JP2010263198A - 半導体基板の製造方法および半導体基板 - Google Patents
半導体基板の製造方法および半導体基板 Download PDFInfo
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- 239000012535 impurity Substances 0.000 claims abstract description 152
- 150000001875 compounds Chemical class 0.000 claims abstract description 50
- 238000010438 heat treatment Methods 0.000 claims abstract description 33
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- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 15
- 239000000470 constituent Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 230000001747 exhibiting effect Effects 0.000 claims description 11
- 229910021478 group 5 element Inorganic materials 0.000 claims description 11
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 9
- 229910000077 silane Inorganic materials 0.000 claims description 9
- 150000008282 halocarbons Chemical class 0.000 claims description 7
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 162
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 9
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体を結晶成長させる反応容器内に第1不純物原子を構成要素として有する単体または化合物を含む第1不純物ガスを導入する段階を含む複数の段階を繰り返して、複数の半導体基板を製造する方法であって、第1不純物ガスを導入する段階の後に、製造された半導体基板を取り出す段階と、反応容器内に第1半導体を設置する段階と、反応容器内に、第1半導体内で第1不純物原子と反対の伝導型を示す第2不純物原子を構成要素として有する単体または化合物を含む第2不純物ガスを導入する段階と、第1半導体を第2不純物ガスの雰囲気中で加熱する段階と、加熱した前記第1半導体上に第2半導体を結晶成長させる段階とを備える半導体基板の製造方法を提供する。
【選択図】図1
Description
(特許文献1)特開2008−60554号公報
表1に示す積層構造を有する半導体基板2100を作成した。表1において各層番号は、各半導体層の符号を示す。表1において、各半導体層の材料、膜厚、ドーパントの種類およびキャリア濃度を示し、不純物を導入しない場合、ドーパントの種類として「無」と表示した。
表3に示す積層構造を有する半導体基板3100を作成した。表3において各層番号は、各半導体層の符号を示す。表3において、各半導体層の材料、膜厚、キャリアタイプおよびキャリア濃度を示し、不純物を導入しない真正半導体の場合、キャリアタイプを「i」とした。
Claims (18)
- 半導体を結晶成長させる反応容器内に第1不純物原子を構成要素として有する単体または化合物を含む第1不純物ガスを導入する段階を含む複数の段階を繰り返して、複数の半導体基板を製造する方法であって、
前記第1不純物ガスを導入する段階の後に、
製造された半導体基板を取り出す段階と、
前記反応容器内に第1半導体を設置する段階と、
前記反応容器内に、前記第1半導体内で前記第1不純物原子と反対の伝導型を示す第2不純物原子を構成要素として有する単体または化合物を含む第2不純物ガスを導入する段階と、
前記第1半導体を前記第2不純物ガスの雰囲気中で加熱する段階と、
前記加熱した前記第1半導体上に第2半導体を結晶成長させる段階と
を備える半導体基板の製造方法。 - 前記加熱する段階において、電子密度と正孔密度との差を示す有効キャリア密度を前記第1半導体の少なくとも表面において減少させるべく前記加熱する条件を設定する
請求項1に記載の半導体基板の製造方法。 - 前記第1不純物原子が、前記第1半導体内でN型の伝導型を示す不純物原子であり、
前記第2不純物ガスが、前記第1半導体内でP型の伝導型を示す不純物原子を含むP型不純物ガスを含む
請求項1または請求項2に記載の半導体基板の製造方法。 - 前記第1半導体または前記第2半導体が3−5族化合物半導体であり、
前記P型不純物ガスが、ハロゲン化炭化水素ガスを含む
請求項3に記載の半導体基板の製造方法。 - 前記ハロゲン化炭化水素ガスが、
CHnX(4−n)
(ただし、XはCl、BrおよびIからなる群から選択されるハロゲン原子であり、nは、0≦n≦3の条件を満たす整数であり、0≦n≦2の場合、複数のXは互いに同一の原子でも異なった原子でもよい。)である
請求項4に記載の半導体基板の製造方法。 - 前記第1半導体または前記第2半導体が3−5族化合物半導体であり、
前記第2不純物ガスがアルシンおよび水素を含む
請求項1から請求項5の何れか一項に記載の半導体基板の製造方法。 - 前記第2不純物ガスが、1ppb以下のGeH4を含むアルシン原料ガスを含む
請求項6に記載の半導体基板の製造方法。 - 前記第2半導体が、電子または正孔が移動するチャネルとして機能するモノキャリア移動半導体である
請求項1から請求項7の何れか一項に記載の半導体基板の製造方法。 - 前記モノキャリア移動半導体が、3−5族化合物半導体のN型モノキャリア移動半導体であり、
前記第2半導体を結晶成長させる段階において、前記N型の伝導型を示す不純物原子を含む化合物としてシランまたはジシランを前記反応容器に導入して前記N型モノキャリア移動半導体を結晶成長させる
請求項8に記載の半導体基板の製造方法。 - 前記モノキャリア移動半導体上に、前記モノキャリア移動半導体とは反対の伝導型のモノキャリア移動半導体を形成する段階をさらに含む
請求項8または請求項9に記載の半導体基板の製造方法。 - 前記第2半導体上に、N型半導体、P型半導体およびN型半導体をこの順にエピタキシャル成長させる、またはP型半導体、N型半導体およびP型半導体をこの順にエピタキシャル成長させることにより、N型半導体/P型半導体/N型半導体で表される積層半導体、またはP型半導体/N型半導体/P型半導体で表される積層半導体を形成する段階、をさらに含む
請求項1から請求項10の何れか一項に記載の半導体基板の製造方法。 - 前記第1不純物原子が、半導体内でN型の伝導型を示す不純物原子であり、
前記第2不純物ガスが、P型の伝導型を示すP型不純物原子を含むP型不純物ガスを含み、
前記積層半導体が、バイポーラトランジスタのベースとして機能するベース層を含み、
前記P型不純物ガスと同じ種類のガスを前記反応容器に導入して前記ベース層を製造する
請求項11に記載の半導体基板の製造方法。 - 前記第2半導体を結晶成長させる段階において、N型の伝導型を示す不純物原子を含む化合物としてシランまたはジシランを前記反応容器に導入して、前記積層半導体における前記N型半導体を形成する
請求項11または請求項12に記載の半導体基板の製造方法。 - 前記第1半導体を加熱する段階と前記第2半導体を形成する段階との間に、前記第1半導体上に抵抗体を形成する段階をさらに備える
請求項1から請求項13の何れか一項に記載の半導体基板の製造方法。 - 前記抵抗体を形成する段階は、3族元素を含む3族原料ガスおよび5族元素を含む5族原料ガスを用いたエピタキシャル成長により、3−5族化合物半導体のP型半導体を形成する段階を有し、
前記P型半導体を形成する段階において、前記P型半導体のアクセプタ濃度を前記3族原料ガスと前記5族原料ガスとの流量比により制御する
請求項14に記載の半導体基板の製造方法。 - 少なくとも前記第2半導体を前記第1半導体上に形成した後、少なくとも前記第2半導体が形成された前記半導体基板を前記反応容器から取り出す段階をさらに含み、
前記取り出す段階の後、前記反応容器の内部の不純物原子の影響を軽減する工程を経ることなく、
前記反応容器の内部に前記第1半導体とは別の第1半導体を設置し、前記ガスを前記反応容器の内部に導入する段階と、
前記別の第1半導体を前記ガスの雰囲気中で加熱する段階と、
前記加熱した前記第1半導体上に前記第2半導体を形成する段階と、
を繰り返す
請求項1から請求項15の何れか一項に記載の半導体基板の製造方法。 - 第1半導体と、前記第1半導体上に形成された第2半導体とを含む半導体基板であって、
前記第1半導体と前記第2半導体との界面に、
P型不純物原子と、前記P型不純物原子と実質的に同じ密度のN型不純物原子と
を有する半導体基板。 - 前記P型不純物原子および前記N型不純物原子が活性化されている
請求項17に記載の半導体基板。
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07273024A (ja) * | 1994-03-30 | 1995-10-20 | Nippon Steel Corp | 化合物半導体基板 |
JPH0936426A (ja) * | 1995-07-17 | 1997-02-07 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JPH0945896A (ja) * | 1995-07-27 | 1997-02-14 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウェハ及びその製造方法 |
JPH09293854A (ja) * | 1996-02-29 | 1997-11-11 | Sumitomo Chem Co Ltd | 高濃度ドープ半導体およびその製造方法 |
JP2002314125A (ja) * | 2001-04-19 | 2002-10-25 | Rohm Co Ltd | 半導体発光素子の製法 |
JP2003020300A (ja) * | 2001-07-06 | 2003-01-24 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウェハの製造方法 |
JP2003063899A (ja) * | 2001-08-29 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 3−5族化合物半導体の製造方法 |
JP2004515344A (ja) * | 2000-12-04 | 2004-05-27 | マセソン トリ − ガス、インコーポレイテッド | 水素化物ガス、不活性ガス及び非反応性ガスを精製するための方法及び材料 |
JP2004241463A (ja) * | 2003-02-04 | 2004-08-26 | Hitachi Cable Ltd | 化合物半導体の気相成長方法 |
JP2006012915A (ja) * | 2004-06-22 | 2006-01-12 | Hitachi Cable Ltd | Iii−v族化合物半導体装置及びその製造方法 |
JP2006222135A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | ヘテロ接合バイポーラトランジスタ用エピタキシャルウエハ及びヘテロ接合バイポーラトランジスタ |
JP2008060554A (ja) * | 2006-07-28 | 2008-03-13 | Iqe Rf Llc | 共通化合物半導体第3〜5族ウエハ上に集積デバイス用のエピタキシャルウエハを製造する方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63156363A (ja) * | 1986-12-20 | 1988-06-29 | Fujitsu Ltd | 半導体装置 |
JP3326704B2 (ja) * | 1993-09-28 | 2002-09-24 | 富士通株式会社 | Iii/v系化合物半導体装置の製造方法 |
US5762706A (en) * | 1993-11-09 | 1998-06-09 | Fujitsu Limited | Method of forming compound semiconductor device |
KR100519896B1 (ko) * | 1996-02-29 | 2006-04-28 | 스미또모 가가꾸 가부시끼가이샤 | 고농도로도핑된반도체및그의제조방법 |
JP2000022135A (ja) * | 1998-07-06 | 2000-01-21 | Toshiba Corp | 電界効果トランジスタ |
SG115549A1 (en) * | 2002-07-08 | 2005-10-28 | Sumitomo Chemical Co | Epitaxial substrate for compound semiconductor light emitting device, method for producing the same and light emitting device |
JP4463482B2 (ja) * | 2002-07-11 | 2010-05-19 | パナソニック株式会社 | Misfet及びその製造方法 |
-
2010
- 2010-04-02 WO PCT/JP2010/002450 patent/WO2010116701A1/ja active Application Filing
- 2010-04-02 CN CN2010800191051A patent/CN102414789A/zh active Pending
- 2010-04-02 KR KR1020117020771A patent/KR20120003433A/ko not_active Application Discontinuation
- 2010-04-05 JP JP2010086844A patent/JP2010263198A/ja active Pending
- 2010-04-07 TW TW099110686A patent/TW201115625A/zh unknown
-
2011
- 2011-10-06 US US13/267,370 patent/US20120068224A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07273024A (ja) * | 1994-03-30 | 1995-10-20 | Nippon Steel Corp | 化合物半導体基板 |
JPH0936426A (ja) * | 1995-07-17 | 1997-02-07 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JPH0945896A (ja) * | 1995-07-27 | 1997-02-14 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウェハ及びその製造方法 |
JPH09293854A (ja) * | 1996-02-29 | 1997-11-11 | Sumitomo Chem Co Ltd | 高濃度ドープ半導体およびその製造方法 |
JP2004515344A (ja) * | 2000-12-04 | 2004-05-27 | マセソン トリ − ガス、インコーポレイテッド | 水素化物ガス、不活性ガス及び非反応性ガスを精製するための方法及び材料 |
JP2002314125A (ja) * | 2001-04-19 | 2002-10-25 | Rohm Co Ltd | 半導体発光素子の製法 |
JP2003020300A (ja) * | 2001-07-06 | 2003-01-24 | Hitachi Cable Ltd | 化合物半導体エピタキシャルウェハの製造方法 |
JP2003063899A (ja) * | 2001-08-29 | 2003-03-05 | Matsushita Electric Ind Co Ltd | 3−5族化合物半導体の製造方法 |
JP2004241463A (ja) * | 2003-02-04 | 2004-08-26 | Hitachi Cable Ltd | 化合物半導体の気相成長方法 |
JP2006012915A (ja) * | 2004-06-22 | 2006-01-12 | Hitachi Cable Ltd | Iii−v族化合物半導体装置及びその製造方法 |
JP2006222135A (ja) * | 2005-02-08 | 2006-08-24 | Hitachi Cable Ltd | ヘテロ接合バイポーラトランジスタ用エピタキシャルウエハ及びヘテロ接合バイポーラトランジスタ |
JP2008060554A (ja) * | 2006-07-28 | 2008-03-13 | Iqe Rf Llc | 共通化合物半導体第3〜5族ウエハ上に集積デバイス用のエピタキシャルウエハを製造する方法 |
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WO2010116701A1 (ja) | 2010-10-14 |
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