JP2010098590A5 - - Google Patents

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Publication number
JP2010098590A5
JP2010098590A5 JP2008268714A JP2008268714A JP2010098590A5 JP 2010098590 A5 JP2010098590 A5 JP 2010098590A5 JP 2008268714 A JP2008268714 A JP 2008268714A JP 2008268714 A JP2008268714 A JP 2008268714A JP 2010098590 A5 JP2010098590 A5 JP 2010098590A5
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JP
Japan
Prior art keywords
gate
drain
pmos transistor
source
nmos transistor
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JP2008268714A
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English (en)
Japanese (ja)
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JP5372464B2 (ja
JP2010098590A (ja
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Priority to JP2008268714A priority Critical patent/JP5372464B2/ja
Priority claimed from JP2008268714A external-priority patent/JP5372464B2/ja
Publication of JP2010098590A publication Critical patent/JP2010098590A/ja
Publication of JP2010098590A5 publication Critical patent/JP2010098590A5/ja
Application granted granted Critical
Publication of JP5372464B2 publication Critical patent/JP5372464B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008268714A 2008-10-17 2008-10-17 差動出力バッファ Expired - Fee Related JP5372464B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008268714A JP5372464B2 (ja) 2008-10-17 2008-10-17 差動出力バッファ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008268714A JP5372464B2 (ja) 2008-10-17 2008-10-17 差動出力バッファ

Publications (3)

Publication Number Publication Date
JP2010098590A JP2010098590A (ja) 2010-04-30
JP2010098590A5 true JP2010098590A5 (enExample) 2011-10-20
JP5372464B2 JP5372464B2 (ja) 2013-12-18

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ID=42259953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008268714A Expired - Fee Related JP5372464B2 (ja) 2008-10-17 2008-10-17 差動出力バッファ

Country Status (1)

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JP (1) JP5372464B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9071243B2 (en) * 2011-06-30 2015-06-30 Silicon Image, Inc. Single ended configurable multi-mode driver
JP5771489B2 (ja) * 2011-09-15 2015-09-02 ルネサスエレクトロニクス株式会社 半導体装置
JP6140573B2 (ja) * 2012-09-03 2017-05-31 株式会社メガチップス 出力バッファ回路
JP6094747B2 (ja) * 2013-03-26 2017-03-15 セイコーエプソン株式会社 出力回路、半導体集積回路、振動デバイス、電子機器、および移動体
JP6399938B2 (ja) 2015-01-22 2018-10-03 株式会社メガチップス 差動出力バッファ
JP7031369B2 (ja) * 2018-02-28 2022-03-08 セイコーエプソン株式会社 出力回路、発振器及び電子機器
CN109842416B (zh) * 2018-12-31 2024-02-23 芯动微电子科技(珠海)有限公司 发送装置
CN111756366B (zh) * 2020-06-22 2024-03-08 复旦大学 应用于高速adc前端的cmos输入信号缓冲器

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08265127A (ja) * 1995-03-28 1996-10-11 Mitsubishi Electric Corp ゲート回路,及びディジタル集積回路
JP3644010B2 (ja) * 1999-03-29 2005-04-27 富士通株式会社 光送信回路
JP2002151599A (ja) * 2000-11-13 2002-05-24 Hitachi Ltd 半導体集積回路装置およびその製造方法
JP2002368600A (ja) * 2001-06-08 2002-12-20 Mitsubishi Electric Corp プリエンファシス回路
JP2005123212A (ja) * 2003-09-11 2005-05-12 Ricoh Co Ltd 内部電源電位供給回路
JP4578316B2 (ja) * 2005-05-02 2010-11-10 ザインエレクトロニクス株式会社 送信装置
JP4811192B2 (ja) * 2006-08-24 2011-11-09 ソニー株式会社 駆動回路
JP2008182418A (ja) * 2007-01-24 2008-08-07 Sharp Corp 半導体集積回路

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