JP2010278166A - プラズマ処理用円環状部品、及びプラズマ処理装置 - Google Patents

プラズマ処理用円環状部品、及びプラズマ処理装置 Download PDF

Info

Publication number
JP2010278166A
JP2010278166A JP2009128355A JP2009128355A JP2010278166A JP 2010278166 A JP2010278166 A JP 2010278166A JP 2009128355 A JP2009128355 A JP 2009128355A JP 2009128355 A JP2009128355 A JP 2009128355A JP 2010278166 A JP2010278166 A JP 2010278166A
Authority
JP
Japan
Prior art keywords
plasma
groove
plasma processing
annular
focus ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009128355A
Other languages
English (en)
Japanese (ja)
Inventor
Koichi Hatta
浩一 八田
Hideki Mizuno
秀樹 水野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009128355A priority Critical patent/JP2010278166A/ja
Priority to CN2010101780500A priority patent/CN101901744B/zh
Priority to KR1020100048487A priority patent/KR20100128238A/ko
Priority to TW099116746A priority patent/TW201130395A/zh
Priority to US12/788,396 priority patent/US20100300622A1/en
Publication of JP2010278166A publication Critical patent/JP2010278166A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2009128355A 2009-05-27 2009-05-27 プラズマ処理用円環状部品、及びプラズマ処理装置 Pending JP2010278166A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009128355A JP2010278166A (ja) 2009-05-27 2009-05-27 プラズマ処理用円環状部品、及びプラズマ処理装置
CN2010101780500A CN101901744B (zh) 2009-05-27 2010-05-18 等离子处理用圆环状零件及等离子处理装置
KR1020100048487A KR20100128238A (ko) 2009-05-27 2010-05-25 플라즈마 처리용 원환 형상 부품 및 플라즈마 처리 장치
TW099116746A TW201130395A (en) 2009-05-27 2010-05-26 Circular ring-shaped member for plasma process and plasma processing apparatus
US12/788,396 US20100300622A1 (en) 2009-05-27 2010-05-27 Circular ring-shaped member for plasma process and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009128355A JP2010278166A (ja) 2009-05-27 2009-05-27 プラズマ処理用円環状部品、及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
JP2010278166A true JP2010278166A (ja) 2010-12-09

Family

ID=43218877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009128355A Pending JP2010278166A (ja) 2009-05-27 2009-05-27 プラズマ処理用円環状部品、及びプラズマ処理装置

Country Status (5)

Country Link
US (1) US20100300622A1 (ko)
JP (1) JP2010278166A (ko)
KR (1) KR20100128238A (ko)
CN (1) CN101901744B (ko)
TW (1) TW201130395A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019239893A1 (ja) * 2018-06-12 2019-12-19 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
JP2020161801A (ja) * 2019-03-22 2020-10-01 Toto株式会社 静電チャック
JP2021153122A (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 エッジリング、基板支持台、プラズマ処理システム及びエッジリングの交換方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5973731B2 (ja) * 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
US8486798B1 (en) 2012-02-05 2013-07-16 Tokyo Electron Limited Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
CN103887138B (zh) * 2014-03-31 2017-01-18 上海华力微电子有限公司 一种刻蚀设备的边缘环
CN105336561B (zh) * 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀装置
CN106548967B (zh) * 2015-09-18 2020-04-28 北京北方华创微电子装备有限公司 承载装置以及半导体加工设备
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
US10655224B2 (en) * 2016-12-20 2020-05-19 Lam Research Corporation Conical wafer centering and holding device for semiconductor processing
SG11201908445PA (en) * 2017-10-17 2020-05-28 Ulvac Inc Object processing apparatus
JP7018331B2 (ja) * 2018-02-23 2022-02-10 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
US11450545B2 (en) * 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
US20210249232A1 (en) * 2020-02-10 2021-08-12 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus and method for etching
JP7442365B2 (ja) * 2020-03-27 2024-03-04 東京エレクトロン株式会社 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法
JP2021180283A (ja) * 2020-05-15 2021-11-18 東京エレクトロン株式会社 載置台アセンブリ、基板処理装置および基板処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
JP2009044075A (ja) * 2007-08-10 2009-02-26 Toshiba Corp プラズマ処理装置およびプラズマエッチング方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US8114245B2 (en) * 1999-11-26 2012-02-14 Tadahiro Ohmi Plasma etching device
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP2002198355A (ja) * 2000-12-26 2002-07-12 Tokyo Electron Ltd プラズマ処理装置
KR100657054B1 (ko) * 2003-01-07 2006-12-13 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 포커스 링
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
WO2006001253A1 (ja) * 2004-06-25 2006-01-05 Kyoto University プラズマ処理装置
KR100610010B1 (ko) * 2004-07-20 2006-08-08 삼성전자주식회사 반도체 식각 장치
US20060043067A1 (en) * 2004-08-26 2006-03-02 Lam Research Corporation Yttria insulator ring for use inside a plasma chamber
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
US7544270B2 (en) * 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
JP2007250967A (ja) * 2006-03-17 2007-09-27 Tokyo Electron Ltd プラズマ処理装置および方法とフォーカスリング

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132623A (ja) * 1983-01-20 1984-07-30 Ulvac Corp ドライエツチング用電極
JP2009044075A (ja) * 2007-08-10 2009-02-26 Toshiba Corp プラズマ処理装置およびプラズマエッチング方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019239893A1 (ja) * 2018-06-12 2019-12-19 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
JP2019216176A (ja) * 2018-06-12 2019-12-19 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
US11538668B2 (en) 2018-06-12 2022-12-27 Tokyo Electron Limited Mounting stage, substrate processing device, and edge ring
JP7204350B2 (ja) 2018-06-12 2023-01-16 東京エレクトロン株式会社 載置台、基板処理装置及びエッジリング
JP2020161801A (ja) * 2019-03-22 2020-10-01 Toto株式会社 静電チャック
JP2020161802A (ja) * 2019-03-22 2020-10-01 Toto株式会社 静電チャック
US10840119B2 (en) 2019-03-22 2020-11-17 Toto Ltd. Electrostatic chuck
US10943809B2 (en) 2019-03-22 2021-03-09 Toto Ltd. Electrostatic chuck including ceramic dielectric substrate
JP2021153122A (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 エッジリング、基板支持台、プラズマ処理システム及びエッジリングの交換方法
JP7454976B2 (ja) 2020-03-24 2024-03-25 東京エレクトロン株式会社 基板支持台、プラズマ処理システム及びエッジリングの交換方法

Also Published As

Publication number Publication date
CN101901744A (zh) 2010-12-01
US20100300622A1 (en) 2010-12-02
CN101901744B (zh) 2013-01-30
TW201130395A (en) 2011-09-01
KR20100128238A (ko) 2010-12-07

Similar Documents

Publication Publication Date Title
JP2010278166A (ja) プラズマ処理用円環状部品、及びプラズマ処理装置
US8513563B2 (en) Plasma processing apparatus and plasma processing method
KR101124938B1 (ko) 플라즈마 처리 장치
EP1840937B1 (en) Plasma processing apparatus and plasma processing method
KR101957911B1 (ko) 플라즈마 처리 장치
JP5204673B2 (ja) プラズマ処理装置及びプラズマ分布の制御方法
US8440050B2 (en) Plasma processing apparatus and method, and storage medium
JP5064707B2 (ja) プラズマ処理装置
US8529730B2 (en) Plasma processing apparatus
US20070227666A1 (en) Plasma processing apparatus
TW201436034A (zh) 用於電漿蝕刻操作的基材支撐件
US11018046B2 (en) Substrate processing apparatus including edge ring
JP4935149B2 (ja) プラズマ処理用の電極板及びプラズマ処理装置
JP3946640B2 (ja) プラズマ処理装置およびプラズマ処理方法
US10847348B2 (en) Plasma processing apparatus and plasma processing method
US8034213B2 (en) Plasma processing apparatus and plasma processing method
JP2017212051A (ja) プラズマ処理方法
CN113748227A (zh) 静电吸附工艺
JP5893260B2 (ja) プラズマ処理装置および処理方法
JP2007184611A (ja) プラズマ処理装置およびプラズマ処理方法
JP2019176017A (ja) 載置台およびプラズマ処理装置
JP5064708B2 (ja) プラズマ処理装置
US10854432B2 (en) Rotary plasma electrical feedthrough
KR20080060834A (ko) 플라즈마 처리 장치
WO2010119947A1 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130228

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130708