CN101688322B - 晶片/带状晶体方法和装置 - Google Patents

晶片/带状晶体方法和装置 Download PDF

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Publication number
CN101688322B
CN101688322B CN200880023563.5A CN200880023563A CN101688322B CN 101688322 B CN101688322 B CN 101688322B CN 200880023563 A CN200880023563 A CN 200880023563A CN 101688322 B CN101688322 B CN 101688322B
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CN
China
Prior art keywords
crystal
edge
tape shape
removal
wafer
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Expired - Fee Related
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CN200880023563.5A
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English (en)
Chinese (zh)
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CN101688322A (zh
Inventor
安德鲁·加博尔
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Evergreen Solar Inc
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Evergreen Solar Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN200880023563.5A 2007-07-27 2008-07-25 晶片/带状晶体方法和装置 Expired - Fee Related CN101688322B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US95243507P 2007-07-27 2007-07-27
US60/952,435 2007-07-27
PCT/US2008/071179 WO2009018145A1 (en) 2007-07-27 2008-07-25 Wafer/ribbon crystal method and apparatus

Publications (2)

Publication Number Publication Date
CN101688322A CN101688322A (zh) 2010-03-31
CN101688322B true CN101688322B (zh) 2013-03-27

Family

ID=39791565

Family Applications (1)

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CN200880023563.5A Expired - Fee Related CN101688322B (zh) 2007-07-27 2008-07-25 晶片/带状晶体方法和装置

Country Status (9)

Country Link
US (1) US20090025787A1 (enExample)
EP (1) EP2195475B1 (enExample)
JP (1) JP2010534610A (enExample)
KR (1) KR20100039386A (enExample)
CN (1) CN101688322B (enExample)
CA (1) CA2689519A1 (enExample)
ES (1) ES2399465T3 (enExample)
MY (1) MY150483A (enExample)
WO (1) WO2009018145A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US10584592B2 (en) * 2015-11-23 2020-03-10 United Technologies Corporation Platform for an airfoil having bowed sidewalls

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
CN1349569A (zh) * 1999-04-30 2002-05-15 株式会社荏原制作所 结晶的连续提拉方法和装置
CN1933185A (zh) * 2006-10-13 2007-03-21 中国科学院上海技术物理研究所 廉价多晶硅薄膜太阳电池
CN1937258A (zh) * 2005-09-23 2007-03-28 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
FR2516708A1 (fr) 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPS62108797A (ja) 1985-11-07 1987-05-20 Toshiba Corp 帯状結晶製造装置
JPS62123092A (ja) * 1985-11-21 1987-06-04 Toshiba Corp 平板状シリコン結晶の成長装置
US5122504A (en) * 1990-02-27 1992-06-16 The Board Of Trustees Of The Leland Stanford Junior University Superconducting ribbon process using laser heating
USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6376797B1 (en) * 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
US6423928B1 (en) * 2000-10-12 2002-07-23 Ase Americas, Inc. Gas assisted laser cutting of thin and fragile materials
JP2003267716A (ja) * 2002-03-13 2003-09-25 Sharp Corp 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法
US7162874B2 (en) * 2004-07-30 2007-01-16 Hija Holding B.V. Apparatus and method for gas turbine engine fuel/air premixer exit velocity control
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
CN1349569A (zh) * 1999-04-30 2002-05-15 株式会社荏原制作所 结晶的连续提拉方法和装置
CN1937258A (zh) * 2005-09-23 2007-03-28 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构
CN1933185A (zh) * 2006-10-13 2007-03-21 中国科学院上海技术物理研究所 廉价多晶硅薄膜太阳电池

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Hahn,G.etc.16% efficiency of encapsulated large area screen printed string ribbon cell.《Photovoltaic Energy Conversion,2003.Proceedings of 3rd World Conference》.2003,第2卷1289-1292. *
JP昭58-88116A 1983.05.26
JP昭62-123092A 1987.06.04
JP特开2001-122696A 2001.05.08

Also Published As

Publication number Publication date
CN101688322A (zh) 2010-03-31
EP2195475B1 (en) 2012-11-14
KR20100039386A (ko) 2010-04-15
US20090025787A1 (en) 2009-01-29
WO2009018145A1 (en) 2009-02-05
EP2195475A1 (en) 2010-06-16
CA2689519A1 (en) 2009-02-05
MY150483A (en) 2014-01-30
ES2399465T3 (es) 2013-04-01
JP2010534610A (ja) 2010-11-11

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