JP2010153922A5 - - Google Patents

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Publication number
JP2010153922A5
JP2010153922A5 JP2010080762A JP2010080762A JP2010153922A5 JP 2010153922 A5 JP2010153922 A5 JP 2010153922A5 JP 2010080762 A JP2010080762 A JP 2010080762A JP 2010080762 A JP2010080762 A JP 2010080762A JP 2010153922 A5 JP2010153922 A5 JP 2010153922A5
Authority
JP
Japan
Prior art keywords
film
mask
circuit pattern
semiconductor wafer
exposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010080762A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010153922A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010080762A priority Critical patent/JP2010153922A/ja
Priority claimed from JP2010080762A external-priority patent/JP2010153922A/ja
Publication of JP2010153922A publication Critical patent/JP2010153922A/ja
Publication of JP2010153922A5 publication Critical patent/JP2010153922A5/ja
Pending legal-status Critical Current

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JP2010080762A 2004-02-09 2010-03-31 半導体装置の製造方法 Pending JP2010153922A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010080762A JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004031528 2004-02-09
JP2010080762A JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2005517741A Division JP4529141B2 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010153922A JP2010153922A (ja) 2010-07-08
JP2010153922A5 true JP2010153922A5 (enExample) 2011-12-01

Family

ID=34836053

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005517741A Expired - Fee Related JP4529141B2 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法
JP2010080762A Pending JP2010153922A (ja) 2004-02-09 2010-03-31 半導体装置の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2005517741A Expired - Fee Related JP4529141B2 (ja) 2004-02-09 2005-02-04 露光装置及びそれを用いた半導体装置の製造方法

Country Status (4)

Country Link
US (2) US8048614B2 (enExample)
JP (2) JP4529141B2 (enExample)
KR (2) KR101118834B1 (enExample)
WO (1) WO2005076322A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4450769B2 (ja) * 2005-06-16 2010-04-14 富士フイルム株式会社 画像処理装置、画像描画装置及びシステム
JP6474655B2 (ja) * 2014-09-30 2019-02-27 エイブリック株式会社 レチクル透過率測定方法、投影露光装置および投影露光方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS63295350A (ja) 1987-05-26 1988-12-01 Ozen Corp シ−ト重複検知装置
JPH0216717A (ja) * 1988-07-05 1990-01-19 Nikon Corp パターン投影装置
JPH03137511A (ja) 1989-10-24 1991-06-12 Nkk Corp 二重管式連通管
JPH0852997A (ja) 1991-03-29 1996-02-27 Masaki Kawasaki 積層板構造の象嵌模様入り製品及びその製造方法
US5391441A (en) * 1992-02-21 1995-02-21 Hitachi, Ltd. Exposure mask and method of manufacture thereof
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US6184083B1 (en) * 1997-06-30 2001-02-06 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JPH11260686A (ja) * 1998-03-11 1999-09-24 Toshiba Corp 露光方法
WO1999049366A1 (en) * 1998-03-20 1999-09-30 Nikon Corporation Photomask and projection exposure system
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) * 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000183346A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
TW497165B (en) * 1999-06-30 2002-08-01 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP2001117213A (ja) 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
JP3495983B2 (ja) * 2000-12-28 2004-02-09 キヤノン株式会社 マスク及び投影露光装置
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
CN101727021A (zh) * 2004-02-13 2010-06-09 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜

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