KR20100039386A - 웨이퍼/리본 결정 방법 및 장치 - Google Patents

웨이퍼/리본 결정 방법 및 장치 Download PDF

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Publication number
KR20100039386A
KR20100039386A KR1020107002383A KR20107002383A KR20100039386A KR 20100039386 A KR20100039386 A KR 20100039386A KR 1020107002383 A KR1020107002383 A KR 1020107002383A KR 20107002383 A KR20107002383 A KR 20107002383A KR 20100039386 A KR20100039386 A KR 20100039386A
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KR
South Korea
Prior art keywords
string
ribbon
edge
edges
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107002383A
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English (en)
Korean (ko)
Inventor
앤드류 가보
Original Assignee
에버그린 솔라, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에버그린 솔라, 인크. filed Critical 에버그린 솔라, 인크.
Publication of KR20100039386A publication Critical patent/KR20100039386A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Silicon Compounds (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020107002383A 2007-07-27 2008-07-25 웨이퍼/리본 결정 방법 및 장치 Ceased KR20100039386A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US95243507P 2007-07-27 2007-07-27
US60/952,435 2007-07-27

Publications (1)

Publication Number Publication Date
KR20100039386A true KR20100039386A (ko) 2010-04-15

Family

ID=39791565

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107002383A Ceased KR20100039386A (ko) 2007-07-27 2008-07-25 웨이퍼/리본 결정 방법 및 장치

Country Status (9)

Country Link
US (1) US20090025787A1 (enExample)
EP (1) EP2195475B1 (enExample)
JP (1) JP2010534610A (enExample)
KR (1) KR20100039386A (enExample)
CN (1) CN101688322B (enExample)
CA (1) CA2689519A1 (enExample)
ES (1) ES2399465T3 (enExample)
MY (1) MY150483A (enExample)
WO (1) WO2009018145A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101443888B (zh) * 2006-03-13 2011-03-16 内诺格雷姆公司 薄硅或者锗片以及由薄片形成的光电池
US20120164379A1 (en) * 2010-12-22 2012-06-28 Evergreen Solar, Inc. Wide Sheet Wafer
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US10584592B2 (en) * 2015-11-23 2020-03-10 United Technologies Corporation Platform for an airfoil having bowed sidewalls

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
US4689109A (en) * 1980-12-11 1987-08-25 Sachs Emanuel M String stabilized ribbon growth a method for seeding same
FR2516708A1 (fr) 1981-11-13 1983-05-20 Comp Generale Electricite Procede de fabrication de silicium polycristallin pour photopiles solaires
US4711695A (en) * 1983-05-19 1987-12-08 Mobil Solar Energy Corporation Apparatus for and method of making crystalline bodies
JPS62108797A (ja) 1985-11-07 1987-05-20 Toshiba Corp 帯状結晶製造装置
JPS62123092A (ja) * 1985-11-21 1987-06-04 Toshiba Corp 平板状シリコン結晶の成長装置
US5122504A (en) * 1990-02-27 1992-06-16 The Board Of Trustees Of The Leland Stanford Junior University Superconducting ribbon process using laser heating
USRE36156E (en) * 1992-10-09 1999-03-23 Astropower, Inc. Columnar-grained polycrystalline solar cell and process of manufacture
JP4079548B2 (ja) * 1999-04-30 2008-04-23 株式会社荏原製作所 結晶の連続引き上げ装置
JP2001122696A (ja) * 1999-10-21 2001-05-08 Matsushita Seiko Co Ltd リボンシリコンウェハの製造方法
US6376797B1 (en) * 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
US6423928B1 (en) * 2000-10-12 2002-07-23 Ase Americas, Inc. Gas assisted laser cutting of thin and fragile materials
JP2003267716A (ja) * 2002-03-13 2003-09-25 Sharp Corp 多結晶半導体基板製造装置およびその装置を用いる多結晶半導体基板の製造方法
US7162874B2 (en) * 2004-07-30 2007-01-16 Hija Holding B.V. Apparatus and method for gas turbine engine fuel/air premixer exit velocity control
CN100539206C (zh) * 2005-09-23 2009-09-09 中芯国际集成电路制造(上海)有限公司 可以充分吸收更广泛波长太阳光的太阳能电池结构
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
CN100416863C (zh) * 2006-10-13 2008-09-03 中国科学院上海技术物理研究所 廉价多晶硅薄膜太阳电池

Also Published As

Publication number Publication date
CN101688322A (zh) 2010-03-31
EP2195475B1 (en) 2012-11-14
US20090025787A1 (en) 2009-01-29
WO2009018145A1 (en) 2009-02-05
EP2195475A1 (en) 2010-06-16
CA2689519A1 (en) 2009-02-05
MY150483A (en) 2014-01-30
ES2399465T3 (es) 2013-04-01
CN101688322B (zh) 2013-03-27
JP2010534610A (ja) 2010-11-11

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