JP2010505223A - 基板保持装置 - Google Patents
基板保持装置 Download PDFInfo
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- JP2010505223A JP2010505223A JP2009529752A JP2009529752A JP2010505223A JP 2010505223 A JP2010505223 A JP 2010505223A JP 2009529752 A JP2009529752 A JP 2009529752A JP 2009529752 A JP2009529752 A JP 2009529752A JP 2010505223 A JP2010505223 A JP 2010505223A
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- substrate
- ion
- substrate holder
- ion beam
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Robotics (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【選択図】 図3
Description
Claims (13)
- イオン注入装置において注入中にイオンビームに対して露出される基板を保持するための基板ホルダーアセンブリにおいて、
第1の軸の周りに回転できるベースと、
上記ベースから基板ホルダーの設けられる端部まで延長する少なくとも2つの支持アームと、
を備え、
上記ベースの回転により、上記基板ホルダーが指定位置を取ることができ、上記少なくとも2つの支持アームは、回転軸から実質的に等しい距離だけ変位され且つ実質的に等しい分離角度だけ分離された点から延長して、上記ベースが上記分離角度に亘って回転されることにより、上記支持アームが指定位置の間に移動させられるようになっている、
基板ホルダーアセンブリ。 - 上記少なくとも2つの支持アームは、それらの長手方向軸の周りに回転可能とされている、請求項1に記載の基板ホルダーアセンブリ。
- 上記基板ホルダーの各々には、上記基板を支持するための支持表面が設けられており、上記支持表面は、その中心軸の周りに回転可能とされている、請求項1又は2に記載の基板ホルダーアセンブリ。
- 上記支持表面の中心軸は、上記支持アームの長手方向軸に対して実質的に直角である、請求項3に記載の基板ホルダーアセンブリ。
- 上記少なくとも2つの支持アームは、上記ベースからの各基板ホルダーの距離が変えられるように、それらの長手方向軸に沿って移動可能とされている、請求項1から4のうちのいずれか1項に記載の基板ホルダーアセンブリ。
- イオン源と、上記イオン源により生成されたイオンを、基板の注入のための処理チャンバへのイオンビームパスに沿って案内するように動作できる光学部品と、基板移送機構と、上記処理チャンバに基板を保持するように配置された請求項1に記載の基板ホルダーアセンブリと、を備え、少なくとも2つの上記支持アームは、上記イオンビームパスに対して実質的に直角に延長するようにされ、上記指定位置のうちの第1の指定位置は、上記基板ホルダーが上記イオンビーム内に面するように配設される位置に対応し、上記指定位置のうちの第2の指定位置は、上記基板ホルダーが上記イオンビームパスから外れて、上記基板移送機構と協働して、基板が上記基板ホルダー上に置かれたり上記基板ホルダーから取り外されたりするように配設される位置に対応しているイオン注入装置。
- 上記少なくとも2つの支持アームは、それらの長手方向軸の周りに回転可能とされている、請求項6に記載のイオン注入装置。
- 上記基板ホルダーの各々には、上記基板を支持するための支持表面が設けられており、上記支持表面は、その中心軸の周りに回転可能とされている、請求項6又は7に記載のイオン注入装置。
- 上記支持表面の中心軸は、上記支持アームの長手方向軸に対して実質的に直角である、請求項8に記載のイオン注入装置。
- 上記少なくとも2つの支持アームは、上記ベースからの各基板ホルダーの距離が変えられるように、それらの長手方向軸に沿って移動可能とされている、請求項6から9のうちのいずれか1項に記載のイオン注入装置。
- 上記ベースは、上記支持アームをその長手方向軸に沿って前後に走査するように動作できる関連走査ユニットを有する、請求項10に記載のイオン注入装置。
- 上記走査ユニットは、上記支持アームの長手方向軸及び上記イオンビームパスの両者に対して実質的に直角な方向において上記支持アームを走査するように動作できる、請求項11に記載のイオン注入装置。
- 上記走査ユニットは、基板が上記基板ホルダーにより保持されている時に上記基板に亘るラスタパターンを上記イオンビームが辿るように、上記支持アームを走査するように動作できる、請求項12に記載のイオン注入装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/527,724 | 2006-09-27 | ||
US11/527,724 US7777203B2 (en) | 2006-09-27 | 2006-09-27 | Substrate holding apparatus |
PCT/GB2007/003452 WO2008037953A1 (en) | 2006-09-27 | 2007-09-12 | Substrate holding apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010505223A true JP2010505223A (ja) | 2010-02-18 |
JP5324452B2 JP5324452B2 (ja) | 2013-10-23 |
Family
ID=38779652
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009529752A Expired - Fee Related JP5324452B2 (ja) | 2006-09-27 | 2007-09-12 | 基板保持装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7777203B2 (ja) |
JP (1) | JP5324452B2 (ja) |
KR (1) | KR101345686B1 (ja) |
CN (1) | CN101517726B (ja) |
TW (1) | TWI374484B (ja) |
WO (1) | WO2008037953A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013101898A (ja) * | 2011-10-17 | 2013-05-23 | Nissin Ion Equipment Co Ltd | エネルギー線照射装置及びワーク搬送機構 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080190364A1 (en) * | 2007-02-13 | 2008-08-14 | Applied Materials, Inc. | Substrate support assembly |
DE102007026847A1 (de) * | 2007-06-06 | 2008-12-11 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät und Verfahren zur Anwendung bei einem Teilchenstrahlgerät |
US7939424B2 (en) * | 2007-09-21 | 2011-05-10 | Varian Semiconductor Equipment Associates, Inc. | Wafer bonding activated by ion implantation |
WO2009154075A1 (ja) * | 2008-06-16 | 2009-12-23 | 東京エレクトロン株式会社 | 処理装置 |
US9009939B2 (en) * | 2009-06-05 | 2015-04-21 | Advanced Ion Beam Technology, Inc (Tw) | Method and system for moving wafer during scanning the wafer |
JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
DE102010041678B4 (de) * | 2010-09-29 | 2023-12-28 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät mit einem Probenträger |
WO2012167285A1 (en) | 2011-06-03 | 2012-12-06 | Tel Nexx, Inc. | Parallel single substrate processing system |
CN102539263A (zh) * | 2011-11-29 | 2012-07-04 | 南通大学 | 基于掩蔽处理技术的轻微磨损测量方法 |
JP2016143528A (ja) * | 2015-01-30 | 2016-08-08 | 株式会社日立ハイテクサイエンス | 試料搬送機構及び真空装置 |
CN104979152A (zh) * | 2015-07-28 | 2015-10-14 | 中国科学技术大学 | 一种离子注入设备 |
TWI658489B (zh) * | 2017-09-14 | 2019-05-01 | 南韓商吉佳藍科技股份有限公司 | 包括能夠旋轉之靜電吸盤之電漿基板處理裝置及利用其之基板處理方法 |
CN108172492A (zh) * | 2017-12-26 | 2018-06-15 | 德淮半导体有限公司 | 离子植入机及其载片回路和离子植入方法 |
Citations (5)
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JPS6254089A (ja) * | 1985-09-02 | 1987-03-09 | Hitachi Ltd | ウエハ自公転機構 |
JP2000353490A (ja) * | 1999-04-19 | 2000-12-19 | Applied Materials Inc | イオン注入装置 |
JP2001516151A (ja) * | 1997-09-10 | 2001-09-25 | オリオン イクウィプメント インコーポレイテッド | 真空チャンバ内でワークピースを制御する方法及び装置 |
JP2003045371A (ja) * | 2001-07-19 | 2003-02-14 | Applied Materials Inc | イオン注入装置の基板支持部材およびイオン注入装置 |
JP2005522844A (ja) * | 2002-04-10 | 2005-07-28 | アプライド マテリアルズ インコーポレイテッド | 可動部材の多方向走査及びそのためのイオンビーム監視構成体 |
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US5224809A (en) * | 1985-01-22 | 1993-07-06 | Applied Materials, Inc. | Semiconductor processing system with robotic autoloader and load lock |
EP2099061A3 (en) * | 1997-11-28 | 2013-06-12 | Mattson Technology, Inc. | Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing |
US20030197133A1 (en) * | 2002-04-23 | 2003-10-23 | Turner Norman L. | Method and apparatus for scanning a workpiece in a vacuum chamber |
GB2389958B (en) * | 2002-06-21 | 2005-09-07 | Applied Materials Inc | Multi directional mechanical scanning in an ion implanter |
US7049210B2 (en) * | 2002-09-23 | 2006-05-23 | Applied Materials, Inc. | Method of implanting a substrate and an ion implanter for performing the method |
US20050020077A1 (en) * | 2003-04-18 | 2005-01-27 | Applied Materials, Inc. | Formation of protection layer by dripping DI on wafer with high rotation to prevent stain formation from H2O2/H2SO4 chemical splash |
US7030395B2 (en) * | 2004-08-06 | 2006-04-18 | Axcelis Technologies, Inc. | Workpiece support structure for an ion beam implanter featuring spherical sliding seal vacuum feedthrough |
US9524896B2 (en) * | 2006-09-19 | 2016-12-20 | Brooks Automation Inc. | Apparatus and methods for transporting and processing substrates |
-
2006
- 2006-09-27 US US11/527,724 patent/US7777203B2/en active Active
-
2007
- 2007-09-12 WO PCT/GB2007/003452 patent/WO2008037953A1/en active Application Filing
- 2007-09-12 TW TW096134102A patent/TWI374484B/zh active
- 2007-09-12 KR KR1020097008514A patent/KR101345686B1/ko active IP Right Grant
- 2007-09-12 CN CN2007800359614A patent/CN101517726B/zh not_active Expired - Fee Related
- 2007-09-12 JP JP2009529752A patent/JP5324452B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6254089A (ja) * | 1985-09-02 | 1987-03-09 | Hitachi Ltd | ウエハ自公転機構 |
JP2001516151A (ja) * | 1997-09-10 | 2001-09-25 | オリオン イクウィプメント インコーポレイテッド | 真空チャンバ内でワークピースを制御する方法及び装置 |
JP2000353490A (ja) * | 1999-04-19 | 2000-12-19 | Applied Materials Inc | イオン注入装置 |
JP2003045371A (ja) * | 2001-07-19 | 2003-02-14 | Applied Materials Inc | イオン注入装置の基板支持部材およびイオン注入装置 |
JP2005522844A (ja) * | 2002-04-10 | 2005-07-28 | アプライド マテリアルズ インコーポレイテッド | 可動部材の多方向走査及びそのためのイオンビーム監視構成体 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013101898A (ja) * | 2011-10-17 | 2013-05-23 | Nissin Ion Equipment Co Ltd | エネルギー線照射装置及びワーク搬送機構 |
Also Published As
Publication number | Publication date |
---|---|
CN101517726A (zh) | 2009-08-26 |
TW200818281A (en) | 2008-04-16 |
KR20090074220A (ko) | 2009-07-06 |
JP5324452B2 (ja) | 2013-10-23 |
KR101345686B1 (ko) | 2013-12-30 |
CN101517726B (zh) | 2011-08-03 |
US20080073577A1 (en) | 2008-03-27 |
WO2008037953A1 (en) | 2008-04-03 |
US7777203B2 (en) | 2010-08-17 |
TWI374484B (en) | 2012-10-11 |
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