JP5604107B2 - 連想磁気抵抗ランダムアクセスメモリセルを提供するためのシステム及び方法 - Google Patents

連想磁気抵抗ランダムアクセスメモリセルを提供するためのシステム及び方法 Download PDF

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JP5604107B2
JP5604107B2 JP2009530815A JP2009530815A JP5604107B2 JP 5604107 B2 JP5604107 B2 JP 5604107B2 JP 2009530815 A JP2009530815 A JP 2009530815A JP 2009530815 A JP2009530815 A JP 2009530815A JP 5604107 B2 JP5604107 B2 JP 5604107B2
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magnetic
tunnel junction
magnetic layer
line
magnetization direction
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JP2010506341A5 (cg-RX-API-DMAC7.html
JP2010506341A (ja
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ノジエール・ジャン−ピエール
ジャヴェルリアック・ヴィルジール
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クロッカス・テクノロジー・ソシエテ・アノニム
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/02—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using magnetic elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2009530815A 2006-10-06 2007-10-08 連想磁気抵抗ランダムアクセスメモリセルを提供するためのシステム及び方法 Expired - Fee Related JP5604107B2 (ja)

Applications Claiming Priority (3)

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US82843806P 2006-10-06 2006-10-06
US60/828,438 2006-10-06
PCT/EP2007/008702 WO2008040561A2 (en) 2006-10-06 2007-10-08 System and method for providing content-addressable magnetoresistive random access memory cells

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JP2010506341A JP2010506341A (ja) 2010-02-25
JP2010506341A5 JP2010506341A5 (cg-RX-API-DMAC7.html) 2010-08-12
JP5604107B2 true JP5604107B2 (ja) 2014-10-08

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US (3) US7518897B2 (cg-RX-API-DMAC7.html)
EP (1) EP2070089B1 (cg-RX-API-DMAC7.html)
JP (1) JP5604107B2 (cg-RX-API-DMAC7.html)
TW (1) TWI449040B (cg-RX-API-DMAC7.html)
WO (1) WO2008040561A2 (cg-RX-API-DMAC7.html)

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Publication number Publication date
TW200844997A (en) 2008-11-16
US7894228B2 (en) 2011-02-22
EP2070089B1 (en) 2012-09-12
WO2008040561A3 (en) 2008-05-22
US7791917B2 (en) 2010-09-07
WO2008040561A2 (en) 2008-04-10
US20080084724A1 (en) 2008-04-10
EP2070089A2 (en) 2009-06-17
TWI449040B (zh) 2014-08-11
US7518897B2 (en) 2009-04-14
JP2010506341A (ja) 2010-02-25
US20090109719A1 (en) 2009-04-30
US20090213632A1 (en) 2009-08-27

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