TWI449040B - 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 - Google Patents

用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 Download PDF

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Publication number
TWI449040B
TWI449040B TW096137428A TW96137428A TWI449040B TW I449040 B TWI449040 B TW I449040B TW 096137428 A TW096137428 A TW 096137428A TW 96137428 A TW96137428 A TW 96137428A TW I449040 B TWI449040 B TW I449040B
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Taiwan
Prior art keywords
magnetic
tunnel junction
magnetic layer
magnetization direction
line
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TW096137428A
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English (en)
Chinese (zh)
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TW200844997A (en
Inventor
Jean-Pierre Nozieres
Virgile Javerliac
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Crocus Technology Sa
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Publication of TW200844997A publication Critical patent/TW200844997A/zh
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Publication of TWI449040B publication Critical patent/TWI449040B/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW096137428A 2006-10-06 2007-10-05 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法 TWI449040B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82843806P 2006-10-06 2006-10-06

Publications (2)

Publication Number Publication Date
TW200844997A TW200844997A (en) 2008-11-16
TWI449040B true TWI449040B (zh) 2014-08-11

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Family Applications (1)

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TW096137428A TWI449040B (zh) 2006-10-06 2007-10-05 用於提供內容可定址的磁阻式隨機存取記憶體單元之系統及方法

Country Status (5)

Country Link
US (3) US7518897B2 (cg-RX-API-DMAC7.html)
EP (1) EP2070089B1 (cg-RX-API-DMAC7.html)
JP (1) JP5604107B2 (cg-RX-API-DMAC7.html)
TW (1) TWI449040B (cg-RX-API-DMAC7.html)
WO (1) WO2008040561A2 (cg-RX-API-DMAC7.html)

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Also Published As

Publication number Publication date
TW200844997A (en) 2008-11-16
US7894228B2 (en) 2011-02-22
EP2070089B1 (en) 2012-09-12
WO2008040561A3 (en) 2008-05-22
US7791917B2 (en) 2010-09-07
WO2008040561A2 (en) 2008-04-10
US20080084724A1 (en) 2008-04-10
EP2070089A2 (en) 2009-06-17
US7518897B2 (en) 2009-04-14
JP2010506341A (ja) 2010-02-25
US20090109719A1 (en) 2009-04-30
JP5604107B2 (ja) 2014-10-08
US20090213632A1 (en) 2009-08-27

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