JP2010527794A5 - - Google Patents

Download PDF

Info

Publication number
JP2010527794A5
JP2010527794A5 JP2010508817A JP2010508817A JP2010527794A5 JP 2010527794 A5 JP2010527794 A5 JP 2010527794A5 JP 2010508817 A JP2010508817 A JP 2010508817A JP 2010508817 A JP2010508817 A JP 2010508817A JP 2010527794 A5 JP2010527794 A5 JP 2010527794A5
Authority
JP
Japan
Prior art keywords
bubbler
carrier gas
pressure
introducing
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010508817A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010527794A (ja
Filing date
Publication date
Priority claimed from DE102007024266A external-priority patent/DE102007024266A1/de
Application filed filed Critical
Publication of JP2010527794A publication Critical patent/JP2010527794A/ja
Publication of JP2010527794A5 publication Critical patent/JP2010527794A5/ja
Pending legal-status Critical Current

Links

JP2010508817A 2007-05-23 2008-05-19 プロセスガスの濃度制御方法 Pending JP2010527794A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024266A DE102007024266A1 (de) 2007-05-23 2007-05-23 Verfahren zur Steuerung der Prozessgaskonzentration
PCT/EP2008/056104 WO2008142043A1 (de) 2007-05-23 2008-05-19 Verfahren zur steuerung der prozessgaskonzentration

Publications (2)

Publication Number Publication Date
JP2010527794A JP2010527794A (ja) 2010-08-19
JP2010527794A5 true JP2010527794A5 (enExample) 2011-06-02

Family

ID=39637712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010508817A Pending JP2010527794A (ja) 2007-05-23 2008-05-19 プロセスガスの濃度制御方法

Country Status (8)

Country Link
US (1) US20100215853A1 (enExample)
EP (1) EP2150634A1 (enExample)
JP (1) JP2010527794A (enExample)
KR (1) KR20100030620A (enExample)
CN (1) CN101688304A (enExample)
DE (1) DE102007024266A1 (enExample)
TW (1) TW200902132A (enExample)
WO (1) WO2008142043A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009012200A1 (de) * 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
JP5884448B2 (ja) * 2011-12-01 2016-03-15 富士電機株式会社 はんだ接合装置およびはんだ接合方法
DE102012021527A1 (de) 2012-10-31 2014-04-30 Dockweiler Ag Vorrichtung zur Erzeugung eines Gasgemisches
DE102024107217A1 (de) 2024-03-13 2025-09-18 Pink Gmbh Thermosysteme Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5249733A (en) * 1992-07-16 1993-10-05 At&T Bell Laboratories Solder self-alignment methods
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
WO1996012048A2 (en) * 1994-10-11 1996-04-25 Gelest, Inc. Conformal titanium-based films and method for their preparation
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
TW584611B (en) * 1999-06-03 2004-04-21 Shinetsu Chemical Co Apparatus for manufacturing glass base material and a method for manufacturing glass base material
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Similar Documents

Publication Publication Date Title
TW200643996A (en) Method of film formation, film formation apparatus, permanent magnet, and process for producing permanent magnet
TW200720454A (en) Vapor deposition apparatus and method
JP2014127702A5 (ja) 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム
WO2008078503A1 (ja) 成膜装置および成膜方法
WO2010045538A3 (en) Methods and apparatus for rapidly responsive heat control in plasma processing devices
TW200943456A (en) Semiconductor processing system including vaporizer and method for using same
TW200745375A (en) Apparatus and method for controlling the surface temperature of a substrate in a process chamber
JP2010161350A5 (ja) 半導体装置の製造方法及び基板処理装置
WO2009076309A3 (en) Methods structures and apparatus to provide group via and ia materials for solar cell absorber formation
JP2011252221A5 (enExample)
JP2013545275A5 (enExample)
WO2008149844A1 (ja) 成膜方法及び成膜装置
WO2012150763A3 (ko) 연속적인 열처리 화학 기상 증착 방법을 이용한 고품질 그래핀 제조 방법
WO2009136019A3 (fr) Dispositif et procede de traitement chimique en phase vapeur
WO2009038168A1 (ja) 成膜装置および成膜方法
WO2012175334A3 (de) Verfahren und vorrichtung zum abscheiden
JP2010527794A5 (enExample)
PH12018501841B1 (en) Method for manufacturing black plated steel sheet, apparatus for manufacturing black plated steel sheet, and system for manufacturing black plated steel sheet
DE112007002897A5 (de) Vakuumbeschichtungsverfahren und Anordnung zur Durchführung des Verfahrens
JP2015510260A5 (enExample)
TW201130055A (en) Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device
TW200739727A (en) Semiconductor processing system and vaporizer
WO2015038267A3 (en) Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition
WO2012112334A3 (en) Method of operating filament assisted chemical vapor deposition system
JP2011166060A5 (ja) 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム