JP2010527794A - プロセスガスの濃度制御方法 - Google Patents

プロセスガスの濃度制御方法 Download PDF

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Publication number
JP2010527794A
JP2010527794A JP2010508817A JP2010508817A JP2010527794A JP 2010527794 A JP2010527794 A JP 2010527794A JP 2010508817 A JP2010508817 A JP 2010508817A JP 2010508817 A JP2010508817 A JP 2010508817A JP 2010527794 A JP2010527794 A JP 2010527794A
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Japan
Prior art keywords
bubbler
carrier gas
temperature
medium
concentration control
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JP2010508817A
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English (en)
Japanese (ja)
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JP2010527794A5 (enExample
Inventor
フェラー・ハンス・ウルリヒ
ミュラー・ロルフ
ハルトゥング・ローベルト・ミヒャエル
Original Assignee
セントロターム・サーマル・ソルーションズ・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング・ウント・コンパニー・コマンデイトゲゼルシヤフト
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Publication of JP2010527794A publication Critical patent/JP2010527794A/ja
Publication of JP2010527794A5 publication Critical patent/JP2010527794A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2010508817A 2007-05-23 2008-05-19 プロセスガスの濃度制御方法 Pending JP2010527794A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007024266A DE102007024266A1 (de) 2007-05-23 2007-05-23 Verfahren zur Steuerung der Prozessgaskonzentration
PCT/EP2008/056104 WO2008142043A1 (de) 2007-05-23 2008-05-19 Verfahren zur steuerung der prozessgaskonzentration

Publications (2)

Publication Number Publication Date
JP2010527794A true JP2010527794A (ja) 2010-08-19
JP2010527794A5 JP2010527794A5 (enExample) 2011-06-02

Family

ID=39637712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010508817A Pending JP2010527794A (ja) 2007-05-23 2008-05-19 プロセスガスの濃度制御方法

Country Status (8)

Country Link
US (1) US20100215853A1 (enExample)
EP (1) EP2150634A1 (enExample)
JP (1) JP2010527794A (enExample)
KR (1) KR20100030620A (enExample)
CN (1) CN101688304A (enExample)
DE (1) DE102007024266A1 (enExample)
TW (1) TW200902132A (enExample)
WO (1) WO2008142043A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013111646A (ja) * 2011-12-01 2013-06-10 Fuji Electric Co Ltd ガス発生装置、はんだ接合装置およびはんだ接合方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009012200A1 (de) * 2009-03-11 2010-09-16 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle
DE102012021527A1 (de) 2012-10-31 2014-04-30 Dockweiler Ag Vorrichtung zur Erzeugung eines Gasgemisches
DE102024107217A1 (de) 2024-03-13 2025-09-18 Pink Gmbh Thermosysteme Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163869A (ja) * 1992-07-16 1994-06-10 American Teleph & Telegr Co <Att> はんだ自動整合結合方法
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276243A (en) * 1978-12-08 1981-06-30 Western Electric Company, Inc. Vapor delivery control system and method
JPS60211072A (ja) * 1984-04-06 1985-10-23 Matsushita Electric Ind Co Ltd 揮発性物質の気化装置
US4911101A (en) * 1988-07-20 1990-03-27 General Electric Company Metal organic molecular beam epitaxy (MOMBE) apparatus
US5227604A (en) * 1991-06-28 1993-07-13 Digital Equipment Corporation Atmospheric pressure gaseous-flux-assisted laser reflow soldering
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
WO1996012048A2 (en) * 1994-10-11 1996-04-25 Gelest, Inc. Conformal titanium-based films and method for their preparation
US6616767B2 (en) * 1997-02-12 2003-09-09 Applied Materials, Inc. High temperature ceramic heater assembly with RF capability
TW584611B (en) * 1999-06-03 2004-04-21 Shinetsu Chemical Co Apparatus for manufacturing glass base material and a method for manufacturing glass base material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06163869A (ja) * 1992-07-16 1994-06-10 American Teleph & Telegr Co <Att> はんだ自動整合結合方法
JPH07164141A (ja) * 1993-10-22 1995-06-27 Nippon Sanso Kk はんだ付け方法及び装置
US20050095859A1 (en) * 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013111646A (ja) * 2011-12-01 2013-06-10 Fuji Electric Co Ltd ガス発生装置、はんだ接合装置およびはんだ接合方法

Also Published As

Publication number Publication date
DE102007024266A1 (de) 2008-11-27
KR20100030620A (ko) 2010-03-18
US20100215853A1 (en) 2010-08-26
CN101688304A (zh) 2010-03-31
TW200902132A (en) 2009-01-16
WO2008142043A1 (de) 2008-11-27
EP2150634A1 (de) 2010-02-10
TWI372650B (enExample) 2012-09-21

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