JP2010533633A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2010533633A5 JP2010533633A5 JP2010516072A JP2010516072A JP2010533633A5 JP 2010533633 A5 JP2010533633 A5 JP 2010533633A5 JP 2010516072 A JP2010516072 A JP 2010516072A JP 2010516072 A JP2010516072 A JP 2010516072A JP 2010533633 A5 JP2010533633 A5 JP 2010533633A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- sic
- deposited
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 19
- 238000005229 chemical vapour deposition Methods 0.000 claims 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical group C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 claims 2
- 239000002243 precursor Substances 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 238000010000 carbonizing Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/826,278 US7888248B2 (en) | 2007-07-13 | 2007-07-13 | Method of producing large area SiC substrates |
| US11/826,278 | 2007-07-13 | ||
| PCT/US2008/008579 WO2009011816A1 (en) | 2007-07-13 | 2008-07-14 | Method of producing large area sic substrates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010533633A JP2010533633A (ja) | 2010-10-28 |
| JP2010533633A5 true JP2010533633A5 (https=) | 2011-09-01 |
| JP5651467B2 JP5651467B2 (ja) | 2015-01-14 |
Family
ID=40252349
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010516072A Active JP5651467B2 (ja) | 2007-07-13 | 2008-07-14 | 大領域ＳｉＣ基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7888248B2 (https=) |
| EP (1) | EP2174357A4 (https=) |
| JP (1) | JP5651467B2 (https=) |
| WO (1) | WO2009011816A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888248B2 (en) * | 2007-07-13 | 2011-02-15 | Northrop Grumman Systems Corporation | Method of producing large area SiC substrates |
| US20090220801A1 (en) * | 2008-02-29 | 2009-09-03 | Brian Wagner | Method and apparatus for growth of high purity 6h-sic single crystal |
| US8189364B2 (en) | 2008-12-17 | 2012-05-29 | Qs Semiconductor Australia Pty Ltd. | Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory |
| US20110042685A1 (en) * | 2009-08-18 | 2011-02-24 | Qs Semiconductor Australia Pty Ltd | Substrates and methods of fabricating epitaxial silicon carbide structures with sequential emphasis |
| US20110272707A1 (en) * | 2010-05-06 | 2011-11-10 | Qs Semiconductor Australia Pty Ltd | Substrates and methods of forming film structures to facilitate silicon carbide epitaxy |
| JP5304733B2 (ja) * | 2010-06-10 | 2013-10-02 | 住友金属鉱山株式会社 | 誘電体膜を有する金属ベース層付耐熱性樹脂フィルムと金属膜付耐熱性樹脂フィルムの各製造方法および誘電体膜を有する金属ベース層付耐熱性樹脂フィルムの製造装置 |
| JP2014004700A (ja) * | 2012-06-22 | 2014-01-16 | Kyushu Institute Of Technology | 金属表面の加飾加工方法 |
| RU2521142C2 (ru) * | 2012-09-21 | 2014-06-27 | Общество с ограниченной ответственностью "СИКЛАБ" | Способ получения гетероэпитаксиальных пленок карбида кремния на кремниевой подложке |
| US20160194753A1 (en) * | 2012-12-27 | 2016-07-07 | Showa Denko K.K. | SiC-FILM FORMATION DEVICE AND METHOD FOR PRODUCING SiC FILM |
| JP2015159212A (ja) | 2014-02-25 | 2015-09-03 | 東京エレクトロン株式会社 | カーボンを含むシリコン膜の形成方法、及び、形成装置 |
| JP6488607B2 (ja) * | 2014-09-22 | 2019-03-27 | 株式会社Sumco | 単結晶ＳｉＣウェーハの製造方法 |
| GB2534357B (en) * | 2015-01-14 | 2020-02-19 | Anvil Semiconductors Ltd | Wafer bow reduction |
| JP2015145536A (ja) * | 2015-03-24 | 2015-08-13 | セイコーエプソン株式会社 | 立方晶炭化珪素膜の製造方法 |
| US10801108B2 (en) | 2017-08-28 | 2020-10-13 | Raytheon Technologies Corporation | Method for fabricating ceramic matrix composite components |
| CN114318526A (zh) * | 2021-09-18 | 2022-04-12 | 东莞市中镓半导体科技有限公司 | 氮化镓单晶上高阻碳化硅薄膜衬底及其制作方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63103893A (ja) | 1986-10-20 | 1988-05-09 | Sanyo Electric Co Ltd | ６Ｈ−ＳｉＣ基板の製造方法 |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| US6117233A (en) | 1995-02-07 | 2000-09-12 | Max-Planck-Gesellschaft Zur Forderung De | Formation of single-crystal thin SiC films |
| JPH09260289A (ja) * | 1996-03-19 | 1997-10-03 | Nippon Steel Corp | 化合物半導体単結晶の成長方法 |
| US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| US6328796B1 (en) | 1999-02-01 | 2001-12-11 | The United States Of America As Represented By The Secretary Of The Navy | Single-crystal material on non-single-crystalline substrate |
| JP3700999B2 (ja) * | 1999-03-17 | 2005-09-28 | 株式会社東北テクノアーチ | シリコンカーバイト単結晶薄膜の形成方法 |
| JP2002220299A (ja) * | 2001-01-19 | 2002-08-09 | Hoya Corp | 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料 |
| JP2003073806A (ja) * | 2001-09-07 | 2003-03-12 | National Institute Of Advanced Industrial & Technology | ＳｉＣ薄膜の形成方法 |
| US20040129200A1 (en) * | 2001-09-26 | 2004-07-08 | John Kouvetakis | Active electronic devices based on gallium nitride and its alloys grown on silicon substrates with buffer layers of SiCAIN |
| KR20040058206A (ko) | 2001-10-16 | 2004-07-03 | 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 | 4원 광 밴드갭 반도체의 저온 에피택셜 성장 |
| JP4214806B2 (ja) * | 2003-03-25 | 2009-01-28 | 株式会社島津製作所 | スパッタリング装置 |
| JP2006196631A (ja) * | 2005-01-13 | 2006-07-27 | Hitachi Ltd | 半導体装置及びその製造方法 |
| US7078326B1 (en) * | 2005-01-19 | 2006-07-18 | Marsh Eugene P | Nucleation method for atomic layer deposition of cobalt on bare silicon during the formation of a semiconductor device |
| JP4913375B2 (ja) * | 2005-08-08 | 2012-04-11 | 昭和電工株式会社 | 半導体素子の製造方法 |
| US7888248B2 (en) * | 2007-07-13 | 2011-02-15 | Northrop Grumman Systems Corporation | Method of producing large area SiC substrates |
-
2007
- 2007-07-13 US US11/826,278 patent/US7888248B2/en active Active
-
2008
- 2008-07-14 WO PCT/US2008/008579 patent/WO2009011816A1/en not_active Ceased
- 2008-07-14 JP JP2010516072A patent/JP5651467B2/ja active Active
- 2008-07-14 EP EP08780165.0A patent/EP2174357A4/en not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2010533633A5 (https=) | ||
| US9048092B2 (en) | Process for preparing graphene based on metal film-assisted annealing and the reaction with Cl2 | |
| CN105161578B (zh) | Si衬底上GaN薄膜的生长方法及复合GaN薄膜 | |
| US20110117372A1 (en) | Graphene or graphite thin film, manufacturing method thereof, thin film structure and electronic device | |
| CN104045079A (zh) | 在蓝宝石与外延金属界面外延生长石墨烯的方法 | |
| CN115838971B (zh) | 氧化镓薄膜及其制备方法 | |
| CN103794469A (zh) | 一种氮化镓薄膜层的制备方法及衬底 | |
| CN112309832B (zh) | 可转移氧化镓单晶薄膜的制备方法 | |
| CN106868472B (zh) | 一种氮化物外延片的生长方法及氮化镓激光器 | |
| CN103606514B (zh) | 基于GaN衬底CVD外延生长石墨烯的化学腐蚀转移方法 | |
| CN108428618B (zh) | 基于石墨烯插入层结构的氮化镓生长方法 | |
| CN110828291A (zh) | 基于单晶金刚石衬底的GaN/AlGaN异质结材料及其制备方法 | |
| CN104313684A (zh) | 一种制备六方氮化硼二维原子晶体的方法 | |
| CN103227194B (zh) | 一种大尺寸石墨烯堆叠结构晶圆及其制备方法 | |
| CN106504980A (zh) | 一种氮化铝单晶薄膜的制备方法 | |
| CN102653401B (zh) | 基于Ni膜退火的结构化石墨烯制备方法 | |
| CN108461386B (zh) | 一种含硅量子点多层膜及其制备方法 | |
| CN103741221A (zh) | 利用六方氮化硼纳米片生长高质量氮化镓晶体的方法 | |
| WO2011022519A1 (en) | Substrates and methods of fabricating doped epitaxial silicon carbide structures with sequential emphasis | |
| CN105129785B (zh) | 一种绝缘体上石墨烯的制备方法 | |
| CN110875170B (zh) | 基于氮化硼中间层远程外延生长二硫化铪的方法 | |
| CN109081332B (zh) | 石墨烯纳米图形化蓝宝石衬底及其制备方法 | |
| JP6927429B2 (ja) | ＳｉＣエピタキシャル基板の製造方法 | |
| CN104060322A (zh) | 一种大尺寸原子层厚六方氮化硼单晶的制备方法 | |
| CN102718207A (zh) | 基于Cu膜退火和Cl2反应的结构化石墨烯制备方法 |