ES2399465T3 - Oblea/cristal de cinta y procedimiento para su fabricación - Google Patents
Oblea/cristal de cinta y procedimiento para su fabricación Download PDFInfo
- Publication number
- ES2399465T3 ES2399465T3 ES08782387T ES08782387T ES2399465T3 ES 2399465 T3 ES2399465 T3 ES 2399465T3 ES 08782387 T ES08782387 T ES 08782387T ES 08782387 T ES08782387 T ES 08782387T ES 2399465 T3 ES2399465 T3 ES 2399465T3
- Authority
- ES
- Spain
- Prior art keywords
- edge
- ribbon
- thread
- grains
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011521 glass Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000013078 crystal Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000000969 carrier Substances 0.000 claims abstract description 18
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 230000009471 action Effects 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 58
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000011324 bead Substances 0.000 claims description 5
- 230000008030 elimination Effects 0.000 claims description 5
- 238000003379 elimination reaction Methods 0.000 claims description 5
- 230000001788 irregular Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- 230000003466 anti-cipated effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010893 electron trap Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Silicon Compounds (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US95243507P | 2007-07-27 | 2007-07-27 | |
| US952435P | 2007-07-27 | ||
| PCT/US2008/071179 WO2009018145A1 (en) | 2007-07-27 | 2008-07-25 | Wafer/ribbon crystal method and apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2399465T3 true ES2399465T3 (es) | 2013-04-01 |
Family
ID=39791565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES08782387T Active ES2399465T3 (es) | 2007-07-27 | 2008-07-25 | Oblea/cristal de cinta y procedimiento para su fabricación |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20090025787A1 (enExample) |
| EP (1) | EP2195475B1 (enExample) |
| JP (1) | JP2010534610A (enExample) |
| KR (1) | KR20100039386A (enExample) |
| CN (1) | CN101688322B (enExample) |
| CA (1) | CA2689519A1 (enExample) |
| ES (1) | ES2399465T3 (enExample) |
| MY (1) | MY150483A (enExample) |
| WO (1) | WO2009018145A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101443888B (zh) * | 2006-03-13 | 2011-03-16 | 内诺格雷姆公司 | 薄硅或者锗片以及由薄片形成的光电池 |
| US20120164379A1 (en) * | 2010-12-22 | 2012-06-28 | Evergreen Solar, Inc. | Wide Sheet Wafer |
| US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
| US10584592B2 (en) * | 2015-11-23 | 2020-03-10 | United Technologies Corporation | Platform for an airfoil having bowed sidewalls |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4661200A (en) * | 1980-01-07 | 1987-04-28 | Sachs Emanuel M | String stabilized ribbon growth |
| US4689109A (en) * | 1980-12-11 | 1987-08-25 | Sachs Emanuel M | String stabilized ribbon growth a method for seeding same |
| FR2516708A1 (fr) | 1981-11-13 | 1983-05-20 | Comp Generale Electricite | Procede de fabrication de silicium polycristallin pour photopiles solaires |
| US4711695A (en) * | 1983-05-19 | 1987-12-08 | Mobil Solar Energy Corporation | Apparatus for and method of making crystalline bodies |
| JPS62108797A (ja) | 1985-11-07 | 1987-05-20 | Toshiba Corp | 帯状結晶製造装置 |
| JPS62123092A (ja) * | 1985-11-21 | 1987-06-04 | Toshiba Corp | 平板状シリコン結晶の成長装置 |
| US5122504A (en) * | 1990-02-27 | 1992-06-16 | The Board Of Trustees Of The Leland Stanford Junior University | Superconducting ribbon process using laser heating |
| USRE36156E (en) * | 1992-10-09 | 1999-03-23 | Astropower, Inc. | Columnar-grained polycrystalline solar cell and process of manufacture |
| JP4079548B2 (ja) * | 1999-04-30 | 2008-04-23 | 株式会社荏原製作所 | 結晶の連続引き上げ装置 |
| JP2001122696A (ja) * | 1999-10-21 | 2001-05-08 | Matsushita Seiko Co Ltd | リボンシリコンウェハの製造方法 |
| US6376797B1 (en) * | 2000-07-26 | 2002-04-23 | Ase Americas, Inc. | Laser cutting of semiconductor materials |
| US6423928B1 (en) * | 2000-10-12 | 2002-07-23 | Ase Americas, Inc. | Gas assisted laser cutting of thin and fragile materials |
| JP2003267716A (ja) * | 2002-03-13 | 2003-09-25 | Sharp Corp | 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法 |
| US7162874B2 (en) * | 2004-07-30 | 2007-01-16 | Hija Holding B.V. | Apparatus and method for gas turbine engine fuel/air premixer exit velocity control |
| CN100539206C (zh) * | 2005-09-23 | 2009-09-09 | 中芯国际集成电路制造(上海)有限公司 | 可以充分吸收更广泛波长太阳光的太阳能电池结构 |
| US7572334B2 (en) * | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| CN100416863C (zh) * | 2006-10-13 | 2008-09-03 | 中国科学院上海技术物理研究所 | 廉价多晶硅薄膜太阳电池 |
-
2008
- 2008-07-25 EP EP08782387A patent/EP2195475B1/en not_active Not-in-force
- 2008-07-25 ES ES08782387T patent/ES2399465T3/es active Active
- 2008-07-25 JP JP2010518410A patent/JP2010534610A/ja active Pending
- 2008-07-25 US US12/179,972 patent/US20090025787A1/en not_active Abandoned
- 2008-07-25 CN CN200880023563.5A patent/CN101688322B/zh not_active Expired - Fee Related
- 2008-07-25 MY MYPI20100162 patent/MY150483A/en unknown
- 2008-07-25 KR KR1020107002383A patent/KR20100039386A/ko not_active Ceased
- 2008-07-25 WO PCT/US2008/071179 patent/WO2009018145A1/en not_active Ceased
- 2008-07-25 CA CA002689519A patent/CA2689519A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CN101688322A (zh) | 2010-03-31 |
| EP2195475B1 (en) | 2012-11-14 |
| KR20100039386A (ko) | 2010-04-15 |
| US20090025787A1 (en) | 2009-01-29 |
| WO2009018145A1 (en) | 2009-02-05 |
| EP2195475A1 (en) | 2010-06-16 |
| CA2689519A1 (en) | 2009-02-05 |
| MY150483A (en) | 2014-01-30 |
| CN101688322B (zh) | 2013-03-27 |
| JP2010534610A (ja) | 2010-11-11 |
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