지르코늄 금속을 함유하는 신규한 유기금속화합물 및 그 제조방법
CN103930431B (zh) 2011-03-15 2016-07-06 株式会社Mecharonics 新型第4b族金属有机化合物及其制备
KR101395644B1 (ko) * 2012-02-08 2014-05-16 주식회사 메카로닉스 신규한 4-비이 족 금속 유기화합물 및 그 제조방법
JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
JP5732962B2 (ja) * 2011-03-28 2015-06-10 宇部興産株式会社 ジルコニウムアミド化合物の製造方法
US8927748B2 (en) 2011-08-12 2015-01-06 Sigma-Aldrich Co. Llc Alkyl-substituted allyl carbonyl metal complexes and use thereof for preparing dielectric thin films
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
SG11201404375PA (en) 2012-01-26 2014-10-30 Sigma Aldrich Co Llc Molybdenum allyl complexes and use thereof in thin film deposition
WO2013157901A1 (ko) * 2012-04-20 2013-10-24 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물, 이의 제조 방법, 이를 포함하는 전구체 조성물, 및 이를 이용하는 박막의 증착 방법
KR20140121761A (ko) * 2013-04-08 2014-10-16 주식회사 유피케미칼 4 족 전이금속-함유 전구체 화합물 및 이를 이용하는 박막의 증착 방법
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
KR102008445B1 (ko) * 2014-02-26 2019-08-08 주식회사 유진테크 머티리얼즈 지르코늄 함유막 형성용 전구체 조성물 및 이를 이용한 지르코늄 함유막 형성 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
KR101569447B1 (ko) 2014-04-29 2015-11-16 (주)디엔에프 지르코늄 산화물 박막 형성용 전구체 화합물, 이의 제조방법 및 이를 이용한 박막의 제조방법
US9499571B2 (en) * 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9490145B2 (en) 2015-02-23 2016-11-08 Asm Ip Holding B.V. Removal of surface passivation
KR102147190B1 (ko) * 2015-03-20 2020-08-25 에스케이하이닉스 주식회사 막형성조성물 및 그를 이용한 박막 제조 방법
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10121699B2 (en) 2015-08-05 2018-11-06 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10814349B2 (en) 2015-10-09 2020-10-27 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US10343186B2 (en) 2015-10-09 2019-07-09 Asm Ip Holding B.V. Vapor phase deposition of organic films
KR101806987B1 (ko) * 2016-02-03 2017-12-08 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
US9981286B2 (en) 2016-03-08 2018-05-29 Asm Ip Holding B.V. Selective formation of metal silicides
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US10551741B2 (en) 2016-04-18 2020-02-04 Asm Ip Holding B.V. Method of forming a directed self-assembled layer on a substrate
WO2017188546A1 (ko) * 2016-04-28 2017-11-02 주식회사 유진테크 머티리얼즈 박막 증착 방법
US11081342B2 (en) 2016-05-05 2021-08-03 Asm Ip Holding B.V. Selective deposition using hydrophobic precursors
US10453701B2 (en) 2016-06-01 2019-10-22 Asm Ip Holding B.V. Deposition of organic films
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US9803277B1 (en) 2016-06-08 2017-10-31 Asm Ip Holding B.V. Reaction chamber passivation and selective deposition of metallic films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US11430656B2 (en) 2016-11-29 2022-08-30 Asm Ip Holding B.V. Deposition of oxide thin films
US10465289B2 (en) 2016-12-30 2019-11-05 L'Air Liquide, Société Anonyme pour l'Etude at l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10364259B2 (en) * 2016-12-30 2019-07-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
US10337104B2 (en) 2016-12-30 2019-07-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Zirconium, hafnium, titanium precursors and deposition of group 4 containing films using the same
JP7169072B2 (ja) 2017-02-14 2022-11-10 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
KR102684628B1 (ko) 2017-05-16 2024-07-15 에이에스엠 아이피 홀딩 비.브이. 유전체 상에 옥사이드의 선택적 peald
JP6948159B2 (ja) * 2017-05-31 2021-10-13 株式会社Adeka 新規な化合物、薄膜形成用原料及び薄膜の製造方法
US10900120B2 (en) 2017-07-14 2021-01-26 Asm Ip Holding B.V. Passivation against vapor deposition
CN118027087A (zh) * 2018-02-07 2024-05-14 Up化学株式会社 含第ⅳ族金属元素化合物、其制备方法、含其的膜形成用前体组合物及用其的膜形成方法
EP3752655A1 (en) 2018-02-12 2020-12-23 Merck Patent GmbH Methods of vapor deposition of ruthenium using an oxygen-free co-reactant
JP7146690B2 (ja) 2018-05-02 2022-10-04 エーエスエム アイピー ホールディング ビー．ブイ． 堆積および除去を使用した選択的層形成
KR102080218B1 (ko) * 2018-08-27 2020-02-21 (주)원익머트리얼즈 이중치환 사이클로펜타디엔 화합물, 유기금속 화합물 및 그 제조방법
JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
US12482648B2 (en) 2018-10-02 2025-11-25 Asm Ip Holding B.V. Selective passivation and selective deposition
KR102471126B1 (ko) * 2019-02-01 2022-11-28 주식회사 유피케미칼 4 족 금속 원소-함유 화합물, 이의 제조 방법, 이를 포함하는 막 형성용 전구체 조성물, 및 이를 이용하는 막의 형성 방법
US11965238B2 (en) 2019-04-12 2024-04-23 Asm Ip Holding B.V. Selective deposition of metal oxides on metal surfaces
US11139163B2 (en) 2019-10-31 2021-10-05 Asm Ip Holding B.V. Selective deposition of SiOC thin films
EP4100557A1 (en) * 2020-02-04 2022-12-14 Merck Patent GmbH Methods of selectively forming metal-containing films
TWI865747B (zh) 2020-03-30 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
KR102562274B1 (ko) 2020-12-17 2023-08-01 주식회사 이지티엠 유기 금속 전구체 화합물
KR20220157741A (ko) * 2021-05-21 2022-11-29 주식회사 아이켐스 신규한 하프늄 함유 화합물, 이를 함유하는 하프늄 전구체 조성물, 상기 하프늄 전구체 조성물을 이용한 하프늄 함유 박막 및 이의 제조방법.
KR102574475B1 (ko) * 2022-05-13 2023-09-06 주식회사 유피케미칼 4족 금속 원소-함유 전구체 화합물을 포함하는 막 증착용 조성물, 및 이를 이용한 막 형성 방법
JP2025528932A (ja) * 2022-09-02 2025-09-02 インテグリス・インコーポレーテッド フッ素化アルコキシドおよびアミドを含有する前駆体
KR20250017860A (ko) * 2023-07-28 2025-02-04 에스케이트리켐 주식회사 금속-규소 함유 박막 형성용 전구체, 이를 이용한 박막 증착 방법, 및 상기 박막을 포함하는 반도체 소자.
CN117660926A (zh) * 2023-12-07 2024-03-08 江苏雅克科技股份有限公司 一种基于新型前驱体材料的氧化锆薄膜制备方法
CN117626218A (zh) * 2023-12-08 2024-03-01 江苏雅克科技股份有限公司 一种基于原子层沉积的ZrxHf(1-x)O2薄膜的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1768159A (zh) * 2003-04-04 2006-05-03 应用材料有限公司 氮化铪沉积方法
CN1784773A (zh) * 2003-03-04 2006-06-07 微米技术有限公司 原子层沉积的电介质层
CN1855500A (zh) * 2005-04-30 2006-11-01 海力士半导体有限公司 具有纳米复合电介质结构的电容器及其制造方法
EP1717343A2 (en) * 2005-04-29 2006-11-02 The Boc Group, Inc. Method and apparatus for using solution based precursors for atomic layer deposition

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107190B2 (ja) 1984-03-30 1995-11-15 キヤノン株式会社 光化学気相成長方法
JPH02167334A (ja) * 1988-09-05 1990-06-27 Idemitsu Kosan Co Ltd 重合体の製造法
JP2908819B2 (ja) * 1989-09-21 1999-06-21 出光興産株式会社 アリールスチレン系重合体およびその製造方法
US5393564A (en) 1993-05-14 1995-02-28 Micron Semiconductor, Inc. High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor
ES2139119T3 (es) 1995-07-12 2000-02-01 Witco Gmbh Procedimiento para la preparacion de derivados de ciclopentadienil-titanio-trialcoxi.
JP2005171291A (ja) 2003-12-09 2005-06-30 Tosoh Corp チタン含有薄膜およびその製造方法
WO2005063685A1 (ja) 2003-12-25 2005-07-14 Asahi Denka Co., Ltd. 金属化合物、薄膜形成用原料及び薄膜の製造方法
US7091129B2 (en) * 2003-12-30 2006-08-15 Intel Corporation Atomic layer deposition using photo-enhanced bond reconfiguration
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
CN101341155B (zh) * 2005-12-06 2012-03-07 Tri化学研究所股份有限公司 铪系化合物、形成铪系薄膜的材料和形成铪系薄膜的方法
WO2007140813A1 (en) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
KR100852234B1 (ko) 2006-11-17 2008-08-13 삼성전자주식회사 금속 산화막의 형성 방법, 이를 이용한 게이트 구조물의제조 방법 및 커패시터의 제조 방법
US20080274615A1 (en) * 2007-05-02 2008-11-06 Vaartstra Brian A Atomic Layer Deposition Methods, Methods of Forming Dielectric Materials, Methods of Forming Capacitors, And Methods of Forming DRAM Unit Cells
KR20080101040A (ko) 2007-05-15 2008-11-21 주식회사 유피케미칼 금속 박막 또는 세라믹 박막 증착용 유기 금속 전구체화합물 및 이를 이용한 박막 증착 방법
US8039062B2 (en) 2007-09-14 2011-10-18 Sigma-Aldrich Co. Llc Methods of atomic layer deposition using hafnium and zirconium-based precursors
EP2201149B1 (en) 2007-09-14 2013-03-13 Sigma-Aldrich Co. Methods of preparing titanium containing thin films by atomic layer deposition using monocyclopentadienyl titanium-based precursors
JP5535945B2 (ja) 2008-02-27 2014-07-02 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 原子層蒸着（ａｌｄ）法を用いる基板上にチタン含有層を形成する方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1784773A (zh) * 2003-03-04 2006-06-07 微米技术有限公司 原子层沉积的电介质层
CN1768159A (zh) * 2003-04-04 2006-05-03 应用材料有限公司 氮化铪沉积方法
EP1717343A2 (en) * 2005-04-29 2006-11-02 The Boc Group, Inc. Method and apparatus for using solution based precursors for atomic layer deposition
CN1855500A (zh) * 2005-04-30 2006-11-01 海力士半导体有限公司 具有纳米复合电介质结构的电容器及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
pielaszek research.ALD of ZrO2 Thin Films Exploiting Novel Mixed Alkylamido-Cyclopentadienyl Precursors.《Book of Abstracts: E-MRS 2007 Fall Meeting》.2007, *

Also Published As

Publication number Publication date
KR20100072021A (ko) 2010-06-29
US20090081385A1 (en) 2009-03-26
TW200912024A (en) 2009-03-16
WO2009036046A1 (en) 2009-03-19
KR20150139628A (ko) 2015-12-11
EP2191034A1 (en) 2010-06-02
CN101815807A (zh) 2010-08-25
JP2010539710A (ja) 2010-12-16
EP2191034B1 (en) 2013-03-13
TWI464290B (zh) 2014-12-11
US8039062B2 (en) 2011-10-18
CN103147062A (zh) 2013-06-12

Similar Documents

Publication Publication Date Title
CN101815807B (zh) 采用单环戊二烯基三烷氧基铪和锆前体通过原子层沉积制备薄膜的方法
US8221852B2 (en) Methods of atomic layer deposition using titanium-based precursors
US10217629B2 (en) Method of forming dielectric films, new precursors and their use in semiconductor manufacturing
CN103097394B (zh) 钼(iv)酰胺前驱物和其在原子层沉积中的用途
TWI454589B (zh) 用於含金屬膜的第４族金屬前驅物
TWI444497B (zh) 用於沉積含金屬膜的金屬－烯醇化物前驅物
TWI496929B (zh) 含鉿與鋯的前驅物及使用彼之方法
TWI693229B (zh) 用於含鋯膜氣相沈積的含鋯成膜組成物
TW202246299A (zh) 含有環戊二烯配位基之金屬錯合物以及形成含金屬之膜之方法
TWI838641B (zh) 含有第四族金屬元素之化合物、含有其的前驅物組合物及使用其形成薄膜之方法
KR102815650B1 (ko) 4족 전이금속 함유 박막 형성용 전구체 및 이를 이용한 4족 전이금속 함유 박막 형성 방법.
TWI896184B (zh) 含金屬-矽薄膜形成用前驅體、利用所述前驅體的薄膜沉積方法以及包含所述薄膜的半導體器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: SIGMA-ALDRICH, INC.

Free format text: FORMER OWNER: SIGMA ALDRICH CO.

Effective date: 20120214

C41 Transfer of patent application or patent right or utility model
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: American Missouri

Applicant after: SIGMA-ALDRICH Co.

Address before: American Missouri

Applicant before: Sigma - Austria Mladic Newcourt LLC

TA01 Transfer of patent application right

Effective date of registration: 20120214

Address after: American Missouri

Applicant after: Sigma - Austria Mladic Newcourt LLC

Address before: American Missouri

Applicant before: SIGMA-ALDRICH Co.

C14 Grant of patent or utility model
GR01 Patent grant