WO2008142043A1 - Verfahren zur steuerung der prozessgaskonzentration - Google Patents

Verfahren zur steuerung der prozessgaskonzentration Download PDF

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Publication number
WO2008142043A1
WO2008142043A1 PCT/EP2008/056104 EP2008056104W WO2008142043A1 WO 2008142043 A1 WO2008142043 A1 WO 2008142043A1 EP 2008056104 W EP2008056104 W EP 2008056104W WO 2008142043 A1 WO2008142043 A1 WO 2008142043A1
Authority
WO
WIPO (PCT)
Prior art keywords
bubbler
carrier gas
concentration
medium
controlling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2008/056104
Other languages
German (de)
English (en)
French (fr)
Inventor
Hans Ulrich Völler
Rolf Müller
Robert Michael Hartung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Thermal Solutions GmbH and Co KG
Original Assignee
Centrotherm Thermal Solutions GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Thermal Solutions GmbH and Co KG filed Critical Centrotherm Thermal Solutions GmbH and Co KG
Priority to JP2010508817A priority Critical patent/JP2010527794A/ja
Priority to US12/601,311 priority patent/US20100215853A1/en
Priority to EP08750339A priority patent/EP2150634A1/de
Priority to CN200880019517A priority patent/CN101688304A/zh
Publication of WO2008142043A1 publication Critical patent/WO2008142043A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the invention relates to a method for controlling the process gas concentration for the treatment of substrates in a process space, in which a liquid is vaporized by means of hin miceite- ter bubbles of a carrier gas in a bubbler.
  • bubblers which mainly consist of a closed container into which the liquid to be evaporated has been introduced.
  • the liquids to be evaporated may be of any type, e.g. an acid with a given concentration.
  • the liquid may be formic acid (HCOOH) in different concentrations.
  • a carrier gas is introduced into the lowermost region of the container via a nozzle rod having a multiplicity of openings. Suitable carrier gases are, for example, N2, N2H2, H2, etc., or else inert gases.
  • the carrier gas then rises bubble-shaped in the bubbler through the liquid and takes parts of the liquid in vapor form. This resulting carrier gas / vapor mixture is then supplied from the container to the process room.
  • the gas bubbles absorb the vaporized medium until a relative humidity of 100% is reached.
  • concentration here depends on the pressure in the bubbler and the temperature, which may also be at room temperature.
  • the pressure is controlled by a pressure reducer.
  • the invention is based on the object of providing an easy-to-implement method for controlling the process gas concentration.
  • the object underlying the invention is achieved in a method of the type mentioned by establishing a predetermined constant internal pressure in the bubbler and subsequent introduction of the carrier gas in the bubbler with simultaneous temperature control of the medium to be evaporated within the bubbler for setting a predetermined vapor pressure.
  • This surprisingly easy to implement method allows precise control of the concentration of the vaporized medium in the carrier gas.
  • the temperature in the bubbler for adjusting the concentration of the medium in the carrier gas to different process conditions without interrupting the supply of the carrier gas in the bubbler is changed continuously.
  • the associated drawing figure shows a schematic representation of a bubbler for carrying out the inventive Procedure.
  • the bubbler 1 consists of a closable container which is surrounded by a cooling / heating jacket 2.
  • the bubbler 1 is connected to a supply 3 for a carrier gas, which ends inside the bubbler 1 in the bottom area in a nozzle bar 4 which is provided with a plurality of nozzles for generating gas bubbles.
  • the rising gas bubbles are shown schematically as arrows 5. These gas bubbles rise through the introduced into the bubbler 1 liquid medium 6 and are then passed through a piping 7 in a process space, not shown.
  • the cooling / heating jacket 2 is connected to a cooling / heating device 8 for temperature control of the liquid medium 6 in the bubbler 1.
  • a pressure reducer 9 with which the pressure in the bubbler 1 can be kept constant at a predetermined value.
  • N2, N2H2, H2 is used as the carrier gas.
  • the invention is equally feasible with other carrier gases.
  • formic acid (HCOOH) is used as a reducing medium for oxide layers, e.g. used on surfaces to be soldered together.
  • the control of the concentration of the evaporated medium 6 in the carrier gas by adjusting a predetermined / pre-calculated temperature by means of the cooling / heating device 8 at a constant pressure in the bubbler.
  • the temperature in the bubbler 1 can be at constant pressure in the bubbler 1, the vapor pressure of the medium change continuously.
  • the concentration of the vaporized medium in the carrier gas in a wide range can be controlled in a particularly simple manner, thereby simultaneously a simple process optimization in the Treatment of substrates is made possible.
  • the term substrate should also be understood to mean objects or surfaces to be soldered together.
  • the piping 7 can additionally be provided with a pipe tracing heater 10 up to the feed point into the process space.
  • This pipe trace heating 10 is connected to the cooling / heating device 8, so that the temperature of the piping can be set to the same temperature as in the bubbler 1.
  • the method according to the invention can advantageously be used for reflow soldering processes in a reflow soldering furnace, not shown, in which formic acid is introduced into the process space at a predetermined concentration.
  • the formic acid serves as a reducing medium for oxide layers on the partners to be soldered together.

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
PCT/EP2008/056104 2007-05-23 2008-05-19 Verfahren zur steuerung der prozessgaskonzentration Ceased WO2008142043A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010508817A JP2010527794A (ja) 2007-05-23 2008-05-19 プロセスガスの濃度制御方法
US12/601,311 US20100215853A1 (en) 2007-05-23 2008-05-19 Method for controlling process gas concentration
EP08750339A EP2150634A1 (de) 2007-05-23 2008-05-19 Verfahren zur steuerung der prozessgaskonzentration
CN200880019517A CN101688304A (zh) 2007-05-23 2008-05-19 控制生产气体浓度的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024266.4 2007-05-23
DE102007024266A DE102007024266A1 (de) 2007-05-23 2007-05-23 Verfahren zur Steuerung der Prozessgaskonzentration

Publications (1)

Publication Number Publication Date
WO2008142043A1 true WO2008142043A1 (de) 2008-11-27

Family

ID=39637712

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/056104 Ceased WO2008142043A1 (de) 2007-05-23 2008-05-19 Verfahren zur steuerung der prozessgaskonzentration

Country Status (8)

Country Link
US (1) US20100215853A1 (enExample)
EP (1) EP2150634A1 (enExample)
JP (1) JP2010527794A (enExample)
KR (1) KR20100030620A (enExample)
CN (1) CN101688304A (enExample)
DE (1) DE102007024266A1 (enExample)
TW (1) TW200902132A (enExample)
WO (1) WO2008142043A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009012200A1 (de) * 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
JP5884448B2 (ja) * 2011-12-01 2016-03-15 富士電機株式会社 はんだ接合装置およびはんだ接合方法
DE102012021527A1 (de) 2012-10-31 2014-04-30 Dockweiler Ag Vorrichtung zur Erzeugung eines Gasgemisches
DE102024107217A1 (de) 2024-03-13 2025-09-18 Pink Gmbh Thermosysteme Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US5431733A (en) 1992-06-29 1995-07-11 Matsushita Electric Industrial Co., Ltd. Low vapor-pressure material feeding apparatus
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
US5249733A (en) * 1992-07-16 1993-10-05 At&T Bell Laboratories Solder self-alignment methods
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
AU4001395A (en) * 1994-10-11 1996-05-06 Gelest, Inc. Conformal titanium-based films and method for their preparation
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
US6698240B1 (en) * 1999-06-03 2004-03-02 Shin-Etsu Chemical Co., Ltd. Apparatus for manufacturing glass base material and a method for manufacturing glass base material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US5431733A (en) 1992-06-29 1995-07-11 Matsushita Electric Industrial Co., Ltd. Low vapor-pressure material feeding apparatus
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2150634A1

Also Published As

Publication number Publication date
KR20100030620A (ko) 2010-03-18
DE102007024266A1 (de) 2008-11-27
EP2150634A1 (de) 2010-02-10
US20100215853A1 (en) 2010-08-26
TW200902132A (en) 2009-01-16
CN101688304A (zh) 2010-03-31
JP2010527794A (ja) 2010-08-19
TWI372650B (enExample) 2012-09-21

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