JP2010534610A5 - - Google Patents

Download PDF

Info

Publication number
JP2010534610A5
JP2010534610A5 JP2010518410A JP2010518410A JP2010534610A5 JP 2010534610 A5 JP2010534610 A5 JP 2010534610A5 JP 2010518410 A JP2010518410 A JP 2010518410A JP 2010518410 A JP2010518410 A JP 2010518410A JP 2010534610 A5 JP2010534610 A5 JP 2010534610A5
Authority
JP
Japan
Prior art keywords
edge
string
ribbon crystal
forming
ribbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010518410A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010534610A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/071179 external-priority patent/WO2009018145A1/en
Publication of JP2010534610A publication Critical patent/JP2010534610A/ja
Publication of JP2010534610A5 publication Critical patent/JP2010534610A5/ja
Pending legal-status Critical Current

Links

JP2010518410A 2007-07-27 2008-07-25 ウエハ/リボン結晶方法およびその装置 Pending JP2010534610A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95243507P 2007-07-27 2007-07-27
PCT/US2008/071179 WO2009018145A1 (en) 2007-07-27 2008-07-25 Wafer/ribbon crystal method and apparatus

Publications (2)

Publication Number Publication Date
JP2010534610A JP2010534610A (ja) 2010-11-11
JP2010534610A5 true JP2010534610A5 (enExample) 2012-07-26

Family

ID=39791565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010518410A Pending JP2010534610A (ja) 2007-07-27 2008-07-25 ウエハ/リボン結晶方法およびその装置

Country Status (9)

Country Link
US (1) US20090025787A1 (enExample)
EP (1) EP2195475B1 (enExample)
JP (1) JP2010534610A (enExample)
KR (1) KR20100039386A (enExample)
CN (1) CN101688322B (enExample)
CA (1) CA2689519A1 (enExample)
ES (1) ES2399465T3 (enExample)
MY (1) MY150483A (enExample)
WO (1) WO2009018145A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US10584592B2 (en) * 2015-11-23 2020-03-10 United Technologies Corporation Platform for an airfoil having bowed sidewalls

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
FR2516708A1 (fr) 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPS62108797A (ja) 1985-11-07 1987-05-20 Toshiba Corp 帯状結晶製造装置
JPS62123092A (ja) * 1985-11-21 1987-06-04 Toshiba Corp 平板状シリコン結晶の成長装置
US5122504A (en) * 1990-02-27 1992-06-16 The Board Of Trustees Of The Leland Stanford Junior University Superconducting ribbon process using laser heating
USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP4079548B2 (ja) * 1999-04-30 2008-04-23 株式会社荏原製作所 結晶の連続引き上げ装置
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6376797B1 (en) * 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
US6423928B1 (en) * 2000-10-12 2002-07-23 Ase Americas, Inc. Gas assisted laser cutting of thin and fragile materials
JP2003267716A (ja) * 2002-03-13 2003-09-25 Sharp Corp 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法
US7162874B2 (en) * 2004-07-30 2007-01-16 Hija Holding B.V. Apparatus and method for gas turbine engine fuel/air premixer exit velocity control
CN100539206C (zh) * 2005-09-23 2009-09-09 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
CN100416863C (zh) * 2006-10-13 2008-09-03 中国科学院上海技术物理研究所 廉价多晶硅薄膜太阳电池

Similar Documents

Publication Publication Date Title
RU2013144427A (ru) Способы формирования поликристаллических элементов и конструкции, сформированные этими способами
MY159405A (en) Three-dimensional thin-film semiconductor substrate with through-holes and methods of manufacturing
JP2018535536A5 (enExample)
JP2013004584A5 (enExample)
JP2010215506A5 (ja) 単結晶iii−v族窒化物材料とその製造方法、物品およびウエハ
WO2012061266A3 (en) Method of forming an array of nanostructures
TW200715396A (en) Manufacturing method for a semiconductor device
SG170662A1 (en) Method for producing a semiconductor wafer
RU2018113268A (ru) КОМПОЗИТНАЯ SiC-ПОДЛОЖКА И СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ
RU2018112510A (ru) СПОСОБ ИЗГОТОВЛЕНИЯ КОМПОЗИТНОЙ ПОДЛОЖКИ SiC И СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВОЙ ПОДЛОЖКИ
JP2006187857A5 (enExample)
JP2005340423A5 (enExample)
WO2009063954A1 (ja) 基板処理方法及びこの方法によって処理された基板
EP1983575A3 (en) Method for manufacturing bonded substrate
JP2010283371A5 (enExample)
TW200713429A (en) Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
JP2010534610A5 (enExample)
JP2016526783A5 (enExample)
WO2009007907A3 (en) Single crystal growth on a mis-matched substrate
JP2009124153A (ja) ポリシングされたエッジ部を備えた半導体ウェハの製造方法
CN106068546B (zh) 半导体外延晶圆的制造方法及半导体外延晶圆
CN101406168A (zh) 恢复珊瑚礁生态系统的方法及其造礁石珊瑚幼体附着装置
JP2008160117A5 (enExample)
WO2009060913A1 (ja) エピタキシャルウェーハの製造方法
JP2019041005A5 (enExample)