JP2010534614A5 - - Google Patents
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- Publication number
- JP2010534614A5 JP2010534614A5 JP2010518420A JP2010518420A JP2010534614A5 JP 2010534614 A5 JP2010534614 A5 JP 2010534614A5 JP 2010518420 A JP2010518420 A JP 2010518420A JP 2010518420 A JP2010518420 A JP 2010518420A JP 2010534614 A5 JP2010534614 A5 JP 2010534614A5
- Authority
- JP
- Japan
- Prior art keywords
- generally
- silicon
- molten silicon
- volume
- silicon content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 139
- 229910052710 silicon Inorganic materials 0.000 claims description 139
- 239000010703 silicon Substances 0.000 claims description 139
- 238000000034 method Methods 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 230000008023 solidification Effects 0.000 claims 10
- 238000007711 solidification Methods 0.000 claims 10
- 239000002994 raw material Substances 0.000 claims 7
- 230000006911 nucleation Effects 0.000 claims 5
- 238000010899 nucleation Methods 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 4
- 238000000605 extraction Methods 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 2
- 239000001569 carbon dioxide Substances 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 238000002425 crystallisation Methods 0.000 claims 2
- 230000008025 crystallization Effects 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 230000003750 conditioning effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 230000007847 structural defect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/828,734 US7955433B2 (en) | 2007-07-26 | 2007-07-26 | Method and system for forming a silicon ingot using a low-grade silicon feedstock |
| US11/828,734 | 2007-07-26 | ||
| PCT/US2008/071234 WO2009015356A1 (en) | 2007-07-26 | 2008-07-25 | Method and system for forming a silicon ingot using a low-grade silicon feedstock |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010534614A JP2010534614A (ja) | 2010-11-11 |
| JP2010534614A5 true JP2010534614A5 (enExample) | 2011-08-25 |
| JP5462988B2 JP5462988B2 (ja) | 2014-04-02 |
Family
ID=40281853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010518420A Expired - Fee Related JP5462988B2 (ja) | 2007-07-26 | 2008-07-25 | 低品位シリコン原料を用いてシリコンインゴットを形成する方法およびシステム |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7955433B2 (enExample) |
| EP (1) | EP2179078B1 (enExample) |
| JP (1) | JP5462988B2 (enExample) |
| CN (1) | CN102037163B (enExample) |
| AT (1) | ATE548487T1 (enExample) |
| ES (1) | ES2383928T3 (enExample) |
| WO (1) | WO2009015356A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7955433B2 (en) | 2007-07-26 | 2011-06-07 | Calisolar, Inc. | Method and system for forming a silicon ingot using a low-grade silicon feedstock |
| DE112009001990B4 (de) * | 2008-08-15 | 2018-01-25 | Ulvac, Inc. | Verfahren zum Reinigen von Silizium |
| WO2010036807A1 (en) * | 2008-09-24 | 2010-04-01 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
| US20100213643A1 (en) * | 2009-02-26 | 2010-08-26 | Gadgil Prasad N | Rapid synthesis of polycrystalline silicon sheets for photo-voltaic solar cell manufacturing |
| TWI379430B (en) * | 2009-04-16 | 2012-12-11 | Atomic Energy Council | A method of fabricating a thin interface for internal light reflection and impurities isolation |
| CN101575733B (zh) * | 2009-05-22 | 2011-07-27 | 北京航空航天大学 | 一种工业化生产太阳能级多晶硅的方法 |
| CN101775650B (zh) * | 2010-03-12 | 2013-01-30 | 厦门大学 | 一种太阳能多晶硅铸锭的制备方法 |
| CN102021650B (zh) * | 2010-12-31 | 2012-06-06 | 常州天合光能有限公司 | 一种大型多晶锭的生产方法 |
| KR20140017604A (ko) | 2011-03-15 | 2014-02-11 | 지티에이티 코포레이션 | 결정성장 장치용 자동 비전 시스템 |
| JP5512647B2 (ja) * | 2011-12-22 | 2014-06-04 | シャープ株式会社 | シリコンの精製方法、吸収ユニット、およびシリコン精製装置 |
| CN103266351B (zh) * | 2013-05-31 | 2015-08-12 | 大连理工大学 | 多晶硅铸锭硅固液分离方法及设备 |
| US10402360B2 (en) * | 2016-06-10 | 2019-09-03 | Johnson Controls Technology Company | Building management system with automatic equipment discovery and equipment model distribution |
| JP6919633B2 (ja) * | 2018-08-29 | 2021-08-18 | 信越半導体株式会社 | 単結晶育成方法 |
| JP7052645B2 (ja) * | 2018-08-29 | 2022-04-12 | 信越半導体株式会社 | 単結晶育成方法 |
| EP3847131B1 (de) * | 2019-04-30 | 2023-03-01 | Wacker Chemie AG | Verfahren zur raffination von rohsilicium-schmelzen mittels eines partikulären mediators |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3012865A (en) | 1957-11-25 | 1961-12-12 | Du Pont | Silicon purification process |
| DE2143112A1 (de) * | 1971-08-27 | 1973-03-01 | Siemens Ag | Verfahren zur erzielung eines gleichmaessigen radialen widerstandsverlaufs beim herstellen eines halbleiter-einkristallstabes durch tiegelfreies zonenschmelzen |
| SU661966A1 (ru) * | 1976-11-23 | 1980-04-05 | Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" | Устройство дл выт гивани монокристаллов из расплава |
| FR2430917A1 (fr) * | 1978-07-11 | 1980-02-08 | Comp Generale Electricite | Procede et dispositif d'elaboration de silicium polycristallin |
| JPS5933554B2 (ja) * | 1982-08-19 | 1984-08-16 | 株式会社東芝 | 結晶成長装置 |
| US4565671A (en) * | 1983-08-05 | 1986-01-21 | Kabushiki Kaisha Toshiba | Single crystal manufacturing apparatus |
| DE3411955A1 (de) | 1984-03-30 | 1985-10-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum abtrennen fester bestandteile aus fluessigem silicium |
| EP0221051A1 (en) * | 1985-04-16 | 1987-05-13 | Energy Materials Corporation | Method and apparatus for growing single crystal bodies |
| JPS62291977A (ja) | 1986-06-06 | 1987-12-18 | シ−メンス、アクチエンゲゼルシヤフト | 太陽電池用シリコン盤の切り出し方法と装置 |
| US5314667A (en) * | 1991-03-04 | 1994-05-24 | Lim John C | Method and apparatus for single crystal silicon production |
| US5580171A (en) * | 1995-07-24 | 1996-12-03 | Lim; John C. | Solids mixing, storing and conveying system for use with a furnace for single crystal silicon production |
| EP0796820B1 (en) | 1996-03-19 | 2000-07-19 | Kawasaki Steel Corporation | Process and apparatus for refining silicon |
| BR9611816A (pt) | 1996-10-14 | 1999-07-13 | Kawasaki Steel Co | Processo e aparelho para fabricação de silício policristalino e processo para fabricação de pastilhas de silício para baterias solares |
| CA2232777C (en) | 1997-03-24 | 2001-05-15 | Hiroyuki Baba | Method for producing silicon for use in solar cells |
| JP3520957B2 (ja) * | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
| WO2001064976A1 (en) * | 2000-03-03 | 2001-09-07 | Shin-Etsu Handotai Co.,Ltd. | Saucer for escaped melt in apparatus for pulling up single crystal |
| FR2808809B1 (fr) | 2000-05-11 | 2003-06-27 | Emix | Installation de fabrication en continu de barreau de silicium multicristallin |
| JP3698080B2 (ja) * | 2001-09-11 | 2005-09-21 | 三菱住友シリコン株式会社 | 単結晶引上げ方法 |
| US20050139148A1 (en) | 2002-02-04 | 2005-06-30 | Hiroyasu Fujiwara | Silicon purifying method, slag for purifying silicon and purified silicon |
| WO2004030044A2 (en) | 2002-09-27 | 2004-04-08 | Astropower, Inc. | Methods and systems for purifying elements |
| JP2004161575A (ja) * | 2002-11-15 | 2004-06-10 | Sumitomo Titanium Corp | 多結晶シリコンインゴット及び部材の製造方法 |
| US20050066881A1 (en) * | 2003-09-25 | 2005-03-31 | Canon Kabushiki Kaisha | Continuous production method for crystalline silicon and production apparatus for the same |
| US7635414B2 (en) * | 2003-11-03 | 2009-12-22 | Solaicx, Inc. | System for continuous growing of monocrystalline silicon |
| JP4947455B2 (ja) | 2005-08-16 | 2012-06-06 | 則近 山内 | 電子ビームを用いたシリコンの精錬方法及び装置 |
| JP4817761B2 (ja) * | 2005-08-30 | 2011-11-16 | 京セラ株式会社 | 半導体インゴット及び太陽電池素子の製造方法 |
| US8262797B1 (en) * | 2007-03-13 | 2012-09-11 | Solaicx, Inc. | Weir design providing optimal purge gas flow, melt control, and temperature stabilization for improved single crystal growth in a continuous Czochralski process |
| US7955433B2 (en) | 2007-07-26 | 2011-06-07 | Calisolar, Inc. | Method and system for forming a silicon ingot using a low-grade silicon feedstock |
| US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
| US7998224B2 (en) * | 2008-10-21 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Removal of a sheet from a production apparatus |
| US8652257B2 (en) * | 2010-02-22 | 2014-02-18 | Lev George Eidelman | Controlled gravity feeding czochralski apparatus with on the way melting raw material |
-
2007
- 2007-07-26 US US11/828,734 patent/US7955433B2/en not_active Expired - Fee Related
-
2008
- 2008-07-25 ES ES08796655T patent/ES2383928T3/es active Active
- 2008-07-25 CN CN2008801096076A patent/CN102037163B/zh not_active Expired - Fee Related
- 2008-07-25 WO PCT/US2008/071234 patent/WO2009015356A1/en not_active Ceased
- 2008-07-25 EP EP08796655A patent/EP2179078B1/en not_active Not-in-force
- 2008-07-25 AT AT08796655T patent/ATE548487T1/de active
- 2008-07-25 JP JP2010518420A patent/JP5462988B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-25 US US13/034,956 patent/US8882912B2/en not_active Expired - Fee Related
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