JP2010205851A - 半導体装置及びその製造方法、並びに電子装置 - Google Patents

半導体装置及びその製造方法、並びに電子装置 Download PDF

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JP2010205851A
JP2010205851A JP2009048491A JP2009048491A JP2010205851A JP 2010205851 A JP2010205851 A JP 2010205851A JP 2009048491 A JP2009048491 A JP 2009048491A JP 2009048491 A JP2009048491 A JP 2009048491A JP 2010205851 A JP2010205851 A JP 2010205851A
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Prior art keywords
sealing resin
electronic component
support
connection
semiconductor device
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JP2009048491A
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JP2010205851A5 (enExample
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Yuji Kunimoto
裕治 国本
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Priority to JP2009048491A priority Critical patent/JP2010205851A/ja
Priority to US12/715,008 priority patent/US20100219522A1/en
Publication of JP2010205851A publication Critical patent/JP2010205851A/ja
Publication of JP2010205851A5 publication Critical patent/JP2010205851A5/ja
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JP2016504774A (ja) * 2013-01-29 2016-02-12 アップル インコーポレイテッド 超薄型PoPパッケージ
JP2017112325A (ja) * 2015-12-18 2017-06-22 Towa株式会社 半導体装置及びその製造方法

Families Citing this family (3)

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KR20130090143A (ko) * 2012-02-03 2013-08-13 삼성전자주식회사 패키지-온-패키지 타입의 반도체 패키지 및 그 제조방법
JP2015162660A (ja) * 2014-02-28 2015-09-07 イビデン株式会社 プリント配線板、プリント配線板の製造方法、パッケージ−オン−パッケージ
CN111933621A (zh) * 2020-07-01 2020-11-13 江苏长电科技股份有限公司 一种电磁屏蔽封装结构及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016786A (ja) * 2007-07-02 2009-01-22 Nepes Corp 超薄型半導体パッケージ及びその製造方法

Family Cites Families (8)

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DE19732619C2 (de) * 1997-07-29 1999-08-19 Fraunhofer Ges Forschung Optische Detektoreinrichtung
JP3938921B2 (ja) * 2003-07-30 2007-06-27 Tdk株式会社 半導体ic内蔵モジュールの製造方法
JP4394928B2 (ja) * 2003-07-30 2010-01-06 大日本印刷株式会社 多層配線基板およびその製造方法
JP4575071B2 (ja) * 2004-08-02 2010-11-04 新光電気工業株式会社 電子部品内蔵基板の製造方法
JP4016039B2 (ja) * 2005-06-02 2007-12-05 新光電気工業株式会社 配線基板および配線基板の製造方法
US7640655B2 (en) * 2005-09-13 2010-01-05 Shinko Electric Industries Co., Ltd. Electronic component embedded board and its manufacturing method
CN102098876B (zh) * 2006-04-27 2014-04-09 日本电气株式会社 用于电路基板的制造工艺
CN101911847B (zh) * 2007-12-25 2012-07-18 株式会社村田制作所 多层配线基板的制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009016786A (ja) * 2007-07-02 2009-01-22 Nepes Corp 超薄型半導体パッケージ及びその製造方法

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