JP2010534610A - ウエハ／リボン結晶方法およびその装置 - Google Patents

ウエハ／リボン結晶方法およびその装置 Download PDF

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Publication number
JP2010534610A
JP2010534610A JP2010518410A JP2010518410A JP2010534610A JP 2010534610 A JP2010534610 A JP 2010534610A JP 2010518410 A JP2010518410 A JP 2010518410A JP 2010518410 A JP2010518410 A JP 2010518410A JP 2010534610 A JP2010534610 A JP 2010534610A
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edge
string
ribbon
ribbon crystal
crystal
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JP2010518410A
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Japanese (ja)
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JP2010534610A5 (enExample
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アンドリュー ガボアー，
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エバーグリーン ソーラー， インコーポレイテッド
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Publication of JP2010534610A publication Critical patent/JP2010534610A/ja
Publication of JP2010534610A5 publication Critical patent/JP2010534610A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2010518410A 2007-07-27 2008-07-25 ウエハ／リボン結晶方法およびその装置 Pending JP2010534610A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95243507P 2007-07-27 2007-07-27
PCT/US2008/071179 WO2009018145A1 (en) 2007-07-27 2008-07-25 Wafer/ribbon crystal method and apparatus

Publications (2)

Publication Number Publication Date
JP2010534610A true JP2010534610A (ja) 2010-11-11
JP2010534610A5 JP2010534610A5 (enExample) 2012-07-26

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ID=39791565

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JP2010518410A Pending JP2010534610A (ja) 2007-07-27 2008-07-25 ウエハ／リボン結晶方法およびその装置

Country Status (9)

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US (1) US20090025787A1 (enExample)
EP (1) EP2195475B1 (enExample)
JP (1) JP2010534610A (enExample)
KR (1) KR20100039386A (enExample)
CN (1) CN101688322B (enExample)
CA (1) CA2689519A1 (enExample)
ES (1) ES2399465T3 (enExample)
MY (1) MY150483A (enExample)
WO (1) WO2009018145A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US10584592B2 (en) * 2015-11-23 2020-03-10 United Technologies Corporation Platform for an airfoil having bowed sidewalls

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003267716A (ja) * 2002-03-13 2003-09-25 Sharp Corp 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法

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US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
FR2516708A1 (fr) 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPS62108797A (ja) 1985-11-07 1987-05-20 Toshiba Corp 帯状結晶製造装置
JPS62123092A (ja) * 1985-11-21 1987-06-04 Toshiba Corp 平板状シリコン結晶の成長装置
US5122504A (en) * 1990-02-27 1992-06-16 The Board Of Trustees Of The Leland Stanford Junior University Superconducting ribbon process using laser heating
USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP4079548B2 (ja) * 1999-04-30 2008-04-23 株式会社荏原製作所 結晶の連続引き上げ装置
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6376797B1 (en) * 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
US6423928B1 (en) * 2000-10-12 2002-07-23 Ase Americas, Inc. Gas assisted laser cutting of thin and fragile materials
US7162874B2 (en) * 2004-07-30 2007-01-16 Hija Holding B.V. Apparatus and method for gas turbine engine fuel/air premixer exit velocity control
CN100539206C (zh) * 2005-09-23 2009-09-09 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
CN100416863C (zh) * 2006-10-13 2008-09-03 中国科学院上海技术物理研究所 廉价多晶硅薄膜太阳电池

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003267716A (ja) * 2002-03-13 2003-09-25 Sharp Corp 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JPN5010012140; Ｇ．　Ｈａｈｎ　ｅｔ　ａｌ　．: '１４％　ｅｆｆｉｅｎｔ　ｌａｒｇｅ　ａｒｅａ　ｓｃｒｅｅｎ　ｐｒｉｎｔｅｄ　ｓｔｒｉｎｇ　ｒｉｂｂｏｎ　ｓｏｌａｒ　ｃｅｌｌｓ' １７ｔｈ　Ｅｕｒｏｐｅａｎ　Ｐｈｏｔｏｖｏｌｔａｔｉｃ　Ｅｎｅｒｇｙ　Ｃｏｎｆｅｒｅｎｃｅ　Ｐｒｏｃ． Ｖｏｌ．　Ｃｏｎｆ．　１７, 20011022, ｐｐ．　１７１９-１７２２, ＷＩＰ-ＲＥＮＥＷＡＢＬＥ　ＥＮＥＲＧＩＥＳ *
JPN5010012141; Ｍ．　Ｋａｅｓ　ｅｔ　ａｌ．: 'Ｂｕｌｋ　ｐａｓｓｉｖａｔｉｏｎ　ｉｎ　ｓｉｌｉｃｏｎ　ｒｉｂｂｏｎｓ　-　Ａ　ｌｉｆｅｔｉｍｅ　ｓｔｙｄｙ　ｆｏｒ　ａｎ　ｅｎｈａｎｃｅｄ　ｈｉｇｈ　ｅｆｆｉｃｉｅｎｃｙ　ｐｒｏｃｅｓｓ' Ｐｈｏｔｏｖｏｌｔａｔｉｃ　Ｓｐｅｃｉａｌｉｓｔｓ　Ｃｏｎｆｅｒｅｎｃｅ　Ｐｒｏｃ． , 20050103, ｐｐ．　９２３-９２６, ＩＥＥＥ *

Also Published As

Publication number Publication date
CN101688322A (zh) 2010-03-31
EP2195475B1 (en) 2012-11-14
KR20100039386A (ko) 2010-04-15
US20090025787A1 (en) 2009-01-29
WO2009018145A1 (en) 2009-02-05
EP2195475A1 (en) 2010-06-16
CA2689519A1 (en) 2009-02-05
MY150483A (en) 2014-01-30
ES2399465T3 (es) 2013-04-01
CN101688322B (zh) 2013-03-27

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