CN1937258A - 可以充分吸收更广泛波长太阳光的太阳能电池结构 - Google Patents
可以充分吸收更广泛波长太阳光的太阳能电池结构 Download PDFInfo
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- CN1937258A CN1937258A CNA2005100299743A CN200510029974A CN1937258A CN 1937258 A CN1937258 A CN 1937258A CN A2005100299743 A CNA2005100299743 A CN A2005100299743A CN 200510029974 A CN200510029974 A CN 200510029974A CN 1937258 A CN1937258 A CN 1937258A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100299743A CN100539206C (zh) | 2005-09-23 | 2005-09-23 | 可以充分吸收更广泛波长太阳光的太阳能电池结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100299743A CN100539206C (zh) | 2005-09-23 | 2005-09-23 | 可以充分吸收更广泛波长太阳光的太阳能电池结构 |
Publications (2)
Publication Number | Publication Date |
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CN1937258A true CN1937258A (zh) | 2007-03-28 |
CN100539206C CN100539206C (zh) | 2009-09-09 |
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CNB2005100299743A Expired - Fee Related CN100539206C (zh) | 2005-09-23 | 2005-09-23 | 可以充分吸收更广泛波长太阳光的太阳能电池结构 |
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CN (1) | CN100539206C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101882636B (zh) * | 2010-05-12 | 2011-10-19 | 中国科学院半导体研究所 | 背光面为广谱吸收层的硅基太阳能电池结构及其制作方法 |
CN102460034A (zh) * | 2009-04-07 | 2012-05-16 | 应用纳米结构方案公司 | 使用并入碳纳米管的涂层的太阳能接收器 |
US8263860B2 (en) | 2008-04-03 | 2012-09-11 | Tsinghua University | Silicon photovoltaic device with carbon nanotube cable electrode |
CN102956737A (zh) * | 2011-08-17 | 2013-03-06 | 苏州捷迪纳米科技有限公司 | 碳纳米管太阳能电池及其制备方法 |
CN101688322B (zh) * | 2007-07-27 | 2013-03-27 | 长青太阳能股份有限公司 | 晶片/带状晶体方法和装置 |
US8796537B2 (en) | 2008-03-07 | 2014-08-05 | Tsinghua University | Carbon nanotube based solar cell |
TWI459568B (zh) * | 2008-03-21 | 2014-11-01 | Hon Hai Prec Ind Co Ltd | 太陽能電池 |
US8895841B2 (en) | 2008-04-18 | 2014-11-25 | Tsinghua University | Carbon nanotube based silicon photovoltaic device |
-
2005
- 2005-09-23 CN CNB2005100299743A patent/CN100539206C/zh not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101688322B (zh) * | 2007-07-27 | 2013-03-27 | 长青太阳能股份有限公司 | 晶片/带状晶体方法和装置 |
US8796537B2 (en) | 2008-03-07 | 2014-08-05 | Tsinghua University | Carbon nanotube based solar cell |
TWI459568B (zh) * | 2008-03-21 | 2014-11-01 | Hon Hai Prec Ind Co Ltd | 太陽能電池 |
US8263860B2 (en) | 2008-04-03 | 2012-09-11 | Tsinghua University | Silicon photovoltaic device with carbon nanotube cable electrode |
US8895841B2 (en) | 2008-04-18 | 2014-11-25 | Tsinghua University | Carbon nanotube based silicon photovoltaic device |
CN102460034A (zh) * | 2009-04-07 | 2012-05-16 | 应用纳米结构方案公司 | 使用并入碳纳米管的涂层的太阳能接收器 |
CN101882636B (zh) * | 2010-05-12 | 2011-10-19 | 中国科学院半导体研究所 | 背光面为广谱吸收层的硅基太阳能电池结构及其制作方法 |
CN102956737A (zh) * | 2011-08-17 | 2013-03-06 | 苏州捷迪纳米科技有限公司 | 碳纳米管太阳能电池及其制备方法 |
CN102956737B (zh) * | 2011-08-17 | 2015-08-05 | 苏州捷迪纳米科技有限公司 | 碳纳米管太阳能电池及其制备方法 |
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Publication number | Publication date |
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CN100539206C (zh) | 2009-09-09 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111129 |
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Effective date of registration: 20111129 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20090909 Termination date: 20180923 |
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