JP2019216176A - 載置台、基板処理装置及びエッジリング - Google Patents
載置台、基板処理装置及びエッジリング Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 235000012431 wafers Nutrition 0.000 description 29
- 230000002093 peripheral effect Effects 0.000 description 23
- 238000012546 transfer Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 18
- 238000000034 method Methods 0.000 description 8
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 238000001179 sorption measurement Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- H01J2237/3341—Reactive etching
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Abstract
Description
まず、図1を参照しながら基板処理装置1の全体構成の一例について説明する。図1は、一実施形態に係る基板処理装置1の概略構成を示す断面図である。なお、本実施形態では、基板処理装置1がRIE(Reactive Ion Etching)型の基板処理装置である例について説明する。ただし、基板処理装置1は、プラズマエッチング装置やプラズマCVD(Chemical Vapor Deposition)装置等であってもよい。
次に、図1に示した電極板29の設置態様の一例について、図2を参照しながら説明する。図2は、電極板の設置態様の一例を示す図である。図2に示す2つの電極板29は、静電チャック25の外周部25bの内部の、エッジリング30に対応する領域に設けられている。以下では、2つの電極板29のうち、内側の電極板29を内周側電極板29−1とし、外側の電極板29を外周側電極板29−2とする。
図4は、溝の形態の異なる比較例1,2と本実施形態に設けられた供給孔136からの伝熱ガス(ここではHeガス)の流量の実験結果の一例を示す図である。図4の(a−1)のエッジリング断面図は、(a−2)のエッジリング裏面図のA−A断面を示す。図4の(b−1)のエッジリング断面図は、(b−2)のエッジリング裏面図のB−B断面を示す。図4の(c−1)のエッジリング断面図は、(c−2)のエッジリング裏面図のC−C断面を示す。
本実施形態に示すエッジリング30では、溝50がエッジリング30の裏面に形成される。これにより、第1の高周波電源21a及び第2の高周波電源21bからの高周波電力に対するインピーダンスを変えることができる。このため、ウエハW側に流れる高周波電流とエッジリング30側に流れる高周波電流のバランスを調整することができる。この結果、ウエハW上とエッジリング30上のプラズマの状態を同一に制御でき、プラズマエッチングにおけるウエハWのエッジ部に生じるチルティングを改善できる。
10 処理容器
11 載置台
21a 第1の高周波電源
21b 第2の高周波電源
25 静電チャック
25a 中心部
25b 外周部
26 電極板
27 直流電源
28 直流電源
29 電極板
29−1 内周側電極板
29−2 外周側電極板
30 エッジリング
36a ウエハ側ライン
36b エッジリング側ライン
43 制御部
50 溝
51 溝
136 供給孔
W ウエハ
Claims (6)
- プラズマ処理が施される基板を載置する載置台であって、
前記基板の周辺に配置されるエッジリングと該基板とを吸着する静電チャックと、
前記静電チャックと前記エッジリングとの間に熱媒体を供給する供給孔とを有し、
前記エッジリング及び前記載置台の少なくともいずれかには溝が設けられ、
前記溝は、前記供給孔の上部には設けられていない、
載置台。 - 前記溝は、前記エッジリングの裏面に設けられた第1の溝を含む、
請求項1に記載の載置台。 - 前記溝は、前記載置台の前記エッジリングが配置される面に設けられた第2の溝を含む、
請求項1又は2に記載の載置台。 - 前記静電チャックは、前記載置台に載置された基板を吸着する第1の電極と、前記エッジリングを吸着する第2の電極とを含む、
請求項1〜3のいずれか一項に記載の載置台。 - 基板を載置する載置台と、
基板の周辺に配置されるエッジリングと、
前記エッジリングと前記基板とを吸着する静電チャックと、
前記静電チャックと前記エッジリングとの間に熱媒体を供給する供給孔とを有し、
前記エッジリング及び前記載置台の少なくともいずれかには溝が設けられ、
前記溝は、前記供給孔の上部には設けられていない、
基板処理装置。 - プラズマ処理が施される基板の周辺に配置されるエッジリングであって、
前記エッジリングには溝が設けられ、
前記溝は、前記エッジリングを吸着する静電チャックと前記エッジリングとの間に熱媒体を供給する供給孔の上部には設けられていない、
エッジリング。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2018112276A JP7204350B2 (ja) | 2018-06-12 | 2018-06-12 | 載置台、基板処理装置及びエッジリング |
US16/642,542 US11538668B2 (en) | 2018-06-12 | 2019-05-29 | Mounting stage, substrate processing device, and edge ring |
PCT/JP2019/021280 WO2019239893A1 (ja) | 2018-06-12 | 2019-05-29 | 載置台、基板処理装置及びエッジリング |
CN201980004510.7A CN111095498B (zh) | 2018-06-12 | 2019-05-29 | 载置台、基板处理装置以及边缘环 |
KR1020207005007A KR20210019397A (ko) | 2018-06-12 | 2019-05-29 | 적재대, 기판 처리 장치 및 에지 링 |
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JP2018112276A JP7204350B2 (ja) | 2018-06-12 | 2018-06-12 | 載置台、基板処理装置及びエッジリング |
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JP2019216176A true JP2019216176A (ja) | 2019-12-19 |
JP7204350B2 JP7204350B2 (ja) | 2023-01-16 |
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US (1) | US11538668B2 (ja) |
JP (1) | JP7204350B2 (ja) |
KR (1) | KR20210019397A (ja) |
CN (1) | CN111095498B (ja) |
WO (1) | WO2019239893A1 (ja) |
Cited By (1)
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WO2022192041A1 (en) * | 2021-03-12 | 2022-09-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
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JP7325294B2 (ja) * | 2019-10-17 | 2023-08-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US20210249232A1 (en) * | 2020-02-10 | 2021-08-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for etching |
US20230132307A1 (en) * | 2021-10-26 | 2023-04-27 | Applied Materials, Inc. | Chuck For Processing Semiconductor Workpieces At High Temperatures |
Citations (4)
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WO1998039500A1 (fr) * | 1997-03-07 | 1998-09-11 | Tokyo Electron Limited | Graveur plasma |
JP2007201355A (ja) * | 2006-01-30 | 2007-08-09 | Hitachi High-Technologies Corp | ウエハ載置用電極 |
JP2010278166A (ja) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | プラズマ処理用円環状部品、及びプラズマ処理装置 |
JP2016122740A (ja) * | 2014-12-25 | 2016-07-07 | 東京エレクトロン株式会社 | 静電吸着方法及び基板処理装置 |
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JP4547182B2 (ja) * | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP5492578B2 (ja) | 2003-04-24 | 2014-05-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5269335B2 (ja) * | 2007-03-30 | 2013-08-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8563619B2 (en) * | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
JP5255936B2 (ja) * | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
JP5357639B2 (ja) * | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
JP5642531B2 (ja) * | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP6010433B2 (ja) * | 2012-11-15 | 2016-10-19 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
JP6689020B2 (ja) * | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR102387008B1 (ko) * | 2017-11-06 | 2022-04-18 | 엔지케이 인슐레이터 엘티디 | 정전 척 어셈블리, 정전 척 및 포커스 링 |
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- 2019-05-29 WO PCT/JP2019/021280 patent/WO2019239893A1/ja active Application Filing
- 2019-05-29 CN CN201980004510.7A patent/CN111095498B/zh active Active
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Patent Citations (4)
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US11538668B2 (en) | 2022-12-27 |
JP7204350B2 (ja) | 2023-01-16 |
KR20210019397A (ko) | 2021-02-22 |
US20200194239A1 (en) | 2020-06-18 |
CN111095498A (zh) | 2020-05-01 |
CN111095498B (zh) | 2024-05-24 |
WO2019239893A1 (ja) | 2019-12-19 |
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