JP5658436B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5658436B2 JP5658436B2 JP2009100020A JP2009100020A JP5658436B2 JP 5658436 B2 JP5658436 B2 JP 5658436B2 JP 2009100020 A JP2009100020 A JP 2009100020A JP 2009100020 A JP2009100020 A JP 2009100020A JP 5658436 B2 JP5658436 B2 JP 5658436B2
- Authority
- JP
- Japan
- Prior art keywords
- glass transition
- transition temperature
- underfill resin
- semiconductor device
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 229920005989 resin Polymers 0.000 claims description 95
- 239000011347 resin Substances 0.000 claims description 95
- 229910000679 solder Inorganic materials 0.000 claims description 88
- 230000009477 glass transition Effects 0.000 claims description 64
- 229920001187 thermosetting polymer Polymers 0.000 claims description 26
- 239000003822 epoxy resin Substances 0.000 claims description 22
- 229920000647 polyepoxide Polymers 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 aliphatic acid anhydride Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000009719 polyimide resin Substances 0.000 description 4
- 150000008065 acid anhydrides Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
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- 239000007822 coupling agent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
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Classifications
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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Description
Claims (5)
- チップ搭載領域と、前記チップ搭載領域内に配置された接続パッドとを有する配線基板
と、
前記配線基板の前記チップ搭載領域上に搭載され、前記接続パッドと半田バンプを介し
て接続された電極パッドを有する半導体チップと、
前記配線基板と前記半導体チップとの間の隙間に充填され、一部が熱硬化された硬化後
の熱硬化性樹脂からなるアンダーフィル樹脂とを具備する半導体装置であって、
一部が熱硬化された硬化後の熱硬化性樹脂からなる前記アンダーフィル樹脂は、キュア
条件によるキュア処理後において、エポキシ樹脂と硬化剤との反応が若干進行し得る状態
であり、
前記反応が若干進行し得る状態は、前記半田バンプの融点未満の温度領域における‐5
5度から125度の範囲内で1000回の熱サイクルを付加したことによる前記半田バン
プの結晶粒の成長に伴ってガラス転移温度Tgが上昇する状態であることを特徴とする半
導体装置。 - 請求項1記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度をTg1、前記半田バンプの
結晶粒の成長に伴って上昇した後のガラス転移温度をTg2としたとき、前記ガラス転移
温度Tg2は前記ガラス転移温度Tg1に対して1.05Tg1≦Tg2の関係を満足す
ることを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度Tg1は110℃未満であり
、前記アンダーフィル樹脂の上昇後のガラス転移温度Tg2は125℃未満であることを
特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記アンダーフィル樹脂の前記熱硬化後のガラス転移温度Tg1は60℃以上100℃
以下であり、前記アンダーフィル樹脂の上昇後のガラス転移温度Tg2は90℃以上12
0℃以下であることを特徴とする半導体装置。 - 請求項1ないし請求項4いずれか1項記載の半導体装置の製造方法において、
前記半田バンプは鉛フリー半田合金からなり、かつ前記アンダーフィル樹脂は熱硬化性
エポキシ樹脂組成物からなることを特徴とする半導体装置。
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JP2009100020A JP5658436B2 (ja) | 2009-04-16 | 2009-04-16 | 半導体装置 |
US12/723,801 US8368215B2 (en) | 2009-04-16 | 2010-03-15 | Semiconductor device and method of manufacturing the same |
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JP2012191062A (ja) * | 2011-03-11 | 2012-10-04 | Toshiba Corp | 半導体装置 |
JP5598592B2 (ja) * | 2012-12-25 | 2014-10-01 | 三菱マテリアル株式会社 | パワーモジュール |
KR101568659B1 (ko) * | 2013-03-29 | 2015-11-12 | 제일모직주식회사 | 도전성 접착층을 포함하는 이방 도전성 필름 및 상기 필름에 의해 접속된 반도체 장치 |
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JPH10112476A (ja) * | 1996-10-04 | 1998-04-28 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
JP2000026708A (ja) | 1998-05-07 | 2000-01-25 | Mitsubishi Electric Corp | エポキシ樹脂組成物及び半導体装置 |
US6207475B1 (en) * | 1999-03-30 | 2001-03-27 | Industrial Technology Research Institute | Method for dispensing underfill and devices formed |
AU2002245103A1 (en) * | 2000-11-14 | 2002-07-30 | Henkel Loctite Corporation | Wafer applied fluxing and underfill material, and layered electronic assemblies manufactured therewith |
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US6677179B2 (en) * | 2001-11-16 | 2004-01-13 | Indium Corporation Of America | Method of applying no-flow underfill |
JP2006313826A (ja) | 2005-05-09 | 2006-11-16 | Renesas Technology Corp | 半導体装置の製造方法 |
JP2008042077A (ja) | 2006-08-09 | 2008-02-21 | Renesas Technology Corp | 半導体装置及びその製造方法 |
KR101471232B1 (ko) | 2007-09-19 | 2014-12-09 | 도레이 카부시키가이샤 | 전자 부품용 접착제 조성물 및 이를 이용한 전자 부품용 접착제 시트 |
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US20100264539A1 (en) | 2010-10-21 |
US8368215B2 (en) | 2013-02-05 |
JP2010251555A (ja) | 2010-11-04 |
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