JP2010506341A5 - - Google Patents

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JP2010506341A5
JP2010506341A5 JP2009530815A JP2009530815A JP2010506341A5 JP 2010506341 A5 JP2010506341 A5 JP 2010506341A5 JP 2009530815 A JP2009530815 A JP 2009530815A JP 2009530815 A JP2009530815 A JP 2009530815A JP 2010506341 A5 JP2010506341 A5 JP 2010506341A5
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tunnel junction
magnetic layer
magnetic
magnetic tunnel
line
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JP2009530815A
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JP2010506341A (ja
JP5604107B2 (ja
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Priority claimed from PCT/EP2007/008702 external-priority patent/WO2008040561A2/en
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JP2009530815A 2006-10-06 2007-10-08 連想磁気抵抗ランダムアクセスメモリセルを提供するためのシステム及び方法 Expired - Fee Related JP5604107B2 (ja)

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Application Number Priority Date Filing Date Title
US82843806P 2006-10-06 2006-10-06
US60/828,438 2006-10-06
PCT/EP2007/008702 WO2008040561A2 (en) 2006-10-06 2007-10-08 System and method for providing content-addressable magnetoresistive random access memory cells

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JP2010506341A JP2010506341A (ja) 2010-02-25
JP2010506341A5 true JP2010506341A5 (cg-RX-API-DMAC7.html) 2010-08-12
JP5604107B2 JP5604107B2 (ja) 2014-10-08

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JP2009530815A Expired - Fee Related JP5604107B2 (ja) 2006-10-06 2007-10-08 連想磁気抵抗ランダムアクセスメモリセルを提供するためのシステム及び方法

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US (3) US7518897B2 (cg-RX-API-DMAC7.html)
EP (1) EP2070089B1 (cg-RX-API-DMAC7.html)
JP (1) JP5604107B2 (cg-RX-API-DMAC7.html)
TW (1) TWI449040B (cg-RX-API-DMAC7.html)
WO (1) WO2008040561A2 (cg-RX-API-DMAC7.html)

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