JP2010509086A - パッシェン・スタッキングを用いた充電ガード - Google Patents
パッシェン・スタッキングを用いた充電ガード Download PDFInfo
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- JP2010509086A JP2010509086A JP2009537319A JP2009537319A JP2010509086A JP 2010509086 A JP2010509086 A JP 2010509086A JP 2009537319 A JP2009537319 A JP 2009537319A JP 2009537319 A JP2009537319 A JP 2009537319A JP 2010509086 A JP2010509086 A JP 2010509086A
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- trench
- electrode
- mems
- electrodes
- insulating layer
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
【選択図】図4
Description
12 基板;
14、16、18 電極;
20、22、24、66 絶縁層;
26、28 金属パッド;
30、32 支持構造;
34 ミラー
36、38、40 トレンチ
62 空気; 64窒素。
Claims (10)
- 基板に形成された第1および第2の電極と、
前記第1の電極と前記第2の電極の間に配置されたトレンチと、
前記第1の電極と前記第2の電極の間に形成され、前記トレンチの底面から突出する絶縁層と
を備える静電制御式微小電子機械システム(MEMS)デバイス。 - 前記トレンチの高さが前記トレンチの幅より大きい、請求項1に記載の静電制御式MEMSデバイス。
- 前記トレンチの前記底面からの、前記絶縁層の突出の高さが、前記絶縁層の幅より大きい、請求項1に記載の静電制御式MEMSデバイス。
- 前記基板がシリコン基板である、請求項1に記載の静電制御式MEMSデバイス。
- 前記絶縁層が二酸化ケイ素である、請求項4に記載の静電制御式MEMSデバイス。
- 前記導電性要素の上方で位置決めされたミラーをさらに備える、請求項1に記載の静電制御式MEMSデバイス。
- 前記基板に形成された第3の電極と、
前記第2の電極と前記第3の電極の間に配置された第2のトレンチと、
前記第2の電極と前記第3の電極の間に形成され、前記第2のトレンチの底面から突出する第2の絶縁層と をさらに備える、請求項1に記載の静電制御式MEMSデバイス。 - 前記第1および第2のトレンチが同じ寸法を特徴とし、各前記第1および第2のトレンチの高さが、前記第1および第2のトレンチのそれぞれの幅より大きい、請求項7に記載の静電制御式MEMSデバイス。
- 前記第1および第2の絶縁突出部が同じ寸法を特徴とし、各前記第1および第2の突出部の高さが、前記第1および第2の突出部のそれぞれの幅より大きい、請求項8に記載の静電制御式MEMSデバイス。
- 基板内で形成されたN個の電極と、
隣り合う電極の、異なる対の間に配置されたM個のトレンチと、
それぞれが前記M個のトレンチの異なる1つに関連付けられ、それぞれが、隣り合う電極の、異なる対の間に形成され、それぞれが、関連付けられたトレンチの底面から突出するM個の絶縁層と、
前記電極の下方で位置決めされた1つまたは複数のミラーと
を備える静電制御式微小電子機械システム(MEMS)デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/559,825 US7508572B2 (en) | 2006-11-14 | 2006-11-14 | Charging guard with paschen stacking |
US11/559,825 | 2006-11-14 | ||
PCT/US2007/084568 WO2008061097A2 (en) | 2006-11-14 | 2007-11-13 | Charging guard with paschen stacking |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010509086A true JP2010509086A (ja) | 2010-03-25 |
JP5113185B2 JP5113185B2 (ja) | 2013-01-09 |
Family
ID=39368919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009537319A Expired - Fee Related JP5113185B2 (ja) | 2006-11-14 | 2007-11-13 | パッシェン・スタッキングを用いた充電ガード |
Country Status (7)
Country | Link |
---|---|
US (1) | US7508572B2 (ja) |
EP (1) | EP2089753B1 (ja) |
JP (1) | JP5113185B2 (ja) |
CN (1) | CN101606096B (ja) |
CA (1) | CA2668956C (ja) |
HK (1) | HK1139742A1 (ja) |
WO (1) | WO2008061097A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013140838A (ja) * | 2011-12-28 | 2013-07-18 | Sumitomo Precision Prod Co Ltd | 半導体装置及びその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5547974B2 (ja) * | 2010-01-15 | 2014-07-16 | 住友精密工業株式会社 | 半導体装置及びその製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825967B1 (en) * | 2000-09-29 | 2004-11-30 | Calient Networks, Inc. | Shaped electrodes for micro-electro-mechanical-system (MEMS) devices to improve actuator performance and methods for fabricating the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5991079A (en) * | 1998-10-14 | 1999-11-23 | Eastman Kodak Company | Method of making a light modulator |
US6389189B1 (en) | 1998-10-23 | 2002-05-14 | Corning Incorporated | Fluid-encapsulated MEMS optical switch |
KR100348177B1 (ko) * | 2000-01-13 | 2002-08-09 | 조동일 | 단결정 실리콘의 마이크로머시닝 기법에서의 깊은 트렌치절연막을 이용한 절연 방법 |
US6693735B1 (en) * | 2001-07-30 | 2004-02-17 | Glimmerglass Networks, Inc. | MEMS structure with surface potential control |
US6717325B2 (en) * | 2002-03-06 | 2004-04-06 | Glimmerglass Networks, Inc. | Method and apparatus for actuation of a two-axis MEMS device using three actuation elements |
US6661069B1 (en) * | 2002-10-22 | 2003-12-09 | International Business Machines Corporation | Micro-electromechanical varactor with enhanced tuning range |
US6794230B2 (en) * | 2002-10-31 | 2004-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Approach to improve line end shortening |
CN1279386C (zh) * | 2003-05-26 | 2006-10-11 | 中国科学院上海微系统与信息技术研究所 | 压电驱动法布里-珀罗腔可调光学滤波器件及制作方法 |
-
2006
- 2006-11-14 US US11/559,825 patent/US7508572B2/en not_active Expired - Fee Related
-
2007
- 2007-11-13 CA CA2668956A patent/CA2668956C/en not_active Expired - Fee Related
- 2007-11-13 CN CN2007800423381A patent/CN101606096B/zh not_active Expired - Fee Related
- 2007-11-13 WO PCT/US2007/084568 patent/WO2008061097A2/en active Application Filing
- 2007-11-13 JP JP2009537319A patent/JP5113185B2/ja not_active Expired - Fee Related
- 2007-11-13 EP EP07864335.0A patent/EP2089753B1/en not_active Not-in-force
-
2010
- 2010-06-11 HK HK10105875.7A patent/HK1139742A1/xx not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825967B1 (en) * | 2000-09-29 | 2004-11-30 | Calient Networks, Inc. | Shaped electrodes for micro-electro-mechanical-system (MEMS) devices to improve actuator performance and methods for fabricating the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013140838A (ja) * | 2011-12-28 | 2013-07-18 | Sumitomo Precision Prod Co Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2089753A4 (en) | 2012-02-29 |
HK1139742A1 (en) | 2010-09-24 |
WO2008061097A3 (en) | 2008-07-10 |
CA2668956C (en) | 2010-11-09 |
CN101606096A (zh) | 2009-12-16 |
WO2008061097A2 (en) | 2008-05-22 |
CN101606096B (zh) | 2012-05-16 |
JP5113185B2 (ja) | 2013-01-09 |
EP2089753B1 (en) | 2016-01-06 |
US20080112038A1 (en) | 2008-05-15 |
CA2668956A1 (en) | 2008-05-22 |
US7508572B2 (en) | 2009-03-24 |
EP2089753A2 (en) | 2009-08-19 |
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