JP2010115832A - ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 - Google Patents

ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 Download PDF

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Publication number
JP2010115832A
JP2010115832A JP2008289806A JP2008289806A JP2010115832A JP 2010115832 A JP2010115832 A JP 2010115832A JP 2008289806 A JP2008289806 A JP 2008289806A JP 2008289806 A JP2008289806 A JP 2008289806A JP 2010115832 A JP2010115832 A JP 2010115832A
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block copolymer
self
film
pattern
forming
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JP2008289806A
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Japanese (ja)
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JP2010115832A5 (enExample
Inventor
Masataka Endo
政孝 遠藤
Masaru Sasako
勝 笹子
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Panasonic Corp
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Panasonic Corp
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Priority to JP2008289806A priority Critical patent/JP2010115832A/ja
Priority to PCT/JP2009/004217 priority patent/WO2010055601A1/ja
Publication of JP2010115832A publication Critical patent/JP2010115832A/ja
Publication of JP2010115832A5 publication Critical patent/JP2010115832A5/ja
Priority to US13/085,954 priority patent/US20110186544A1/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/02—Thermal after-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/02—Thermal after-treatment
    • B29C2071/022—Annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0037—Other properties
    • B29K2995/0093—Other properties hydrophobic

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP2008289806A 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 Pending JP2010115832A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008289806A JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
PCT/JP2009/004217 WO2010055601A1 (ja) 2008-11-12 2009-08-28 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
US13/085,954 US20110186544A1 (en) 2008-11-12 2011-04-13 Method of accelerating self-assembly of block copolymer and method of forming self-assembled pattern of block copolymer using the accelerating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008289806A JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

Related Child Applications (2)

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JP2010289550A Division JP4815011B2 (ja) 2010-12-27 2010-12-27 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
JP2010289544A Division JP4815010B2 (ja) 2010-12-27 2010-12-27 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

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JP2010115832A true JP2010115832A (ja) 2010-05-27
JP2010115832A5 JP2010115832A5 (enExample) 2011-02-17

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JP2008289806A Pending JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

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US (1) US20110186544A1 (enExample)
JP (1) JP2010115832A (enExample)
WO (1) WO2010055601A1 (enExample)

Cited By (41)

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JP2012033534A (ja) * 2010-07-28 2012-02-16 Toshiba Corp パターン形成方法及びポリマーアロイ下地材料
JP2012059802A (ja) * 2010-09-07 2012-03-22 Toshiba Corp パターン形成方法
JP2012108369A (ja) * 2010-11-18 2012-06-07 Toshiba Corp パターン形成方法
JP2013072896A (ja) * 2011-09-26 2013-04-22 Toshiba Corp パターン形成方法
US8481429B2 (en) 2011-05-12 2013-07-09 Hynix Semiconductor Inc. Method of manufacturing semiconductor device
WO2013119832A1 (en) 2012-02-10 2013-08-15 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
WO2013119811A1 (en) 2012-02-10 2013-08-15 Board Of Regents, The University Of Texas System Using chemical vapor deposited films to control domain orientation in block copolymer thin films
JP2014025054A (ja) * 2012-04-10 2014-02-06 Yuji Kiyono パターン形成方法、スチレン系ポリマー薄膜付き基材、表面撥水性材料、パスワード生成装置、培養器、パターン形成剤、及び反転パターン形成方法。
KR101361450B1 (ko) * 2011-09-30 2014-02-21 가부시끼가이샤 도시바 미세 구조체의 제조 방법
JP2014053558A (ja) * 2012-09-10 2014-03-20 Toshiba Corp パターン形成方法
JP2014078540A (ja) * 2012-10-09 2014-05-01 Toshiba Corp 自己組織化パターンの形成方法
JP2014162054A (ja) * 2013-02-22 2014-09-08 Tokyo Ohka Kogyo Co Ltd 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料
US9153456B2 (en) 2013-06-19 2015-10-06 Kabushiki Kaisha Toshiba Pattern forming method using block copolymers
US9314819B2 (en) 2012-02-10 2016-04-19 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
KR101763009B1 (ko) 2013-12-06 2017-08-03 주식회사 엘지화학 블록 공중합체
US10081698B2 (en) 2013-12-06 2018-09-25 Lg Chem, Ltd. Block copolymer
US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
US10150832B2 (en) 2013-12-06 2018-12-11 Lg Chem, Ltd. Block copolymer
US10160822B2 (en) 2013-12-06 2018-12-25 Lg Chem, Ltd. Monomer and block copolymer
US10184021B2 (en) 2013-12-06 2019-01-22 Lg Chem, Ltd. Block copolymer
US10196474B2 (en) 2013-12-06 2019-02-05 Lg Chem, Ltd. Block copolymer
US10196475B2 (en) 2013-12-06 2019-02-05 Lg Chem, Ltd. Block copolymer
US10202481B2 (en) 2013-12-06 2019-02-12 Lg Chem, Ltd. Block copolymer
US10202480B2 (en) 2013-12-06 2019-02-12 Lg Chem, Ltd. Block copolymer
US10227436B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
US10227438B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
US10227437B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
US10239980B2 (en) 2013-12-06 2019-03-26 Lg Chem, Ltd. Block copolymer
US10240035B2 (en) 2014-09-30 2019-03-26 Lg Chem, Ltd. Block copolymer
US10253130B2 (en) 2013-12-06 2019-04-09 Lg Chem, Ltd. Block copolymer
US10281820B2 (en) 2014-09-30 2019-05-07 Lg Chem, Ltd. Block copolymer
US10287430B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Method of manufacturing patterned substrate
US10287429B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Block copolymer
US10295908B2 (en) 2014-09-30 2019-05-21 Lg Chem, Ltd. Block copolymer
US10310378B2 (en) 2014-09-30 2019-06-04 Lg Chem, Ltd. Block copolymer
US10370529B2 (en) 2014-09-30 2019-08-06 Lg Chem, Ltd. Method of manufacturing patterned substrate
US10377894B2 (en) 2014-09-30 2019-08-13 Lg Chem, Ltd. Block copolymer
US10633533B2 (en) 2014-09-30 2020-04-28 Lg Chem, Ltd. Block copolymer
US10703897B2 (en) 2014-09-30 2020-07-07 Lg Chem, Ltd. Block copolymer
JP2022015930A (ja) * 2020-07-10 2022-01-21 凸版印刷株式会社 パターン膜の形成方法、パターン膜及び構造体
JP2022015953A (ja) * 2020-07-10 2022-01-21 凸版印刷株式会社 パターン膜及びその形成方法

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WO2009079241A2 (en) 2007-12-07 2009-06-25 Wisconsin Alumni Research Foundation Density multiplication and improved lithography by directed block copolymer assembly
WO2013040483A1 (en) 2011-09-15 2013-03-21 Wisconsin Alumni Research Foundation Directed assembly of block copolymer films between a chemically patterned surface and a second surface
KR101529646B1 (ko) * 2012-09-10 2015-06-17 주식회사 엘지화학 실리콘 옥사이드의 나노 패턴 형성 방법, 금속 나노 패턴의 형성 방법 및 이를 이용한 정보저장용 자기 기록 매체
WO2014139793A1 (en) * 2013-03-15 2014-09-18 Asml Netherlands B.V. Methods for providing lithography features on a substrate by self-assembly of block copolymers
TWI658055B (zh) * 2013-06-19 2019-05-01 德州大學董事會 用於薄膜嵌段共聚物之定向控制之酸酐共聚物面塗層
KR102394994B1 (ko) 2013-09-04 2022-05-04 도쿄엘렉트론가부시키가이샤 유도 자기 조립용 화학 템플릿을 생성하기 위한 경화 포토레지스트의 자외선을 이용한 박리
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
KR101835092B1 (ko) * 2014-09-30 2018-04-19 주식회사 엘지화학 블록 공중합체
CN107075055B (zh) * 2014-09-30 2019-08-27 株式会社Lg化学 嵌段共聚物
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
US10303049B2 (en) * 2017-03-22 2019-05-28 Canon Kabushiki Kaisha Reducing electric charge in imprint lithography
TWI805617B (zh) * 2017-09-15 2023-06-21 南韓商Ｌｇ化學股份有限公司 層壓板

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JP2012033534A (ja) * 2010-07-28 2012-02-16 Toshiba Corp パターン形成方法及びポリマーアロイ下地材料
JP2012059802A (ja) * 2010-09-07 2012-03-22 Toshiba Corp パターン形成方法
JP2012108369A (ja) * 2010-11-18 2012-06-07 Toshiba Corp パターン形成方法
TWI427419B (zh) * 2010-11-18 2014-02-21 Toshiba Kk 圖案形成方法
US8481429B2 (en) 2011-05-12 2013-07-09 Hynix Semiconductor Inc. Method of manufacturing semiconductor device
JP2013072896A (ja) * 2011-09-26 2013-04-22 Toshiba Corp パターン形成方法
US8673786B2 (en) 2011-09-30 2014-03-18 Kabushiki Kaisha Toshiba Method for manufacturing microstructure using self-assembly of amphiphilic polymer
KR101361450B1 (ko) * 2011-09-30 2014-02-21 가부시끼가이샤 도시바 미세 구조체의 제조 방법
US9040121B2 (en) 2012-02-10 2015-05-26 Board Of Regents The University Of Texas System Using chemical vapor deposited films to control domain orientation in block copolymer thin films
WO2013119811A1 (en) 2012-02-10 2013-08-15 Board Of Regents, The University Of Texas System Using chemical vapor deposited films to control domain orientation in block copolymer thin films
WO2013119832A1 (en) 2012-02-10 2013-08-15 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
US9157008B2 (en) 2012-02-10 2015-10-13 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
US9314819B2 (en) 2012-02-10 2016-04-19 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
JP2014025054A (ja) * 2012-04-10 2014-02-06 Yuji Kiyono パターン形成方法、スチレン系ポリマー薄膜付き基材、表面撥水性材料、パスワード生成装置、培養器、パターン形成剤、及び反転パターン形成方法。
JP2014053558A (ja) * 2012-09-10 2014-03-20 Toshiba Corp パターン形成方法
JP2014078540A (ja) * 2012-10-09 2014-05-01 Toshiba Corp 自己組織化パターンの形成方法
JP2014162054A (ja) * 2013-02-22 2014-09-08 Tokyo Ohka Kogyo Co Ltd 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料
US9153456B2 (en) 2013-06-19 2015-10-06 Kabushiki Kaisha Toshiba Pattern forming method using block copolymers
US10150832B2 (en) 2013-12-06 2018-12-11 Lg Chem, Ltd. Block copolymer
US10227437B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
KR101768288B1 (ko) 2013-12-06 2017-08-17 주식회사 엘지화학 블록 공중합체
KR101768290B1 (ko) * 2013-12-06 2017-08-18 주식회사 엘지화학 블록 공중합체
US10081698B2 (en) 2013-12-06 2018-09-25 Lg Chem, Ltd. Block copolymer
US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
KR101763009B1 (ko) 2013-12-06 2017-08-03 주식회사 엘지화학 블록 공중합체
US10160822B2 (en) 2013-12-06 2018-12-25 Lg Chem, Ltd. Monomer and block copolymer
US10184021B2 (en) 2013-12-06 2019-01-22 Lg Chem, Ltd. Block copolymer
US10196474B2 (en) 2013-12-06 2019-02-05 Lg Chem, Ltd. Block copolymer
US10196475B2 (en) 2013-12-06 2019-02-05 Lg Chem, Ltd. Block copolymer
US10202481B2 (en) 2013-12-06 2019-02-12 Lg Chem, Ltd. Block copolymer
US10202480B2 (en) 2013-12-06 2019-02-12 Lg Chem, Ltd. Block copolymer
US10227436B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
US10227438B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
KR101763010B1 (ko) 2013-12-06 2017-08-03 주식회사 엘지화학 블록 공중합체
US10239980B2 (en) 2013-12-06 2019-03-26 Lg Chem, Ltd. Block copolymer
US10253130B2 (en) 2013-12-06 2019-04-09 Lg Chem, Ltd. Block copolymer
US10370529B2 (en) 2014-09-30 2019-08-06 Lg Chem, Ltd. Method of manufacturing patterned substrate
US10377894B2 (en) 2014-09-30 2019-08-13 Lg Chem, Ltd. Block copolymer
US10287430B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Method of manufacturing patterned substrate
US10287429B2 (en) 2014-09-30 2019-05-14 Lg Chem, Ltd. Block copolymer
US10295908B2 (en) 2014-09-30 2019-05-21 Lg Chem, Ltd. Block copolymer
US10310378B2 (en) 2014-09-30 2019-06-04 Lg Chem, Ltd. Block copolymer
US10633533B2 (en) 2014-09-30 2020-04-28 Lg Chem, Ltd. Block copolymer
US10240035B2 (en) 2014-09-30 2019-03-26 Lg Chem, Ltd. Block copolymer
US10281820B2 (en) 2014-09-30 2019-05-07 Lg Chem, Ltd. Block copolymer
US10703897B2 (en) 2014-09-30 2020-07-07 Lg Chem, Ltd. Block copolymer
JP7528580B2 (ja) 2020-07-10 2024-08-06 Ｔｏｐｐａｎホールディングス株式会社 パターン膜及びその形成方法
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JP7552110B2 (ja) 2020-07-10 2024-09-18 Ｔｏｐｐａｎホールディングス株式会社 パターン膜の形成方法及びパターン膜

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