KR20100030620A - 공정 가스 농도를 제어하기 위한 방법 - Google Patents

공정 가스 농도를 제어하기 위한 방법 Download PDF

Info

Publication number
KR20100030620A
KR20100030620A KR1020097026555A KR20097026555A KR20100030620A KR 20100030620 A KR20100030620 A KR 20100030620A KR 1020097026555 A KR1020097026555 A KR 1020097026555A KR 20097026555 A KR20097026555 A KR 20097026555A KR 20100030620 A KR20100030620 A KR 20100030620A
Authority
KR
South Korea
Prior art keywords
bubbler
carrier gas
concentration
process gas
gas concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097026555A
Other languages
English (en)
Korean (ko)
Inventor
한스 울리히 뵐러
롤프 뮐러
로베르트 미하엘 하르퉁
Original Assignee
쎈트로테름 서멀 솔루션즈 게엠베하 운트 콤파니 카게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쎈트로테름 서멀 솔루션즈 게엠베하 운트 콤파니 카게 filed Critical 쎈트로테름 서멀 솔루션즈 게엠베하 운트 콤파니 카게
Publication of KR20100030620A publication Critical patent/KR20100030620A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020097026555A 2007-05-23 2008-05-19 공정 가스 농도를 제어하기 위한 방법 Withdrawn KR20100030620A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024266.4 2007-05-23
DE102007024266A DE102007024266A1 (de) 2007-05-23 2007-05-23 Verfahren zur Steuerung der Prozessgaskonzentration

Publications (1)

Publication Number Publication Date
KR20100030620A true KR20100030620A (ko) 2010-03-18

Family

ID=39637712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097026555A Withdrawn KR20100030620A (ko) 2007-05-23 2008-05-19 공정 가스 농도를 제어하기 위한 방법

Country Status (8)

Country Link
US (1) US20100215853A1 (enExample)
EP (1) EP2150634A1 (enExample)
JP (1) JP2010527794A (enExample)
KR (1) KR20100030620A (enExample)
CN (1) CN101688304A (enExample)
DE (1) DE102007024266A1 (enExample)
TW (1) TW200902132A (enExample)
WO (1) WO2008142043A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009012200A1 (de) * 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
JP5884448B2 (ja) * 2011-12-01 2016-03-15 富士電機株式会社 はんだ接合装置およびはんだ接合方法
DE102012021527A1 (de) 2012-10-31 2014-04-30 Dockweiler Ag Vorrichtung zur Erzeugung eines Gasgemisches
DE102024107217A1 (de) 2024-03-13 2025-09-18 Pink Gmbh Thermosysteme Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
US5249733A (en) * 1992-07-16 1993-10-05 At&T Bell Laboratories Solder self-alignment methods
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
AU4001395A (en) * 1994-10-11 1996-05-06 Gelest, Inc. Conformal titanium-based films and method for their preparation
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
US6698240B1 (en) * 1999-06-03 2004-03-02 Shin-Etsu Chemical Co., Ltd. Apparatus for manufacturing glass base material and a method for manufacturing glass base material
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Also Published As

Publication number Publication date
WO2008142043A1 (de) 2008-11-27
DE102007024266A1 (de) 2008-11-27
EP2150634A1 (de) 2010-02-10
US20100215853A1 (en) 2010-08-26
TW200902132A (en) 2009-01-16
CN101688304A (zh) 2010-03-31
JP2010527794A (ja) 2010-08-19
TWI372650B (enExample) 2012-09-21

Similar Documents

Publication Publication Date Title
JP5889971B2 (ja) 安定した先駆物質供給のための泡供給システム
KR101691374B1 (ko) 가스 전달 방법 및 장치
KR102158779B1 (ko) 반도체 처리 챔버에 과산화수소를 전달하는 방법 및 시스템
JP6503293B2 (ja) 連続蒸留式トリクロロシラン気化供給装置および連続蒸留式トリクロロシランガス気化方法
KR20100030620A (ko) 공정 가스 농도를 제어하기 위한 방법
JP3352751B2 (ja) 液流を気流に変換する方法及び装置
WO2005020304A1 (ja) 薄膜成膜装置
JP3359474B2 (ja) 横型熱処理装置
JP2796975B2 (ja) 液体原料気化装置
KR100483434B1 (ko) 반도체장치제조설비
US20060143937A1 (en) Method for drying substrates
KR950007197B1 (ko) 수증기의 공급장치 및 그 제어방법
JP5198426B2 (ja) 洗浄装置及びオゾン水生成装置
CN1242248A (zh) 连续的气体饱和系统及方法
JP2010219145A (ja) 成膜装置
JP2021146223A (ja) トリメチルアルミニウムの処理方法
RU2142327C1 (ru) Способ абсорбции газов жидкостями
JP2007027567A (ja) プラズマ処理装置
JP2005264305A (ja) 雰囲気ガスの加湿方法及びその装置
KR20250077435A (ko) 개시제를 이용한 화학기상증착 장치 및 이를 이용한 고분자 유기 박막 제조방법
JPH04218675A (ja) 気化器
KR20220116160A (ko) 가스 공급 방법, 기판 처리 방법 및 가스 공급 장치
JP2005039034A (ja) 気化供給装置及び気化供給方法
JP2009260159A5 (ja) 基板処理装置および半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20091218

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid