JP2010251555A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2010251555A JP2010251555A JP2009100020A JP2009100020A JP2010251555A JP 2010251555 A JP2010251555 A JP 2010251555A JP 2009100020 A JP2009100020 A JP 2009100020A JP 2009100020 A JP2009100020 A JP 2009100020A JP 2010251555 A JP2010251555 A JP 2010251555A
- Authority
- JP
- Japan
- Prior art keywords
- glass transition
- transition temperature
- underfill resin
- semiconductor device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 94
- 229920005989 resin Polymers 0.000 claims abstract description 98
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- 229910000679 solder Inorganic materials 0.000 claims abstract description 90
- 230000009477 glass transition Effects 0.000 claims abstract description 66
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims description 21
- 229920000647 polyepoxide Polymers 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 17
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- 150000008065 acid anhydrides Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
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- 230000003111 delayed effect Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
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- 239000011256 inorganic filler Substances 0.000 description 1
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- 238000002161 passivation Methods 0.000 description 1
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- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
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- 230000000930 thermomechanical effect Effects 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Abstract
【解決手段】半導体装置1は、接続パッド4を有する配線基板2と、電極パッド5を有する半導体チップ3とを具備する。半導体チップ3は配線基板2上に搭載されており、電極パッド5は接続パッド4と半田バンプ6を介して接続されている。配線基板2と半導体チップ3との間の隙間には、熱硬化された熱硬化性樹脂からなるアンダーフィル樹脂7が充填されている。アンダーフィル樹脂7は半田バンプ6の結晶粒の成長に伴ってガラス転移温度Tgが上昇する。
【選択図】図1
Description
Claims (5)
- チップ搭載領域と、前記チップ搭載領域内に配置された接続パッドとを有する配線基板と、
前記配線基板の前記チップ搭載領域上に搭載され、前記接続パッドと半田バンプを介して接続された電極パッドを有する半導体チップと、
前記配線基板と前記半導体チップとの間の隙間に充填され、熱硬化された熱硬化性樹脂からなるアンダーフィル樹脂とを具備し、
前記アンダーフィル樹脂は前記半田バンプの結晶粒の成長に伴ってガラス転移温度Tgが上昇することを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度をTg1、前記半田バンプの結晶粒の成長に伴って上昇した後のガラス転移温度をTg2としたとき、前記ガラス転移温度Tg2は前記ガラス転移温度Tg1に対して1.05Tg1≦Tg2の関係を満足することを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度Tg1は110℃未満であり、前記アンダーフィル樹脂の上昇後のガラス転移温度Tg2は125℃未満であることを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度Tg1は60℃以上100℃以下であり、前記アンダーフィル樹脂の上昇後のガラス転移温度Tg2は90℃以上120℃以下であることを特徴とする半導体装置。 - 請求項1ないし請求項4のいずれか1項記載の半導体装置の製造方法において、
前記半田バンプは鉛フリー半田合金からなり、かつ前記アンダーフィル樹脂は熱硬化性エポキシ樹脂組成物からなることを特徴とする半導体装置。
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US9642275B2 (en) * | 2012-12-25 | 2017-05-02 | Mitsubishi Materials Corporation | Power module |
KR101568659B1 (ko) * | 2013-03-29 | 2015-11-12 | 제일모직주식회사 | 도전성 접착층을 포함하는 이방 도전성 필름 및 상기 필름에 의해 접속된 반도체 장치 |
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JPH10112476A (ja) * | 1996-10-04 | 1998-04-28 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
JP2000026708A (ja) | 1998-05-07 | 2000-01-25 | Mitsubishi Electric Corp | エポキシ樹脂組成物及び半導体装置 |
JP2006313826A (ja) | 2005-05-09 | 2006-11-16 | Renesas Technology Corp | 半導体装置の製造方法 |
WO2009038020A1 (ja) | 2007-09-19 | 2009-03-26 | Toray Industries, Inc. | 電子部品用接着剤組成物およびそれを用いた電子部品用接着剤シート |
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US6207475B1 (en) * | 1999-03-30 | 2001-03-27 | Industrial Technology Research Institute | Method for dispensing underfill and devices formed |
JP2004523893A (ja) * | 2000-11-14 | 2004-08-05 | ヘンケル ロックタイト コーポレイション | ウェーハ塗布用融剤兼アンダーフィル材、ならびにそれを用いて製造された積層電子組立体 |
JP3723483B2 (ja) * | 2001-10-16 | 2005-12-07 | 日本電気株式会社 | 電子部品装置 |
US6677179B2 (en) * | 2001-11-16 | 2004-01-13 | Indium Corporation Of America | Method of applying no-flow underfill |
JP2008042077A (ja) * | 2006-08-09 | 2008-02-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
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JPH10112476A (ja) * | 1996-10-04 | 1998-04-28 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
JP2000026708A (ja) | 1998-05-07 | 2000-01-25 | Mitsubishi Electric Corp | エポキシ樹脂組成物及び半導体装置 |
JP2006313826A (ja) | 2005-05-09 | 2006-11-16 | Renesas Technology Corp | 半導体装置の製造方法 |
WO2009038020A1 (ja) | 2007-09-19 | 2009-03-26 | Toray Industries, Inc. | 電子部品用接着剤組成物およびそれを用いた電子部品用接着剤シート |
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