JP2010183083A - 光起電薄膜装置の製造方法および光起電薄膜装置 - Google Patents
光起電薄膜装置の製造方法および光起電薄膜装置 Download PDFInfo
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- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】直径約3nm〜約30nmのナノスケールの粒子を含む懸濁液を透明な基板上へ塗布することにより、金属カルコゲナイド化合物半導体層を形成し、基板上に塗布される金属カルコゲナイド化合物半導体層の厚さを約150nm〜約2000nmまたは約2500nmとする。
【選択図】図3
Description
Claims (17)
- 太陽光の吸収体としての平面状の金属カルコゲナイド化合物半導体層(7)と、
該金属カルコゲナイド化合物半導体層上に被着される第1の金属層(8)と
を有しており、
前記金属カルコゲナイド化合物半導体層と前記第1の金属層のコンタクト面との接触面がショットキーコンタクトを形成している、
光起電薄膜装置(2)の製造方法において、
直径約3nm〜約30nmのナノスケールの粒子を含む懸濁液を透明な材料の基板(12)上へ塗布することにより、前記金属カルコゲナイド化合物半導体層を形成し、
前記基板上に塗布される前記金属カルコゲナイド化合物半導体層の厚さを約150nm〜約2500nmとする
ことを特徴とする光起電薄膜装置の製造方法。 - 前記金属カルコゲナイド化合物半導体層の前記厚さを約500nm〜約1000nmとする、請求項1記載の光起電薄膜装置の製造方法。
- 前記金属カルコゲナイド化合物半導体層を、前記基板の材料に対して、ブレードコーティング、ローラコーティング、カーテンコーティング、プリンティングまたはスプレーコーティングを行うことにより被着させる、請求項1または2記載の光起電薄膜装置の製造方法。
- 前記金属カルコゲナイド化合物半導体層として、TiO2,SrTiO3,Cu2S,ZnO,WO3,CdS,MoS2,CdSeS,SnO2,Pb3O4,CdSeのグループに含まれるいずれかの半導体材料、有利にはTiO2を用いる、請求項1から3までの光起電薄膜装置の製造方法。
- 前記第1の金属層を、Ru,Rh,Pd,Ag,Os,Ir,Pt,Au,Al,Cr,Cu,Ni,Mo,Pb,Ta,Wのグループに含まれるいずれかの金属、有利にはPt,Pd,AuまたはNiにより形成する、請求項1から4までのいずれか1項記載の光起電薄膜装置の製造方法。
- 前記金属カルコゲナイド化合物半導体層上に被着される前記第1の金属層の厚さを約10nm〜約20nmとする、請求項1から5までのいずれか1項記載の光起電薄膜装置の製造方法。
- 前記第1の金属層のうち前記金属カルコゲナイド化合物半導体層から遠い側の面に強化された第2の金属層(9)を被着し、該第2の金属層の材料を該第2の金属層と前記第1の金属層とのあいだにオーミックコンタクトが形成されるように選定する、請求項1から6までのいずれか1項記載の光起電薄膜装置の製造方法。
- 前記透明な材料の基板はガラス基板であり、有利には安全ガラスの形態の強化フロートガラスまたは非強化フロートガラスであり、前記透明な材料の基板は前記金属カルコゲナイド化合物半導体層によってコーティングされる面に透光性の導電層または透明な導電層(6)を有しており、有利には該導電層はTCO層であり、特に有利にはFTO層である、請求項1から7までのいずれか1項記載の光起電薄膜装置の製造方法。
- 複数の光起電薄膜装置をモジュラー状に並べて共通の基板(12)上に被着し、前記基板および該基板上に被着された薄膜の積層体を一体的にパターニングすることにより複数の光起電薄膜装置を形成する、請求項1から8までのいずれか1項記載の光起電薄膜装置の製造方法。
- 前記複数の光起電薄膜装置をマトリクス状に前記基板に被着し、複数の光起電薄膜装置を、行状に直列に、また、列状に並列に接続する、請求項9記載の光起電薄膜装置の製造方法。
- 複数の光起電薄膜装置を共通の基板(12)上に積層体(27)として上下方向に形成する、請求項1から10までのいずれか1項記載の光起電薄膜装置の製造方法。
- 1つまたは複数の光起電薄膜装置を接着剤シート(38)および後面基板(39)によって一体に積層する、請求項1から11までのいずれか1項記載の光起電薄膜装置の製造方法。
- 前記後面基板はフロートガラスまたは部分的にプリテンションされたフロートガラス(TVG)から形成されたガラス基板であり、該後面基板と前記金属カルコゲナイド化合物半導体層を支持するガラス基板とを共通にオートクレーブプロセスにかけて合わせ安全ガラス(VSG)を形成する、請求項12または8記載の光起電薄膜装置の製造方法。
- 前記後面基板を薄膜のPVFシートおよびPETシートを含むポリマーサンドウィッチシートから形成し、2つのシートのあいだに水蒸気バリア層としてアルミニウムシートが挿入される、請求項12記載の光起電薄膜装置の製造方法。
- 1つまたは複数の光起電薄膜装置を、絶縁ガラス接合体の内部に、有利には、太陽光の当たるガラスプレートの内側に、配置される、請求項1から14までのいずれか1項記載の光起電薄膜装置の製造方法。
- 請求項1から15までのいずれか1項記載の光起電薄膜装置の製造方法にしたがって製造されることを特徴とする光起電薄膜装置。
- 建築物のファサード材、屋根材、胸壁材、庇材または梁材として用いられる、請求項16記載の光起電薄膜装置。
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JP (1) | JP2010183083A (ja) |
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EP2404326A2 (de) | 2012-01-11 |
US20100200047A1 (en) | 2010-08-12 |
DE102009007908A1 (de) | 2010-08-12 |
WO2010089364A3 (de) | 2011-08-04 |
WO2010089364A2 (de) | 2010-08-12 |
EP2216832A3 (de) | 2011-07-06 |
US8389318B2 (en) | 2013-03-05 |
KR20100090667A (ko) | 2010-08-16 |
EP2216832A2 (de) | 2010-08-11 |
CN101834231A (zh) | 2010-09-15 |
KR101112980B1 (ko) | 2012-02-24 |
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